고성능 파워 일렉트로닉스 및 스마트폰, 노트북 등의 RF(무선 주파수) 부품 용도 증가가 GaN 반도체 소자 채택을 촉진하고 있습니다. GaN 소자는 기존 실리콘 기반 소자에 비해 고효율, 고속 스위칭, 높은 열전도성을 제공하기 때문에 시장 규모는 2024년에 34억 5,000만 달러를 넘어 2031년에는 약 105억 4,000만 달러에 달할 것으로 예상됩니다.
이와 더불어, 전기자동차 파워트레인 및 재생에너지 시스템에서의 채택이 증가하고 있는 것도 GaN 반도체 소자 채택에 박차를 가하고 있습니다. GaN 디바이스의 기능 향상과 비용 절감으로 이어지는 지속적인 R&D 활동은 2024년부터 2031년까지 16.53%의 CAGR로 시장 성장을 가능하게 하고 있습니다.
GaN 반도체 소자 시장 정의/개요
GaN(질화갈륨) 반도체 소자는 와이드 밴드갭 재료인 질화갈륨으로 만든 전자부품입니다. GaN은 실리콘에 비해 높은 내압, 높은 열전도율, 고속 스위칭 등 우수한 전기적 특성을 가지고 있습니다. 이러한 특성으로 인해 GaN 소자는 더 높은 전압, 주파수, 온도에서 고효율로 작동할 수 있습니다.
GaN 반도체 소자는 다양한 분야에서 사용되고 있습니다. 소비자 전자기기에서는 그 효율성과 컴팩트한 크기로 인해 충전기나 어댑터에 전력을 공급하고 있습니다. 통신 분야에서는 5G 인프라 및 위성통신 시스템의 고주파 및 고출력 애플리케이션에 필수적입니다. GaN 디바이스는 전기자동차의 파워트레인 및 충전 시스템을 위한 자동차 산업과 태양광 인버터 및 풍력 터빈의 효율적인 전력 변환을 위한 재생에너지 분야에서도 각광받고 있습니다. 또한, 산업 시스템, 레이더, 전자전 시스템 등 군사 및 항공우주 분야에도 적용되고 있습니다.
에너지 효율이 높은 파워 일렉트로닉스에 대한 수요 증가가 GaN 반도체 소자 시장을 주도하고 있습니다. 미국 에너지부에 따르면, GaN 기반 파워 디바이스는 실리콘 대체품에 비해 에너지 손실을 최대 50%까지 줄일 수 있다고 합니다. 유럽연합 집행위원회는 2020년에서 2023년 사이에 전력전자 분야에서 GaN의 채택이 35% 증가할 것이라고 보고했습니다. 이러한 추세는 가전제품, 자동차를 포함한 다양한 응용 분야에서 더 높은 효율이 요구되고 있는 것이 배경입니다. 2024년 2월, 인피니언 테크놀러지스는 GaN 생산능력을 확대하기 위해 10억 달러를 투자할 것이라고 발표했습니다. 마찬가지로, 텍사스 인스트루먼트는 2024년 4월, 전기자동차 시장을 겨냥한 GaN 기반 전원 관리 IC 신제품 라인을 발표했습니다.
5G 인프라의 확장은 GaN RF 디바이스에 대한 수요를 증가시키고 있습니다. Global Mobile Suppliers Association은 2023년 도입된 5G 기지국의 60%가 GaN 기반 RF 전력 증폭기를 사용했다고 보고했습니다. 미국 연방통신위원회(FCC)는 2021년에서 2023년까지 무선 인프라를 위한 GaN RF 디바이스 출하량이 40% 증가할 것으로 예상했습니다. 이러한 성장의 원동력은 고주파 응용 분야에서 GaN의 우수한 성능입니다. 2024년 3월, Qorvo는 5G mmWave 애플리케이션을 위한 새로운 GaN-on-SiC RF 솔루션 시리즈를 발표했습니다. NXP 반도체는 2024년 5월, 주요 통신 장비 제조업체와 협력하여 GaN 기반 차세대 5G Massive MIMO 시스템을 개발했습니다.
