질화갈륨 반도체 디바이스 시장 규모, 점유율, 성장 분석 : 제품별, 부품별, 웨이퍼 사이즈별, 용도별, 최종 용도별, 지역별 - 산업 예측(2025-2032년)
Gallium Nitride Semiconductor Devices Market Size, Share, and Growth Analysis, By Product (GaN Radio Frequency Devices, GaN Opto-semiconductors), By Component, By Wafer Size, By Application, By End-Use, By Region - Industry Forecast 2025-2032
상품코드:1663832
리서치사:SkyQuest
발행일:2025년 02월
페이지 정보:영문 197 Pages
라이선스 & 가격 (부가세 별도)
한글목차
질화갈륨 반도체 디바이스 시장 규모는 2023년에 67억 달러로, 2024년 79억 5,000만 달러에서 2032년에는 312억 2,000만 달러로 성장하며, 예측 기간(2025-2032년)의 CAGR은 18.65%로 성장할 전망입니다.
질화갈륨(GaN) 반도체 소자 시장은 전자 및 전기자동차의 급격한 수요 증가에 힘입어 큰 성장이 예상됩니다. 고성능 전자제품으로의 전환과 에너지 효율에 대한 높은 관심은 특히 파워 반도체 용도에서 GaN의 채택을 더욱 촉진할 것으로 예상되며, GaN의 연구개발에 대한 세계 투자는 가정용 전자제품 분야의 확대와 재생에너지 솔루션에서의 사용 증가와 함께 시장 기업에게 충분한 기회를 제공합니다. 시장 기업에게 충분한 기회를 창출하고 있습니다. 그러나 기판 가용성 제한, 높은 제조 비용, 실리콘 기반 기술과의 경쟁, 표준화 부족 등의 문제가 진행에 걸림돌이 될 수 있습니다. 따라서 기업은 이러한 제약을 극복하고 향후 수년간 GaN 반도체의 급성장 기회를 활용해야 합니다.
목차
서론
조사의 목적
조사 범위
정의
조사 방법
정보 조달
2차와 1차 데이터 방법
시장 규모 예측
시장의 전제조건과 제한
개요
세계 시장 전망
공급과 수요 동향 분석
부문별 기회 분석
시장 역학과 전망
시장 개요
시장 규모
시장 역학
촉진요인과 기회
억제요인과 과제
Porter의 산업 분석
주요 시장 인사이트
주요 성공 요인
경쟁의 정도
주요 투자 기회
시장 에코시스템
시장의 매력 지수(2024년)
PESTEL 분석
거시경제 지표
밸류체인 분석
가격 분석
사례 연구
규제 상황
특허 분석
질화갈륨 반도체 디바이스 시장 규모 : 제품별 & CAGR(2025-2032)
시장 개요
GaN 무선 주파수(RF) 디바이스
GaN 광반도체
GaN 파워 디바이스
질화갈륨 반도체 디바이스 시장 규모 : 컴포넌트별 & CAGR(2025-2032)
시장 개요
트랜지스터
다이오드
정류기
파워 IC
질화갈륨 반도체 디바이스 시장 규모 : 웨이퍼 사이즈별 & CAGR(2025-2032)
시장 개요
최대 4인치
4인치-8인치
8인치
질화갈륨 반도체 디바이스 시장 규모 : 용도별 & CAGR(2025-2032)
시장 개요
파워 드라이브
무선 주파수
LiDAR(Light Detection and Ranging)
무선 충전
기타
질화갈륨 반도체 디바이스 시장 규모 : 최종 용도별 & CAGR(2025-2032)
시장 개요
자동차
가전
항공우주 및 방위
헬스케어
산업
기타
질화갈륨 반도체 디바이스 시장 규모 : 지역별 & CAGR(2025-2032)
북미
미국
캐나다
유럽
독일
스페인
프랑스
영국
이탈리아
기타 유럽 지역
아시아태평양
중국
인도
일본
한국
기타 아시아태평양
라틴아메리카
브라질
기타 라틴아메리카 지역
중동 및 아프리카
GCC 국가
남아프리카공화국
기타 중동 및 아프리카
경쟁 정보
상위 5사의 비교
주요 기업의 시장 포지셔닝(2024년)
주요 시장 기업이 채택한 전략
최근 시장 동향
기업의 시장 점유율 분석(2024년)
주요 기업의 기업 개요
기업의 상세
제품 포트폴리오 분석
기업의 부문별 점유율 분석
매출의 전년대비 비교(2022-2024)
주요 기업 개요
Qorvo, Inc.(USA)
Wolfspeed, Inc.(USA)
Sumitomo Electric Industries, Ltd.(Japan)
Infineon Technologies AG(Germany)
GaN Systems(Canada)
Efficient Power Conversion Corporation(USA)
MACOM Technology Solutions Holdings, Inc.(USA)
NXP Semiconductors(Netherlands)
Texas Instruments Incorporated(USA)
ON Semiconductor(USA)
Toshiba Corporation(Japan)
Mitsubishi Electric Corporation(Japan)
STMicroelectronics(Switzerland)
Analog Devices, Inc.(USA)
Panasonic Corporation(Japan)
Broadcom Inc.(USA)
Renesas Electronics Corporation(Japan)
Cree, Inc.(USA)
Samsung Electronics Co., Ltd.(South Korea)
Microchip Technology Inc.(USA)
결론과 제안
KSA
영문 목차
영문목차
Gallium Nitride Semiconductor Devices Market size was valued at USD 6.7 billion in 2023 and is poised to grow from USD 7.95 billion in 2024 to USD 31.22 billion by 2032, growing at a CAGR of 18.65% during the forecast period (2025-2032).
