¼¼°èÀÇ ÅºÈ­±Ô¼Ò(SiC) ¿þÀÌÆÛ ¿¬¸¶ ½ÃÀå
Silicon Carbide (SiC) Wafer Polishing
»óǰÄÚµå : 1796013
¸®¼­Ä¡»ç : Global Industry Analysts, Inc.
¹ßÇàÀÏ : 2025³â 08¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 377 Pages
 ¶óÀ̼±½º & °¡°Ý (ºÎ°¡¼¼ º°µµ)
US $ 5,850 £Ü 8,233,000
PDF & Excel (Single User License) help
PDF & Excel º¸°í¼­¸¦ 1¸í¸¸ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. ÆÄÀÏ ³» ÅØ½ºÆ®ÀÇ º¹»ç ¹× ºÙ¿©³Ö±â´Â °¡´ÉÇÏÁö¸¸, Ç¥/±×·¡ÇÁ µîÀº º¹»çÇÒ ¼ö ¾ø½À´Ï´Ù. Àμâ´Â 1ȸ °¡´ÉÇϸç, Àμ⹰ÀÇ ÀÌ¿ë¹üÀ§´Â ÆÄÀÏ ÀÌ¿ë¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 17,550 £Ü 24,701,000
PDF & Excel (Global License to Company and its Fully-owned Subsidiaries) help
PDF & Excel º¸°í¼­¸¦ µ¿ÀÏ ±â¾÷ ¹× 100% ÀÚȸ»çÀÇ ¸ðµç ºÐÀÌ ÀÌ¿ëÇÏ½Ç ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â 1Àδç 1ȸ °¡´ÉÇϸç, Àμ⹰ÀÇ ÀÌ¿ë¹üÀ§´Â ÆÄÀÏ ÀÌ¿ë¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.


Çѱ۸ñÂ÷

źȭ±Ô¼Ò(SiC) ¿þÀÌÆÛ ¿¬¸¶ ¼¼°è ½ÃÀåÀº 2030³â±îÁö 35¾ï ´Þ·¯¿¡ ´ÞÇÒ Àü¸Á

2024³â¿¡ 5¾ï 9,730¸¸ ´Þ·¯·Î ÃßÁ¤µÇ´Â źȭ±Ô¼Ò(SiC) ¿þÀÌÆÛ ¿¬¸¶ ¼¼°è ½ÃÀåÀº ºÐ¼® ±â°£ÀÎ 2024-2030³â¿¡ CAGR 34.3%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 35¾ï ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ÀÌ º¸°í¼­¿¡¼­ ºÐ¼®ÇÑ ºÎ¹® Áß ÇϳªÀÎ ¸ÞÄ¿´ÏÄà ÇÁ·Î¼¼½º´Â CAGR 31.8%¸¦ ±â·ÏÇÏ¸ç ºÐ¼® ±â°£ Á¾·á½Ã¿¡´Â 13¾ï ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÄɹÌÄà ¹× ¸ÞÄ¿´ÏÄà ÇÁ·Î¼¼½º ºÐ¾ßÀÇ ¼ºÀå·üÀº ºÐ¼® ±â°£ µ¿¾È CAGR 39.7%·Î ÃßÁ¤µË´Ï´Ù.

¹Ì±¹ ½ÃÀåÀº 1¾ï 6,270¸¸ ´Þ·¯·Î ÃßÁ¤¡¤Áß±¹Àº CAGR 44.0%·Î ¼ºÀå ¿¹Ãø

¹Ì±¹ÀÇ ÅºÈ­±Ô¼Ò(SiC) ¿þÀÌÆÛ ¿¬¸¶ ½ÃÀåÀº 2024³â¿¡ 1¾ï 6,270¸¸ ´Þ·¯·Î ÃßÁ¤µË´Ï´Ù. ¼¼°è 2À§ °æÁ¦ ´ë±¹ÀÎ Áß±¹Àº 2030³â±îÁö 8¾ï 9,490¸¸ ´Þ·¯ÀÇ ½ÃÀå ±Ô¸ð¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, ºÐ¼® ±â°£ÀÎ 2024-2030³â CAGRÀº 44.0%¸¦ ±â·ÏÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ±âŸ ÁÖ¸ñÇÒ ¸¸ÇÑ Áö¿ªº° ½ÃÀåÀ¸·Î´Â ÀϺ»°ú ij³ª´Ù°¡ ÀÖ°í, ºÐ¼® ±â°£ µ¿¾È CAGRÀº °¢°¢ 28.1%¿Í 30.8%·Î ¿¹ÃøµË´Ï´Ù. À¯·´¿¡¼­´Â µ¶ÀÏÀÌ CAGR 29.0%·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

¼¼°èÀÇ ÅºÈ­±Ô¼Ò(SiC) ¿þÀÌÆÛ ¿¬¸¶ ½ÃÀå - ÁÖ¿ä µ¿Çâ°ú ÃËÁø¿äÀÎ Á¤¸®

SiC ¿þÀÌÆÛ ¿¬¸¶°¡ ÷´Ü Àü·Â ¹ÝµµÃ¼ ¼ÒÀÚ Á¦Á¶¿¡¼­ Áß¿äÇÑ ÀÌÀ¯´Â ¹«¾ùÀΰ¡?

źȭ±Ô¼Ò(SiC) ¿þÀÌÆÛ ¿¬¸¶´Â °í¼º´É Àü·Â ¹ÝµµÃ¼ ¼ÒÀÚ Á¦Á¶¿¡ ÇʼöÀûÀÎ °øÁ¤À¸·Î, Á¦Á¶¾÷ü´Â ÷´Ü ¾ÖÇø®ÄÉÀ̼ǿ¡ ÇÊ¿äÇÑ Æòźµµ, ÆòȰµµ, °áÇÔ ¾ø´Â Ç¥¸éÀ» ±¸ÇöÇÒ ¼ö ÀÖ½À´Ï´Ù. SiC´Â ¿ì¼öÇÑ ¿­ÀüµµÀ², ³ôÀº ³»¾Ð, ¿ì¼öÇÑ È­ÇÐÀû ¾ÈÁ¤¼ºÀ» °¡Áø ¿ÍÀÌµå ¹êµå °¸ Àç·á·Î Â÷¼¼´ë ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º¿¡ ÀÌ»óÀûÀÔ´Ï´Ù. ±×·¯³ª ±× ¶Ù¾î³­ °æµµ´Â ƯÈ÷ ¿þÀÌÆÛÀÇ ¹ÚÆíÈ­ ¹× Ç¥¸é°¡°ø¿¡ ÀÖ¾î °¡Àå °¡°øÇϱ⠾î·Á¿î ¼ÒÀç Áß ÇϳªÀ̱⵵ ÇÕ´Ï´Ù. ¿¬¸¶´Â ¿þÀÌÆÛ ½½¶óÀ̰̽ú ±×¶óÀεù¿¡ À̾î Áß¿äÇÑ ´Ü°è·Î¼­, Ç¥¸é ¾Æ·¡ÀÇ ¼Õ»óÀ» Á¦°ÅÇÏ¿© µð¹ÙÀ̽º Á¦Á¶¿¡ ÇÊ¿äÇÑ ÃÊÆòȰ Ç¥¸éÀ» ±¸ÇöÇÏ´Â Áß¿äÇÑ ´Ü°èÀÔ´Ï´Ù. °íǰÁú ¿¬¸¶´Â ´õ ³ªÀº ¿¡ÇÇÅÃ¼È ¼ºÀåÀ» º¸ÀåÇϰí, °áÇÔÀ» ÁÙÀ̸ç, ÀåÄ¡ÀÇ ¼öÀ²°ú ½Å·Ú¼ºÀ» Çâ»ó½Ãŵ´Ï´Ù. Àü±âÀÚµ¿Â÷, ž籤 ÀιöÅÍ, °íÁÖÆÄ Àü¿ø, 5G ±âÁö±¹ µî ¹ÝµµÃ¼ÀÇ ¼º´É°ú È¿À²ÀÌ °¡Àå Áß¿äÇÑ ¾ÖÇø®ÄÉÀ̼ǿ¡¼­ ¿¬¸¶µÈ SiC ¿þÀÌÆÛ´Â ±âÃÊÀûÀÎ ¿ªÇÒÀ» ÇÕ´Ï´Ù. Á¦Á¶¾÷ü´Â 4H ¹× 6H Æú¸® ŸÀÔ SiC ¿þÀÌÆÛÀÇ ¾ö°ÝÇÑ Ç¥¸é ǰÁú ¿ä±¸ »çÇ×À» ÃæÁ·½Ã۱â À§ÇØ Á¤¹Ð ¿¬¸¶ °øÁ¤¿¡ ¸¹Àº ÅõÀÚ¸¦ Çϰí ÀÖ½À´Ï´Ù. SiC ±â¹Ý µð¹ÙÀ̽º°¡ Àü±âÈ­ ¹× ¿¡³ÊÁö È¿À²È­¸¦ ÃßÁøÇϸ鼭 ÁÖ·ù°¡ µÇ¸é¼­ ¿þÀÌÆÛ ¿¬¸¶´Â ´õ ÀÌ»ó ºÎÂ÷ÀûÀÎ °øÁ¤ÀÌ ¾Æ´Ï¶ó ±â´É°ú »ó¾÷Àû ¼º°øÀ» °¡´ÉÇÏ°Ô ÇÏ´Â ÇÙ½É ¿ä¼Ò·Î ÀÚ¸® Àâ¾Ò½À´Ï´Ù.

±â¼úÀÇ ¹ßÀüÀº SiC ¿þÀÌÆÛ ¿¬¸¶ÀÇ Á¤È®¼º°ú È¿À²¼ºÀ» ¾î¶»°Ô Çâ»ó½Ã۰í Àִ°¡?

ÃÖ±Ù ±â¼ú Çõ½ÅÀº º¸´Ù Á¤¹ÐÇϰí Á¦¾î °¡´ÉÇϸç È®Àå °¡´ÉÇÑ ±â¼úÀ» µµÀÔÇÏ¿© SiC ¿þÀÌÆÛ ¿¬¸¶ÀÇ ´É·Â°ú È¿°ú¸¦ Å©°Ô Çâ»ó½ÃÄ×½À´Ï´Ù. ±âÁ¸ÀÇ ±â°èÀû ¿¬¸¶ ¹æ¹ýÀº Àç·á ¼Õ½Ç°ú Ç¥¸é ¾Æ·¡ ¼Õ»óÀ» ÃÖ¼ÒÈ­Çϸ鼭 SiCÀÇ °æµµ¸¦ È¿°úÀûÀ¸·Î °ü¸®ÇÒ ¼ö ÀÖ´Â °í±Þ ½½·¯¸® È­ÇÐÁ¦Ç°, ¿¬¸¶Àç ¹× ÆÐµå Àç·á·Î °³¼±µÇ¾ú½À´Ï´Ù. È­ÇÐÀû ±â°èÀû ¿¬¸¶(CMP)´Â ±â°èÀû ¿¬¸¶¿Í È­ÇÐÀû ¹ÝÀÀÀ» °áÇÕÇÏ¿© ³ôÀº Àç·á Á¦°ÅÀ²°ú ³·Àº °áÇÔ·ü·Î ¿øÀÚ ¼öÁØ¿¡¼­ ÆòźÇÑ Ç¥¸éÀ» ±¸ÇöÇϴ ǥÁØÀ¸·Î ÀÚ¸® Àâ¾Ò½À´Ï´Ù. ³ª³ë Å©±âÀÇ ¿¬¸¶Àç »ç¿ë ¹× ¸ÂÃãÇü pH ¹èÇÕ°ú °°Àº CMP ½½·¯¸®ÀÇ Çõ½ÅÀº ½ºÅ©·¡Ä¡¸¦ ÁÙÀ̰í, 6ÀÎÄ¡ ¹× 8ÀÎÄ¡ SiC ¿þÀÌÆÛ·ÎÀÇ ÀüȯÀ» Æ÷ÇÔÇÏ¿© ´õ Å« ¿þÀÌÆÛ Á÷°æ¿¡ °ÉÃÄ ±ÕÀÏÇÑ ¿¬¸¶¸¦ °¡´ÉÇÏ°Ô ÇÕ´Ï´Ù. ½Ç½Ã°£ ¸ð´ÏÅ͸µ ½Ã½ºÅÛÀ» °®Ãá ÃÊÁ¤¹Ð ¿¬¸¶ µµ±¸´Â ¾Ð·Â, ¼Óµµ, ¿Âµµ¸¦ ÃÖÀûÈ­ÇÏ¿© ¾ÈÁ¤ÀûÀΠǥ¸é ǰÁúÀ» ´Þ¼ºÇϱâ À§ÇØ µµÀԵǾú½À´Ï´Ù. ÀÚµ¿È­¿Í ÀΰøÁö´ÉÀÇ ÅëÇÕÀº °øÁ¤ÀÇ ÀçÇö¼ºÀ» ´õ¿í Çâ»ó½Ã۰í, Á¦Á¶¾÷ü´Â ǰÁú ÀúÇÏ ¾øÀÌ »çÀÌŬ ½Ã°£À» ´ÜÃàÇϰí 󸮷®À» ´Ã¸± ¼ö ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ȯ°æ ¹®Á¦¿Í ¹° »ç¿ë·®À» ÇØ°áÇϱâ À§ÇØ °Ç½Ä ¿¬¸¶ ±â¼úÀ̳ª ÇÏÀ̺긮µå ¹æ½Äµµ µîÀåÇϰí ÀÖ½À´Ï´Ù. ÀÚµ¿Â÷, Ç×°ø¿ìÁÖ ¹× »ê¾÷ ºÐ¾ß¿¡¼­ SiCÀÇ Ã¤ÅÃÀÌ °¡¼ÓÈ­µÊ¿¡ µû¶ó ¿þÀÌÆÛ ¿¬¸¶ÀÇ ÀÌ·¯ÇÑ ±â¼úÀû Áøº¸´Â ¼º´É º¥Ä¡¸¶Å©¿Í ´ë·® »ý»ê ¸ñÇ¥¸¦ ¸ðµÎ ´Þ¼ºÇÏ´Â µ¥ ÇʼöÀûÀÎ ¿ä¼ÒÀÔ´Ï´Ù.

°íÁ¤¹Ð SiC ¿þÀÌÆÛ ¿¬¸¶¿¡ ´ëÇÑ ¼ö¿ä¸¦ ÁÖµµÇÏ´Â »ê¾÷ ¹× ÀÀ¿ë ºÐ¾ß´Â ¹«¾ùÀΰ¡?

°íǰÁú SiC ¿þÀÌÆÛ ¿¬¸¶¿¡ ´ëÇÑ ¼ö¿ä´Â °íÀü¾Ð, °í¿Â, ³ôÀº ½ºÀ§Äª Á֯ļö Á¶°Ç¿¡¼­ ÀÛµ¿ÇÒ ¼ö ÀÖ´Â Àü·Â ÀåÄ¡¿¡ ÀÇÁ¸ÇÏ´Â »ê¾÷ÀÌ Áõ°¡ÇÔ¿¡ µû¶ó ÁÖµµµÇ°í ÀÖ½À´Ï´Ù. Àü±âÀÚµ¿Â÷ »ê¾÷Àº °¡Àå µÎµå·¯Áø ÃËÁø¿äÀÎ Áß ÇϳªÀ̸ç, SiC ±â¹Ý ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º´Â Æ®·¢¼Ç ÀιöÅÍ, Â÷·®¿ë ÃæÀü±â, DC-DC ÄÁ¹öÅÍ¿¡ »ç¿ëµÇ¾î Àü·Â ¹Ðµµ¸¦ Çâ»ó½Ã۰í ÁÖÇà °Å¸®¸¦ ¿¬ÀåÇÏ´Â µ¥ »ç¿ëµË´Ï´Ù. žçÀüÁö ¹× dz·Â ÀιöÅÍ¿Í °°Àº Àç»ý¿¡³ÊÁö ½Ã½ºÅÛ¿¡¼­ ¿¬¸¶µÈ SiC ¿þÀÌÆÛ´Â ¿¡³ÊÁö ¼Õ½ÇÀ» ÃÖ¼ÒÈ­ÇÏ°í º¯È¯ È¿À²À» ÃÖ´ëÈ­Çϱâ À§ÇØ ÇʼöÀûÀÔ´Ï´Ù. Ç×°ø¿ìÁÖ ¹× ¹æÀ§ ºÐ¾ß¿¡¼­µµ SiC µð¹ÙÀ̽º´Â ½Å·Ú¼º°ú ¿­ ¼º´ÉÀ¸·Î ÀÎÇØ ·¹ÀÌ´õ ½Ã½ºÅÛ ¹× °í°íµµ ¾ÖÇø®ÄÉÀ̼ǿ¡ Ȱ¿ëµÇ°í ÀÖ½À´Ï´Ù. Åë½Å ÀÎÇÁ¶ó, ƯÈ÷ 5G ³×Æ®¿öÅ©´Â ¹«¼± Á֯ļö Àåºñ ¹× Àü·Â ÁõÆø±âÀÇ Àü·Â °ü¸®¿¡ SiC ±â¼úÀ» Ȱ¿ëÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ, µ¥ÀÌÅͼ¾ÅÍ¿Í °í¼º´É ÄÄÇ»ÆÃ ½Ã¼³Àº ¿¡³ÊÁö È¿À²À» ³ôÀÌ°í ¹ß¿­À» ÁÙÀ̱â À§ÇØ SiC ºÎǰÀ» äÅÃÇϱ⠽ÃÀÛÇß½À´Ï´Ù. öµµ ¿î¼Û, ½º¸¶Æ® Á¦Á¶, Àü·Â¸Á ÀÎÇÁ¶ó µîÀÇ ºÐ¾ß¿¡¼­ »ê¾÷ ÀÚµ¿È­ ¹× Àü±âÈ­°¡ ±¤¹üÀ§ÇÏ°Ô ÃßÁøµÇ¸é¼­ ½Å·Ú¼ºÀÌ ³ô°í °áÇÔÀÌ ÀûÀº SiC ¿þÀÌÆÛ¿¡ ´ëÇÑ ¼ö¿ä°¡ ´õ¿í Áõ°¡Çϰí ÀÖ½À´Ï´Ù. °¢ »ê¾÷ ºÐ¾ß¿¡¼­´Â µð¹ÙÀ̽º ¼öÀ², ¼º´ÉÀÇ Àϰü¼º, ½Å·Ú¼ºÀÌ Áß¿äÇϱ⠶§¹®¿¡ SiC ±â¹Ý ¼Ö·ç¼ÇÀ» Àü ¼¼°è·Î È®ÀåÇϱâ À§Çؼ­´Â °íÁ¤¹Ð ¿þÀÌÆÛ ¿¬¸¶°¡ ±âº» ¿ä°ÇÀÔ´Ï´Ù.

SiC ¿þÀÌÆÛ ¿¬¸¶ÀÇ ¼ºÀåÀ» µÞ¹ÞħÇÏ´Â ½ÃÀå ¼¼·Â°ú ¼¼°è µ¿ÇâÀº?

SiC ¿þÀÌÆÛ ¿¬¸¶ ½ÃÀåÀº ¿¡³ÊÁö È¿À², ¼ÒÇüÈ­, Áö¼Ó°¡´É¼ºÀ» Áß½ÃÇÏ´Â °Å½Ã°æÁ¦, ±ÔÁ¦, ±â¼ú µ¿ÇâÀÇ Á¶ÇÕ¿¡ ÈûÀÔ¾î ºü¸£°Ô ¼ºÀåÇϰí ÀÖ½À´Ï´Ù. Àü±â ¸ðºô¸®Æ¼¿Í Àç»ý¿¡³ÊÁö·ÎÀÇ ÀüȯÀº SiC ÆÄ¿ö µð¹ÙÀ̽º¿¡ ´ëÇÑ ¼ö¿ä¸¦ âÃâÇϰí ÀÖÀ¸¸ç, ÀÌ´Â °íǰÁú ¿þÀÌÆÛ ±âÆÇ°ú Á¤¹Ð ¿¬¸¶ ¼­ºñ½º¿¡ ´ëÇÑ Çʿ伺À» ºÒ·¯ÀÏÀ¸Å°°í ÀÖ½À´Ï´Ù. ÀÌ»êȭź¼Ò ¹èÃâ·®À» ÁÙÀÌ°í ¿¡³ÊÁö ÀÚ¸³À» ´Þ¼ºÇϱâ À§ÇÑ Á¤Ã¥ ÀÌ´Ï¼ÅÆ¼ºê´Â Á¦Á¶¾÷üµéÀÌ ¿î¼Û, ¿¡³ÊÁö, »ê¾÷ ºÐ¾ß¿¡¼­ SiC ±â¼ú¿¡ ÅõÀÚÇÒ ¼ö ÀÖ´Â µ¿±â¸¦ ºÎ¿©Çϰí ÀÖ½À´Ï´Ù. µ¿½Ã¿¡ °áÁ¤ ¼ºÀå ±â¼úÀÇ ¹ßÀü°ú SiC ¿þÀÌÆÛÀÇ Á÷°æÀÌ Ä¿Áü¿¡ µû¶ó ¿¬¸¶ ¾÷ü´Â Çõ½Å°ú ÀûÀÀÀ» À§ÇÑ »õ·Î¿î µµÀü°ú ±âȸ¸¦ âÃâÇϰí ÀÖ½À´Ï´Ù. ¼öÁ÷ ÅëÇÕ ¹ÝµµÃ¼ Á¦Á¶¾÷üÀÇ ºÎ»óµµ ½ÃÀå¿¡ ¿µÇâÀ» ¹ÌÄ¡°í ÀÖÀ¸¸ç, ±â¾÷µéÀº ¿¬¸¶¸¦ Æ÷ÇÔÇÑ ÀåÄ¡ Á¦Á¶ÀÇ ¸ðµç ´Ü°è¸¦ °ü¸®ÇÏ¿© ǰÁú Çâ»ó°ú ºñ¿ë Àý°¨À» À§ÇØ ³ë·ÂÇϰí ÀÖ½À´Ï´Ù. ¼¼°è °ø±Þ¸ÁÀÇ È¥¶õÀº ±¹³» Á¦Á¶ ¹× °í¼öÀ² °øÁ¤ÀÇ Á߿伺À» °­Á¶ÇÏ°í ¿¬¸¶ ±â¼ú¿¡ ´ëÇÑ ÅõÀÚ¸¦ ´õ¿í Áõ°¡½Ã۰í ÀÖ½À´Ï´Ù. ¶ÇÇÑ, Áö¼Ó°¡´É¼º¿¡ ´ëÇÑ °ü½ÉÀ¸·Î ģȯ°æ ½½·¯¸® ¹èÇÕ, ÀçȰ¿ë ½Ã½ºÅÛ, ¹° Àý¾àÇü °øÁ¤ ¼³°è °³¹ßµµ ÁøÇà ÁßÀÔ´Ï´Ù. ÀÌ·¯ÇÑ ÁøÈ­ÇÏ´Â ¿ªÇÐÀ¸·Î ÀÎÇØ SiC ¿þÀÌÆÛ ¿¬¸¶´Â ´õ ³ÐÀº ¹ÝµµÃ¼ »ýŰ迡¼­ Àü·«ÀûÀÌ°í ºü¸£°Ô ¼ºÀåÇÏ´Â ºÐ¾ß·Î ÀÚ¸®¸Å±èÇϰí ÀÖÀ¸¸ç, ¿¡³ÊÁö¿¡ ´ëÇÑ ÀνÄÀÌ ³ôÀº ¼¼°è¿¡¼­ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½ºÀÇ ¹ßÀü¿¡ ÇʼöÀûÀÎ ¿ä¼Ò·Î ÀÚ¸®¸Å±èÇϰí ÀÖ½À´Ï´Ù.

ºÎ¹®

ÇÁ·Î¼¼½º À¯Çü(¸ÞÄ¿´ÏÄà ÇÁ·Î¼¼½º, ÄɹÌÄà ¹× ¸ÞÄ¿´ÏÄà ÇÁ·Î¼¼½º, ÀüÇØ ¿¬¸¶ ÇÁ·Î¼¼½º, ÄɹÌÄà ÇÁ·Î¼¼½º, ÇöóÁ ¾î½Ã½ºÆ® ÇÁ·Î¼¼½º), Á¦Ç° À¯Çü(¿¬¸¶ ÆÄ¿ì´õ, ¿¬¸¶ ÆÐµå, ´ÙÀ̾Ƹóµå ½½·¯¸®, ÄÝ·ÎÀÌ´Þ ½Ç¸®Ä« Çöʾ×), ¿ëµµ(ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º ¿ëµµ, LED ¿ëµµ, ¼¾¼­ ¹× °ËÃâ±â ¿ëµµ, RF ¹× ¸¶ÀÌÅ©·ÎÆÄ µð¹ÙÀ̽º ¿ëµµ)

Á¶»ç ´ë»ó ±â¾÷ »ç·Ê

AI ÅëÇÕ

Global Industry Analysts´Â °ËÁõµÈ Àü¹®°¡ ÄÁÅÙÃ÷¿Í AI ÅøÀ» ÅëÇØ ½ÃÀå°ú °æÀï Á¤º¸¸¦ Çõ½ÅÇϰí ÀÖ½À´Ï´Ù.

Global Industry Analysts´Â LLM ¹× ¾÷°è °íÀ¯ÀÇ SLMÀ» Á¶È¸ÇÏ´Â ÀϹÝÀûÀÎ ±Ô¹üÀ» µû¸£´Â ´ë½Å ºñµð¿À ±â·Ï, ºí·Î±×, °Ë»ö ¿£Áø Á¶»ç, ¹æ´ëÇÑ ¾çÀÇ ±â¾÷, Á¦Ç°/¼­ºñ½º, ½ÃÀå µ¥ÀÌÅÍ µî ¼¼°è Àü¹®°¡·ÎºÎÅÍ ¼öÁýÇÑ ÄÁÅÙÃ÷ ¸®Æ÷ÁöÅ丮¸¦ ±¸ÃàÇß½À´Ï´Ù.

°ü¼¼ ¿µÇâ °è¼ö

Global Industry Analysts´Â º»»ç ¼ÒÀçÁö, Á¦Á¶°ÅÁ¡, ¼öÃâÀÔ(¿ÏÁ¦Ç° ¹× OEM)À» ±âÁØÀ¸·Î ±â¾÷ÀÇ °æÀï·Â º¯È­¸¦ ¿¹ÃøÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ º¹ÀâÇÏ°í ´Ù¸éÀûÀÎ ½ÃÀå ¿ªÇÐÀº ¸ÅÃâ¿ø°¡(COGS) Áõ°¡, ¼öÀͼº Ç϶ô, °ø±Þ¸Á ÀçÆí µî ¹Ì½ÃÀû, °Å½ÃÀû ½ÃÀå ¿ªÇÐ Áß¿¡¼­µµ ƯÈ÷ °æÀï»çµé¿¡°Ô ¿µÇâÀ» ¹ÌÄ¥ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

¸ñÂ÷

Á¦1Àå Á¶»ç ¹æ¹ý

Á¦2Àå ÁÖ¿ä ¿ä¾à

Á¦3Àå ½ÃÀå ºÐ¼®

Á¦4Àå °æÀï

KSM
¿µ¹® ¸ñÂ÷

¿µ¹®¸ñÂ÷

Global Silicon Carbide (SiC) Wafer Polishing Market to Reach US$3.5 Billion by 2030

The global market for Silicon Carbide (SiC) Wafer Polishing estimated at US$597.3 Million in the year 2024, is expected to reach US$3.5 Billion by 2030, growing at a CAGR of 34.3% over the analysis period 2024-2030. Mechanical Process, one of the segments analyzed in the report, is expected to record a 31.8% CAGR and reach US$1.3 Billion by the end of the analysis period. Growth in the Chemical & Mechanical Process segment is estimated at 39.7% CAGR over the analysis period.

The U.S. Market is Estimated at US$162.7 Million While China is Forecast to Grow at 44.0% CAGR

The Silicon Carbide (SiC) Wafer Polishing market in the U.S. is estimated at US$162.7 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$894.9 Million by the year 2030 trailing a CAGR of 44.0% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 28.1% and 30.8% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 29.0% CAGR.

Global Silicon Carbide (SiC) Wafer Polishing Market - Key Trends & Drivers Summarized

Why Is SiC Wafer Polishing Crucial in the Fabrication of Advanced Power Semiconductor Devices?

Silicon carbide (SiC) wafer polishing has become an essential process in the fabrication of high-performance power semiconductor devices, enabling manufacturers to achieve the flatness, smoothness, and defect-free surfaces required for advanced applications. SiC is a wide-bandgap material with superior thermal conductivity, high breakdown voltage, and excellent chemical stability, making it ideal for next-generation power electronics. However, its exceptional hardness also makes it one of the most challenging materials to process, particularly in wafer thinning and surface finishing. Polishing is a critical step following wafer slicing and grinding, as it removes subsurface damage and achieves the ultra-smooth surfaces necessary for device fabrication. High-quality polishing ensures better epitaxial growth, reduces defects, and improves device yield and reliability. In applications such as electric vehicles, solar inverters, high-frequency power supplies, and 5G base stations, where the performance and efficiency of semiconductors are paramount, polished SiC wafers play a foundational role. Manufacturers are investing heavily in precision polishing processes to meet the stringent surface quality demands of both 4H and 6H polytypes of SiC wafers. As SiC-based devices become more mainstream in the push toward electrification and energy efficiency, wafer polishing is no longer a secondary process but a key enabler of functional and commercial success.

How Are Technological Advances Improving the Precision and Efficiency of SiC Wafer Polishing?

Recent technological innovations are significantly enhancing the capabilities and effectiveness of SiC wafer polishing by introducing more precise, controlled, and scalable techniques. Traditional mechanical polishing methods have been refined with advanced slurry chemistries, abrasives, and pad materials that can effectively manage SiC’s hardness while minimizing material loss and sub-surface damage. Chemical mechanical polishing (CMP) has become the gold standard, combining both mechanical abrasion and chemical reaction to achieve atomically flat surfaces with high material removal rates and low defectivity. Innovations in CMP slurries, such as the use of nano-sized abrasives and customized pH formulations, are reducing scratching and enabling uniform polishing across larger wafer diameters, including the industry’s shift toward 6-inch and 8-inch SiC wafers. Ultra-precision polishing tools equipped with real-time monitoring systems are being deployed to optimize pressure, speed, and temperature for consistent surface quality. The integration of automation and artificial intelligence is further improving process repeatability, enabling manufacturers to reduce cycle times and boost throughput without sacrificing quality. Dry polishing techniques and hybrid methods are also emerging to address environmental concerns and water usage. As SiC adoption accelerates across automotive, aerospace, and industrial sectors, these technological advances in wafer polishing are proving critical to meeting both performance benchmarks and volume production targets.

Which Industries and Applications Are Driving Demand for High-Precision SiC Wafer Polishing?

The demand for high-quality SiC wafer polishing is being driven by a growing list of industries that rely on power devices capable of operating under high voltage, high temperature, and high switching frequency conditions. The electric vehicle industry is one of the most prominent drivers, as SiC-based power electronics are being used in traction inverters, onboard chargers, and DC-DC converters to improve power density and extend driving range. In renewable energy systems such as solar and wind inverters, polished SiC wafers are vital for minimizing energy loss and maximizing conversion efficiency. Aerospace and defense sectors also utilize SiC devices in radar systems and high-altitude applications due to their reliability and thermal performance. Telecommunications infrastructure, particularly 5G networks, relies on SiC technology to manage power in radio frequency equipment and power amplifiers. Additionally, data centers and high-performance computing facilities are beginning to adopt SiC components to enhance energy efficiency and reduce heat generation. The broader push for industrial automation and electrification in sectors like rail transport, smart manufacturing, and grid infrastructure is further amplifying demand for reliable, low-defect SiC wafers. Each of these industries places a premium on device yield, performance consistency, and reliability, making high-precision wafer polishing a foundational requirement for scaling SiC-based solutions globally.

What Market Forces and Global Trends Are Supporting Growth in SiC Wafer Polishing?

The SiC wafer polishing market is expanding rapidly, supported by a combination of macroeconomic, regulatory, and technological trends that emphasize energy efficiency, miniaturization, and sustainability. The global shift toward electric mobility and renewable power generation is generating robust demand for SiC power devices, which in turn fuels the need for high-quality wafer substrates and precise polishing services. Policy initiatives aimed at reducing carbon emissions and achieving energy independence are incentivizing manufacturers to invest in SiC technology across transportation, energy, and industrial domains. At the same time, advances in crystal growth technologies and the scaling of SiC wafer production to larger diameters are creating new challenges and opportunities for polishing providers to innovate and adapt. The rise of vertically integrated semiconductor manufacturers is also impacting the market, as companies look to control every stage of device fabrication, including polishing, to improve quality and reduce costs. Global supply chain disruptions have emphasized the importance of domestic manufacturing and high-yield processes, further increasing investment in polishing technologies. Additionally, sustainability concerns are prompting the development of eco-friendly slurry formulations, recycling systems, and water-saving process designs. These evolving dynamics are positioning SiC wafer polishing as a strategic and fast-growing segment within the wider semiconductor ecosystem, essential for the advancement of power electronics in an energy-conscious world.

SCOPE OF STUDY:

The report analyzes the Silicon Carbide (SiC) Wafer Polishing market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Process Type (Mechanical Process, Chemical & Mechanical Process, Electropolishing Process, Chemical Process, Plasma-Assisted Process); Product Type (Abrasive Powders, Polishing Pads, Diamond Slurries, Colloidal Silica Suspensions); Application (Power Electronics Application, LED Application, Sensors & Detectors Application, RF & Microwave Devices Application)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 32 Featured) -

AI INTEGRATIONS

We're transforming market and competitive intelligence with validated expert content and AI tools.

Instead of following the general norm of querying LLMs and Industry-specific SLMs, we built repositories of content curated from domain experts worldwide including video transcripts, blogs, search engines research, and massive amounts of enterprise, product/service, and market data.

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by increasing the Cost of Goods Sold (COGS), reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

III. MARKET ANALYSIS

IV. COMPETITION

(ÁÖ)±Û·Î¹úÀÎÆ÷¸ÞÀÌ¼Ç 02-2025-2992 kr-info@giikorea.co.kr
¨Ï Copyright Global Information, Inc. All rights reserved.
PC¹öÀü º¸±â