자동차 업계에서는 전기자동차와 자율주행차로의 전환이 GaN의 채택을 촉진하고 있습니다. 미국 교통부는 2025년까지 전기자동차의 30%에 GaN 디바이스가 사용될 것으로 예측하고 있습니다. 유럽자동차산업협회의 보고서에 따르면, 2022년부터 2024년까지 전기자동차에 탑재되는 GaN 기반 파워 일렉트로닉스는 55% 증가할 것이라고 합니다. 이러한 추세는 전력 변환 효율을 개선하고 전체 시스템 크기를 줄일 수 있는 GaN의 능력에 기인합니다. 온세미컨덕터는 2024년 1월, EV 차량용 충전기 및 DC-DC 컨버터를 위한 종합적인 GaN 솔루션을 발표했습니다. 나비타스반도체는 2024년 6월, 차세대 전기자동차용 GaN 기반 파워트레인을 개발하기 위해 주요 자동차 제조사와 전략적 제휴를 발표했습니다.
GaN 반도체 소자 시장은 실리콘에 비해 공급망이 성숙하지 않은 것이 억제요인으로 작용하고 있습니다. GaN 소재 및 부품의 가용성이 제한적이어서 공급 제약과 비용 상승의 잠재적 원인이 되고 있습니다. 공급망의 미성숙으로 인해 리드타임이 길어지고, 가용성에 문제가 발생하여 생산 일정과 확장성에 영향을 미칠 수 있습니다.
GaN 디바이스를 기존 실리콘 기반 시스템에 통합하는 것은 복잡하고 비용이 많이 들 수 있습니다. 재료 특성 및 성능 특성에 큰 차이가 있기 때문에 대폭적인 재설계 및 적응 작업이 필요합니다. 이러한 복잡성으로 인해 구현에 소요되는 시간과 비용이 증가하여 기업이 GaN 기술로 원활하게 전환하는 데 어려움을 겪고 있습니다.
GaN은 또 다른 와이드 밴드갭 재료인 탄화규소(SiC)와의 강력한 경쟁에 직면해 있습니다. SiC 디바이스는 이미 고출력 애플리케이션에서 높은 열전도율과 견고성 등의 장점을 가지고 있습니다. 이러한 경쟁은 특히 SiC가 강력한 발판을 가지고 있는 시장에서 GaN 디바이스의 성장 가능성을 제한할 수 있습니다.
GaN 디바이스는 우수한 성능에도 불구하고 비교적 새로운 시장이기 때문에 채택에 신중을 기하고 있습니다. 잠재적 사용자는 광범위한 검증과 입증된 신뢰성이 없으면 주저할 수 있으며, 산업계가 GaN 디바이스의 성능을 테스트하고 신뢰하는 데 시간이 필요하기 때문에 시장 침투가 늦어지고 있습니다.
Increased use in high-performance power electronics and RF (radio frequency) components for devices like smartphones and laptops are propelling the adoption of GaN semiconductor device. GaN devices offer higher efficiency, faster switching speeds, and higher thermal conductivity compared to traditional silicon-based devices which is driving the market size surpass USD 3.45 Billion valued in 2024 to reach a valuation of around USD 10.54 Billion by 2031.
In addition to this, rising adoption in electric vehicle powertrains and renewable energy systems is spurring up the adoption of GaN semiconductor device. Ongoing research and development activities leading to enhanced GaN device capabilities and reduced costs is enabling the market grow at a CAGR of 16.53% from 2024 to 2031.
GaN Semiconductor Device Market: Definition/ Overview
GaN (Gallium Nitride) semiconductor devices are electronic components made from gallium nitride, a wide bandgap material. GaN offers superior electrical properties compared to silicon, such as higher breakdown voltage, greater thermal conductivity, and faster switching speeds. These properties make GaN devices highly efficient and capable of operating at higher voltages, frequencies, and temperatures.
GaN semiconductor devices are used across various sectors. In consumer electronics, the power chargers and adapters due to their efficiency and compact size. In telecommunications, they are integral to 5G infrastructure and satellite communication systems for high-frequency and high-power applications. GaN devices are also prominent in the automotive industry for electric vehicle powertrains and charging systems, and in renewable energy for efficient power conversion in solar inverters and wind turbines. Additionally, they find applications in industrial systems, military and aerospace for radar, and electronic warfare systems.
The growing demand for energy-efficient power electronics is driving the GaN semiconductor device market. According to the U.S. Department of Energy, GaN-based power devices can reduce energy losses by up to 50% compared to silicon alternatives. The European Commission reported that GaN adoption in power electronics increased by 35% between 2020 and 2023. This trend is fueled by the need for higher efficiency in various applications, including consumer electronics and automotive. In February 2024, Infineon Technologies announced a $1 billion investment to expand its GaN production capacity. Similarly, Texas Instruments introduced a new line of GaN-based power management ICs in April 2024, targeting the electric vehicle market.