The gallium nitride (GaN) semiconductor device market is poised for significant growth, driven by the soaring demand for electronics and electric vehicles. The shift towards high-performance electronics and a strong focus on energy efficiency will further enhance GaN adoption, particularly in power semiconductor applications. Global investments in GaN R&D are creating ample opportunities for market players, alongside the expansion of the consumer electronics sector and increasing use in renewable energy solutions. However, challenges such as limited substrate availability, high production costs, competition from silicon-based technologies, and a lack of standardization may hinder progress. As such, companies must navigate these constraints to leverage the burgeoning opportunities within the GaN semiconductor landscape in the coming years.
Top-down and bottom-up approaches were used to estimate and validate the size of the Gallium Nitride Semiconductor Devices market and to estimate the size of various other dependent submarkets. The research methodology used to estimate the market size includes the following details: The key players in the market were identified through secondary research, and their market shares in the respective regions were determined through primary and secondary research. This entire procedure includes the study of the annual and financial reports of the top market players and extensive interviews for key insights from industry leaders such as CEOs, VPs, directors, and marketing executives. All percentage shares split, and breakdowns were determined using secondary sources and verified through Primary sources. All possible parameters that affect the markets covered in this research study have been accounted for, viewed in extensive detail, verified through primary research, and analyzed to get the final quantitative and qualitative data.
Global Gallium Nitride Semiconductor Devices Market is segmented by Product, Component, Wafer Size, Application, End-Use and region. Based on Product, the market is segmented into GaN Radio Frequency (RF) Devices, GaN Opto-semiconductors and GaN Power Devices. Based on Component, the market is segmented into Transistor, Diode, Rectifier and Power IC. Based on Wafer Size, the market is segmented into < 4-inch, 4-inch- 8-inch and > 8-inch. Based on Application, the market is segmented into Power Drives, Radio Frequency, Light Detection and Ranging (LiDAR), Wireless Charging and Others. Based on End-Use, the market is segmented into Automotive, Consumer Electronics, Aerospace & Defense, Healthcare, Industrial and Others. Based on region, the market is segmented into North America, Europe, Asia Pacific, Latin America and Middle East & Africa.
Driver of the Gallium Nitride Semiconductor Devices Market
The global market for Gallium Nitride semiconductor devices is being significantly driven by the rising popularity of electric vehicles, fueled by a growing emphasis on reducing emissions. As the demand for electric vehicles climbs, the extensive incorporation of Gallium Nitride semiconductor devices into critical components such as power converters, inverters, and chargers will likely enhance the market's outlook over the long term. This trend not only supports the shift towards cleaner transportation options but also highlights the crucial role of advanced semiconductor technology in enabling higher efficiency and performance in electric vehicle systems, ultimately contributing to the overall growth of the Gallium Nitride semiconductor devices market.
Restraints in the Gallium Nitride Semiconductor Devices Market
The production of gallium nitride semiconductor devices is significantly influenced by the accessibility of substrate materials like silicon carbide (SiC) or sapphire. Unfortunately, these essential raw materials are not only limited in availability but also tend to be quite expensive. This scarcity and high cost can lead to disruptions within the supply and demand chain for gallium nitride semiconductor devices, potentially hampering market growth. Consequently, manufacturers may face challenges in sourcing the necessary materials, which can adversely impact their ability to meet consumer demand and maintain production efficiency. Thus, these constraints pose a considerable restraint on the market for gallium nitride semiconductor devices.
Market Trends of the Gallium Nitride Semiconductor Devices Market
The Gallium Nitride (GaN) Semiconductor Devices market is witnessing a significant trend toward the miniaturization of power electronics, driven by the global demand for compact and lightweight technology solutions. As industries increasingly prioritize efficiency and space optimization, GaN devices are positioned to capitalize on this shift, offering superior performance in smaller form factors. This trend presents new business opportunities for GaN manufacturers, necessitating substantial investments in research and development to innovate and overcome engineering challenges. Continued advancements in miniaturization are expected to enhance the functionality and applicability of GaN semiconductors across various sectors, ultimately driving sales and market growth.
Table of Contents
Introduction
Objectives of the Study
Scope of the Report
Definitions
Research Methodology
Information Procurement
Secondary & Primary Data Methods
Market Size Estimation
Market Assumptions & Limitations
Executive Summary
Global Market Outlook
Supply & Demand Trend Analysis
Segmental Opportunity Analysis
Market Dynamics & Outlook
Market Overview
Market Size
Market Dynamics
Drivers & Opportunities
Restraints & Challenges
Porters Analysis
Competitive rivalry
Threat of substitute
Bargaining power of buyers
Threat of new entrants
Bargaining power of suppliers
Key Market Insights
Key Success Factors
Degree of Competition
Top Investment Pockets
Market Ecosystem
Market Attractiveness Index, 2024
PESTEL Analysis
Macro-Economic Indicators
Value Chain Analysis
Pricing Analysis
Case Studies
Regulatory Landscape
Patent Analysis
Global Gallium Nitride Semiconductor Devices Market Size by Product & CAGR (2025-2032)
Market Overview
GaN Radio Frequency (RF) Devices
GaN Opto-semiconductors
GaN Power Devices
Global Gallium Nitride Semiconductor Devices Market Size by Component & CAGR (2025-2032)
Market Overview
Transistor
Diode
Rectifier
Power IC
Global Gallium Nitride Semiconductor Devices Market Size by Wafer Size & CAGR (2025-2032)
Market Overview
< 4-inch
4-inch- 8-inch
8-inch
Global Gallium Nitride Semiconductor Devices Market Size by Application & CAGR (2025-2032)
Market Overview
Power Drives
Radio Frequency
Light Detection and Ranging (LiDAR)
Wireless Charging
Others
Global Gallium Nitride Semiconductor Devices Market Size by End-Use & CAGR (2025-2032)
Market Overview
Automotive
Consumer Electronics
Aerospace & Defense
Healthcare
Industrial
Others
Global Gallium Nitride Semiconductor Devices Market Size & CAGR (2025-2032)
North America (Product, Component, Wafer Size, Application, End-Use)
US
Canada
Europe (Product, Component, Wafer Size, Application, End-Use)
Germany
Spain
France
UK
Italy
Rest of Europe
Asia Pacific (Product, Component, Wafer Size, Application, End-Use)
China
India
Japan
South Korea
Rest of Asia-Pacific
Latin America (Product, Component, Wafer Size, Application, End-Use)
Brazil
Rest of Latin America
Middle East & Africa (Product, Component, Wafer Size, Application, End-Use)