The expansion of 5G infrastructure is boosting the demand for GaN RF devices. The Global Mobile Suppliers Association reported that GaN-based RF power amplifiers were used in 60% of 5G base stations deployed in 2023. The U.S. Federal Communications Commission noted a 40% increase in GaN RF device shipments for wireless infrastructure from 2021 to 2023. This growth is driven by GaN's superior performance in high-frequency applications. In March 2024, Qorvo unveiled a new series of GaN-on-SiC RF solutions for 5G mmWave applications. NXP Semiconductors partnered with a leading telecom equipment manufacturer in May 2024 to develop next-generation GaN-based 5G massive MIMO systems.
The automotive industry's shift towards electric and autonomous vehicles is propelling GaN adoption. The U.S. Department of Transportation projected that GaN devices would be used in 30% of electric vehicles by 2025. A report from the European Automobile Manufacturers Association showed a 55% increase in GaN-based power electronics in EVs from 2022 to 2024. This trend is driven by GaN's ability to improve power conversion efficiency and reduce overall system size. In January 2024, ON Semiconductor launched a comprehensive GaN solution for EV onboard chargers and DC-DC converters. Navitas Semiconductor announced in June 2024 a strategic partnership with a major automotive manufacturer to develop GaN-based powertrains for next-generation electric vehicles.
The GaN semiconductor device market is hindered by a less mature supply chain compared to silicon. The availability of GaN materials and components is limited, leading to potential supply constraints and higher costs. This immaturity in the supply chain can result in longer lead times and availability issues, impacting production schedules and scalability.
Integrating GaN devices with existing silicon-based systems can be complex and costly. The significant differences in material properties and performance characteristics necessitate substantial redesign and adaptation efforts. This complexity increases the time and cost for implementation, making it challenging for companies to seamlessly transition to GaN technology.
GaN faces strong competition from Silicon Carbide (SiC), another wide bandgap material. SiC devices are already well-established in high-power applications and offer advantages such as higher thermal conductivity and robustness. This competition can limit the growth potential for GaN devices, especially in markets where SiC has a strong foothold.
GaN devices, despite their superior performance, are relatively new to the market, leading to cautious adoption. Potential users may hesitate without extensive validation and proven reliability, causing market penetration to slow down as industries need time to test and trust GaN devices' performance..
Power semiconductors is emerging as the dominant segment in the GaN semiconductor device market. According to the U.S. Department of Energy, GaN-based power devices accounted for 45% of the total GaN semiconductor market in 2023. The European Power Electronics Association reported a 38% year-over-year growth in GaN power semiconductor adoption from 2021 to 2024. This dominance is driven by the increasing demand for high-efficiency power conversion in various applications. In February 2024, Infineon Technologies announced that its GaN power semiconductor revenue had doubled over the past two years. Texas Instruments introduced a new line of 650V GaN power stages in April 2024, targeting data center and industrial applications.
The electric vehicle (EV) sector is a key driver for GaN power semiconductor dominance. The U.S. Environmental Protection Agency reported that GaN power devices were used in 30% of new EVs sold in 2023, up from 15% in 2021. China's Ministry of Industry and Information Technology noted a 50% increase in GaN power semiconductor usage in EVs from 2022 to 2024. This trend is fueled by GaN's ability to improve power conversion efficiency and reduce overall system size. In March 2024, ON Semiconductor launched a 900V GaN power module specifically designed for EV traction inverters. Navitas Semiconductor partnered with a leading EV manufacturer in May 2024 to develop next-generation GaN-based onboard chargers.
The renewable energy sector is also contributing to the dominance of GaN power semiconductors. The International Energy Agency reported that GaN-based solar inverters achieved a market share of 25% in 2023, up from 10% in 2020. The U.S. National Renewable Energy Laboratory projected that GaN power devices could improve solar inverter efficiency by up to 3% by 2025. This growth is driven by the need for higher efficiency and power density in renewable energy systems. In January 2024, GaN Systems introduced a new series of power transistors optimized for solar and wind power applications. Transphorm announced in June 2024 the successful deployment of its GaN power devices in a large-scale energy storage project, demonstrating improved conversion efficiency and reliability.
Power Electronics have emerged as the dominant application in the GaN Semiconductor Device Market. According to the U.S. Department of Energy, GaN-based power electronics accounted for 55% of the total GaN semiconductor market in 2023. The European Power Electronics Association reported a 42% year-over-year growth in GaN power electronics adoption from 2021 to 2024. This dominance is driven by the increasing demand for high-efficiency power conversion across various industries. In February 2024, Infineon Technologies announced that its GaN power electronics revenue had tripled over the past three years. Texas Instruments introduced a new line of GaN-based power management ICs in April 2024, targeting consumer electronics and industrial applications.
The electric vehicle (EV) sector is a key driver for GaN power electronics dominance. The U.S. Environmental Protection Agency reported that GaN power electronics were used in 40% of new EVs sold in 2023, up from 20% in 2021. China's Ministry of Industry and Information Technology noted a 60% increase in GaN power electronics usage in EVs from 2022 to 2024. This trend is fueled by GaN's ability to improve power conversion efficiency and reduce overall system size in EV powertrains. In March 2024, ON Semiconductor launched a comprehensive GaN power electronics solution for EV traction inverters and onboard chargers. Navitas Semiconductor partnered with a leading EV manufacturer in May 2024 to develop next-generation GaN-based power electronic systems for electric vehicles.
The renewable energy sector is also contributing to the dominance of GaN power electronics. The International Energy Agency reported that GaN-based solar inverters achieved a market share of 30% in 2023, up from 12% in 2020. The U.S. National Renewable Energy Laboratory projected that GaN power electronics could improve overall solar system efficiency by up to 5% by 2025. This growth is driven by the need for higher efficiency and power density in renewable energy systems. In January 2024, GaN Systems introduced a new series of power modules optimized for solar and wind power applications. Transphorm announced in June 2024 the successful deployment of its GaN power electronics in a large-scale grid-tied energy storage project, demonstrating improved conversion efficiency and reliability.
The Asia Pacific region has emerged as the dominant player in the GaN semiconductor device market. According to China's Ministry of Industry and Information Technology, the country's GaN device production increased by 45% from 2021 to 2023. Japan's Ministry of Economy, Trade and Industry reported that GaN semiconductor exports grew by 38% between 2020 and 2024. This dominance is driven by strong government support and a robust electronics manufacturing ecosystem. In February 2024, Taiwan Semiconductor Manufacturing Company (TSMC) announced a $2 billion investment to expand its GaN fabrication capacity. South Korea's Samsung Electronics introduced a new line of GaN-based power devices in April 2024, targeting the consumer electronics and automotive markets.
The rapid adoption of 5G technology in Asia Pacific is fueling the demand for GaN RF devices. China's National Bureau of Statistics reported that GaN-based RF power amplifiers were used in 70% of 5G base stations deployed in the country by 2023. The Indian Department of Telecommunications noted a 55% increase in GaN RF device imports for wireless infrastructure from 2022 to 2024. This growth is driven by GaN's superior performance in high-frequency applications. In March 2024, Sumitomo Electric Industries unveiled a new series of GaN-on-SiC RF solutions for 5G mmWave applications. Mitsubishi Electric partnered with a leading Chinese telecom equipment manufacturer in May 2024 to develop next-generation GaN-based 5G massive MIMO systems.
North America's GaN semiconductor device market is experiencing rapid growth, driven by increasing demand for high-power and high-frequency applications. The region's robust technological infrastructure and strong presence of key industry players contribute to its market dominance. The automotive and telecommunications sectors are particularly fuelling this growth, as GaN devices offer superior performance in electric vehicles and 5G networks.
According to the U.S. Department of Energy, GaN-based power electronics could reduce energy losses by up to 50% in various applications. The U.S. government has allocated $17 million for GaN research and development in 2023. Market analysts predict that the North American GaN semiconductor device market will reach $1.2 billion by 2026, with a compound annual growth rate (CAGR) of 22.4% from 2021 to 2026.
Recent developments from key players underscore the market's dynamism. In March 2024, Wolfspeed announced a $6.5 billion investment in a new GaN fabrication facility in North Carolina. Qorvo, another major player, reported a 35% year-over-year increase in GaN-related revenues in their Q2 2024 earnings call. These advancements highlight the region's commitment to maintaining its leadership in GaN semiconductor technology.
The GaN semiconductor device market is a dynamic and competitive space, characterized by a diverse range of players vying for market share. These players are on the run for solidifying their presence through the adoption of strategic plans such as collaborations, mergers, acquisitions, and political support.
The organizations are focusing on innovating their product line to serve the vast population in diverse regions. Some of the prominent players operating in the GaN semiconductor device market include: