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Gallium Arsenide (GaAs) Electronic Devices
»óǰÄÚµå : 1757752
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¹ßÇàÀÏ : 2025³â 06¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 277 Pages
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2024³â¿¡ 111¾ï ´Þ·¯·Î ÃßÁ¤µÇ´Â °¥·ýºñ¼Ò(GaAs) ÀüÀÚ ¼ÒÀÚ ¼¼°è ½ÃÀåÀº ºÐ¼® ±â°£ÀÎ 2024-2030³â¿¡ CAGR 6.8%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 164¾ï ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ÀÌ º¸°í¼­¿¡¼­ ºÐ¼®Çϰí ÀÖ´Â ºÎ¹® Áß ÇϳªÀÎ LEC ¼ºÀå GaAs ¼ÒÀÚ´Â CAGR 7.7%¸¦ ±â·ÏÇÏ¸ç ºÐ¼® ±â°£ Á¾·á±îÁö 120¾ï ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. VGF ¼ºÀå GaAs ¼ÒÀÚ ºÐ¾ßÀÇ ¼ºÀå·üÀº ºÐ¼® ±â°£ µ¿¾È CAGR 4.6%·Î ÃßÁ¤µË´Ï´Ù.

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°¥·ýºñ¼Ò(GaAs) ¼ÒÀÚ°¡ °íÁÖÆÄ ¹× ±¤ÀüÀÚ ¾ÖÇø®ÄÉÀ̼ÇÀ» º¯È­½ÃŰ´Â ÀÌÀ¯´Â ¹«¾ùÀϱî?

°¥·ýºñ¼Ò(GaAs) ÀüÀÚ ¼ÒÀÚ´Â ±âÁ¸ ½Ç¸®ÄÜ ±â¹Ý ¼ÒÀÚ¿¡ ºñÇØ ¿ì¼öÇÑ ÀüÀÚÀû Ư¼ºÀ» °¡Áö°í ÀÖ¾î °íÁÖÆÄ ÀüÀÚ ¹× ±¤ÀüÀÚ ºÐ¾ß¿¡ Çõ¸íÀ» ÀÏÀ¸Å°°í ÀÖÀ¸¸ç, III-VÁ· È­ÇÕ¹° ¹ÝµµÃ¼ÀÎ GaAs´Â ½Ç¸®Äܺ¸´Ù ³ôÀº ÀüÀÚ À̵¿µµ¿Í Æ÷È­µµ¸¦ °¡Áö°í ÀÖ¾î ´õ ³ôÀº Á֯ļö¿Í È¿À²·Î ÀÛµ¿ÇÏ´Â ¼ÒÀÚ¸¦ °¡´ÉÇÏ°Ô ÇÕ´Ï´Ù. Æ÷È­ ¼Óµµ¸¦ ÀÚ¶ûÇϸç, ´õ ³ôÀº Á֯ļö¿Í È¿À²·Î µ¿ÀÛÇÏ´Â µð¹ÙÀ̽º¸¦ °¡´ÉÇÏ°Ô ÇÕ´Ï´Ù. µû¶ó¼­ GaAs ±â¹Ý ºÎǰÀº ¸¶ÀÌÅ©·ÎÆÄ Á֯ļö Åë½Å, ·¹ÀÌ´õ ½Ã½ºÅÛ, À§¼º ¼Û¼ö½Å±â, °í¼Ó µ¥ÀÌÅÍ Àü¼Û°ú °°Àº ¾ÖÇø®ÄÉÀ̼ǿ¡ ÀûÇÕÇÕ´Ï´Ù. ¶ÇÇÑ ½Ç¸®Äܰú ´Þ¸® GaAs´Â Á÷Á¢ ¹êµå°¸À» °¡Áö°í Àֱ⠶§¹®¿¡ ºûÀÇ ¹æ»ç ¹× Èí¼ö È¿À²ÀÌ ¸Å¿ì ³ô¾Æ ·¹ÀÌÀú ´ÙÀÌ¿Àµå, ±¤°ËÃâ±â, žçÀüÁö¿¡ ÇʼöÀûÀΠƯ¼ºÀ» °¡Áö°í ÀÖ½À´Ï´Ù. ¹«¼± Åë½Å ºÐ¾ß¿¡¼­ GaAs Àü·Â ÁõÆø±â¿Í ÀúÀâÀ½ ÁõÆø±â´Â ½º¸¶Æ®Æù, Wi-Fi ¶ó¿ìÅÍ, ±âÁö±¹, ƯÈ÷ 5G¿Í °°Àº °íÁÖÆÄ º¯Á¶ ¹æ½Ä¿¡¼­ ½ÅÈ£ ¹«°á¼ºÀ» º¸ÀåÇÏ´Â µ¥ ÇʼöÀûÀÔ´Ï´Ù. ¶ÇÇÑ, ÀÌ ¼ÒÀç´Â ¹æ»ç¼± ¹× ¿­ ¿­È­¿¡ °­Çϱ⠶§¹®¿¡ ¿ìÁÖ¿ë ÀüÀÚ±â±â ¹× ±º¿ë RF ½Ã½ºÅÛ¿¡¼­ ¼±È£µÇ°í ÀÖ½À´Ï´Ù. ´õ ÀÛ°í, ´õ ºü¸£°í, ´õ ¿¡³ÊÁö È¿À²ÀûÀÎ ºÎǰ¿¡ ´ëÇÑ ¼ö¿ä°¡ °è¼Ó Áõ°¡ÇÔ¿¡ µû¶ó GaAs´Â ½Ç¸®ÄÜÀÌ È¿À²ÀûÀ¸·Î ´ëÀÀÇÒ ¼ö ¾ø´Â ±â¼úÀ» ±¸ÇöÇÏ´Â µ¥ ÇʼöÀûÀÎ ¿ä¼Ò·Î ÀÚ¸® Àâ°í ÀÖ½À´Ï´Ù. °íÁÖÆÄ ¹× °í¼º´É ÀüÀÚÁ¦Ç°À¸·ÎÀÇ ÀüȯÀ¸·Î ÀÎÇØ GaAs´Â ÃֽŠÅë½Å ¹× ±¤ ½Ã½ºÅÛ Çõ½ÅÀÇ Á߽ɿ¡ ¼­°Ô µÇ¾ú½À´Ï´Ù.

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°¥·ýºñ¼Ò(GaAs) ÀüÀÚ ¼ÒÀÚ¿¡ ´ëÇÑ ¼ö¿ä´Â ´Ù¾çÇÑ ÃÖÁ¾ ¿ëµµ ½ÃÀåÀÌ ÁÖµµÇϰí ÀÖÀ¸¸ç, °¢ ½ÃÀåÀº GaAs ¼ÒÀçÀÇ °íÀ¯ÇÑ Æ¯¼ºÀ» Ȱ¿ëÇÏ¿© Áß¿äÇÑ ¼º´É ¿ä°ÇÀ» ÃæÁ·Çϰí ÀÖ½À´Ï´Ù. Åë½Å ºÐ¾ß¿¡¼­ GaAs ±â¹Ý RF ÁõÆø±â ¹× Æ®·£Áö½ºÅÍ´Â ·¹°Å½Ã 3G ¹× 4G ½Ã½ºÅÛ¿¡¼­ ÃÖ÷´Ü 5G ¹× ¹Ì·¡Çü 6G ÀÎÇÁ¶ó¿¡ À̸£±â±îÁö ÀúÀâÀ½ ÁõÆø°ú ³ôÀº ¼±Çü¼ºÀÌ ÇʼöÀûÀÎ ¸ð¹ÙÀÏ ³×Æ®¿öÅ©¿¡¼­ ÇÙ½ÉÀûÀÎ ¿ªÇÒÀ» Çϰí ÀÖ½À´Ï´Ù. ½º¸¶Æ®Æù, ÅÂºí¸´, ¿þ¾î·¯ºí ±â±âµéÀÌ ¹«¼± Åë½ÅÀÇ ¹üÀ§¿Í È¿À²¼ºÀ» Çâ»ó½Ã۱â À§ÇØ GaAs ÁõÆø±â ¹× ½ºÀ§Ä¡¿¡ ´ëÇÑ ÀÇÁ¸µµ°¡ ³ô¾ÆÁü¿¡ µû¶ó, ¼ÒºñÀÚ ÀüÀÚ±â±â ¿ª½Ã Áß¿äÇÑ ½ÃÀå ºÐ¾ß°¡ µÇ¾ú½À´Ï´Ù. Ç×°ø¿ìÁÖ ¹× ¹æÀ§ ºÐ¾ß¿¡¼­´Â °¡È¤ÇÑ È¯°æ¿¡¼­ GaAs ¼ÒÀÚÀÇ °ß°í¼ºÀ¸·Î ÀÎÇØ Ç×°øÀüÀÚ, À§¼ºÅë½Å, ·¹ÀÌ´õ ¾î·¹ÀÌ, ÀüÀÚÀü ½Ã½ºÅÛ¿¡ ³Î¸® »ç¿ëµÇ°í ÀÖ½À´Ï´Ù. ÀÚµ¿Â÷ »ê¾÷µµ ADAS(÷´Ü ¿îÀüÀÚ º¸Á¶ ½Ã½ºÅÛ)¿Í V2X(Vehicle-to-Everything) Åë½Å ±â¼ú¿¡ GaAs ºÎǰÀ» äÅÃÇϱ⠽ÃÀÛÇß½À´Ï´Ù. ½ÅÀç»ý¿¡³ÊÁö ºÐ¾ß¿¡¼­´Â °íÈ¿À² GaAs žçÀüÁö°¡ ¿ìÁÖ¿ë ž籤¹ßÀü¿¡ Ȱ¿ëµÇ°í ÀÖÀ¸¸ç, Áö»ó Áý±¤Çü ž籤¹ßÀü(CPV) ½Ã½ºÅÛ¿¡µµ Ȱ¿ëÀÌ °ËÅäµÇ°í ÀÖ½À´Ï´Ù. ÇÑÆí, °íÇØ»óµµ ºÐ±¤¹ý, LiDAR, ÀÇ·á¿ë ¿µ»ó Àåºñ¿Í °°Àº »ê¾÷ ¹× °úÇÐ Àåºñ´Â GaAs ±¤¼ÒÀÚÀÇ ºü¸¥ ÀÀ´ä ½Ã°£°ú °¨µµ¿¡ ÀÇÁ¸Çϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ±¤¹üÀ§ÇÑ ¾ÖÇø®ÄÉÀÌ¼Ç ±â¹ÝÀº ¾çÀû ¼ö¿ä¸¦ ÃËÁøÇÒ »Ó¸¸ ¾Æ´Ï¶ó ÀåÄ¡ ¾ÆÅ°ÅØÃ³ ¹× Á¦Á¶ Çõ½ÅÀ» ÃËÁøÇÏ¿© GaAs°¡ Â÷¼¼´ë ÀüÀÚÁ¦Ç°ÀÇ Áß¿äÇÑ ¿øµ¿·ÂÀÌ µÉ ¼ö ÀÖµµ·Ï º¸ÀåÇÕ´Ï´Ù.

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GaAs ÀüÀÚ ÀåÄ¡ ¼¼°è ½ÃÀåÀº °æÁ¦Àû, ±â¼úÀû, Àü·«Àû ¿äÀÎÀÇ º¹ÀâÇÑ »óÈ£ ÀÛ¿ë¿¡ ÀÇÇØ ÁÖµµµÇ°í ÀÖÀ¸¸ç, ÀÌ´Â Çö´ë µðÁöÅÐ ÀÎÇÁ¶óÀÇ ¿ä±¸ »çÇ×ÀÇ ÁøÈ­¸¦ ¹Ý¿µÇϰí ÀÖ½À´Ï´Ù. °íÁÖÆÄ ½ºÆåÆ®·³°ú ´ë±Ô¸ð MIMO ±â¼ú¿¡ ÀÇÁ¸ÇÏ´Â 5G ³×Æ®¿öÅ©ÀÇ ±Þ¼ÓÇÑ È®ÀåÀº ±âÁö±¹°ú ¸ð¹ÙÀÏ ±â±â ¸ðµÎ¿¡¼­ °í¼º´É GaAs RF ºÎǰÀÇ Çʿ伺À» Å©°Ô Áõ°¡½Ã۰í ÀÖ½À´Ï´Ù. »ê¾÷, ÀÇ·á ¹× ¼ÒºñÀÚ ºÐ¾ß¿¡¼­ Ä¿³ØÆ¼µå µð¹ÙÀ̽º, ½º¸¶Æ® ¼¾¼­ ¹× IoT ½Ã½ºÅÛÀÌ ±ÞÁõÇϸ鼭 È¿À²ÀûÀ̰í ÄÄÆÑÆ®ÇÏ¸ç ½Å·ÚÇÒ ¼ö ÀÖ´Â °íÁÖÆÄ ÀüÀÚºÎǰ¿¡ ´ëÇÑ ¿ä±¸°¡ ´õ¿í ³ô¾ÆÁö°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ, ÁöÁ¤ÇÐÀû ¿ªÇаü°è¿Í ±¹³» ¹ÝµµÃ¼ °ø±Þ¸ÁÀ» È®º¸ÇÏ·Á´Â ³ë·ÂÀº ƯÈ÷ ¹Ì±¹, À¯·´, Áß±¹, Çѱ¹¿¡¼­ GaAs ÁÖÁ¶ ¹× R&D¿¡ ´ëÇÑ ÅõÀÚ È®´ëÀÇ µ¿±â°¡ µÇ°í ÀÖ½À´Ï´Ù. ±¹³» Ĩ Á¦Á¶ ¹× ±¹¹æ¿ë ÀüÀÚ±â±â¿¡ ´ëÇÑ Á¤ºÎÀÇ Áö¿øµµ GaAs ±â¼úÀÇ ¼ºÀå ±Ëµµ¿¡ ±â¿©Çϰí ÀÖ½À´Ï´Ù. ÁÖ¿ä GaAs ¿þÀÌÆÛ °ø±Þ¾÷ü, ÆÕ¸®½º µðÀÚÀÎ ÇϿ콺, ¼öÁ÷ ÅëÇÕ Á¦Á¶¾÷ü °£ÀÇ ½ÃÀå ÅëÇÕ°ú Àü·«Àû ÆÄÆ®³Ê½ÊÀº È®À强À» Çâ»ó½ÃŰ°í ±â¼ú Çõ½ÅÀ» °¡¼ÓÈ­Çϰí ÀÖ½À´Ï´Ù. ÇÑÆí, ȯ°æ ¹× ¿¡³ÊÁö È¿À²¿¡ ´ëÇÑ °ü½ÉÀÌ ³ô¾ÆÁö¸é¼­ »ê¾÷°è´Â ¿ÍÆ®´ç ´õ ³ôÀº ¼º´ÉÀ» Á¦°øÇÏ´Â µð¹ÙÀ̽º·Î ÀüȯÇϰí ÀÖÀ¸¸ç, ƯÈ÷ RF ÇÁ·ÐÆ®¿£µå ¸ðµâ ¹× Àü·Â ÁõÆø±â ºÐ¾ß¿¡¼­ GaAs°¡ °­Á¡À» º¸ÀÌ´Â ºÐ¾ß°¡ µÇ°í ÀÖ½À´Ï´Ù. LiDAR ½Ã½ºÅÛ µî »õ·Î¿î ¾ÖÇø®ÄÉÀ̼ÇÀÇ µîÀåÀ¸·Î ½ÃÀå ȯ°æÀº ´õ¿í È®´ëµÇ°í ÀÖ½À´Ï´Ù. ¼¼°è ´ë¿ªÆø ¼ö¿äÀÇ ±ÞÁõ°ú ¼º´É¿¡ ´ëÇÑ ±â´ëÄ¡°¡ ³ô¾ÆÁü¿¡ µû¶ó GaAs ÀüÀÚ ¼ÒÀÚ ½ÃÀåÀº ´Ù¸¥ ¹ÝµµÃ¼ Àç·á·Î´Â ½±°Ô ÀçÇöÇÒ ¼ö ¾ø´Â Áß¿äÇÑ ±â´ÉÀ» Áö¼ÓÀûÀ¸·Î Á¦°øÇϹǷΠÁö¼ÓÀûÀÎ È®ÀåÀ» ±â´ëÇÒ ¼ö ÀÖ½À´Ï´Ù.

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Global Gallium Arsenide (GaAs) Electronic Devices Market to Reach US$16.4 Billion by 2030

The global market for Gallium Arsenide (GaAs) Electronic Devices estimated at US$11.1 Billion in the year 2024, is expected to reach US$16.4 Billion by 2030, growing at a CAGR of 6.8% over the analysis period 2024-2030. LEC Grown GaAs Devices, one of the segments analyzed in the report, is expected to record a 7.7% CAGR and reach US$12.0 Billion by the end of the analysis period. Growth in the VGF Grown GaAs Devices segment is estimated at 4.6% CAGR over the analysis period.

The U.S. Market is Estimated at US$3.0 Billion While China is Forecast to Grow at 10.8% CAGR

The Gallium Arsenide (GaAs) Electronic Devices market in the U.S. is estimated at US$3.0 Billion in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$3.4 Billion by the year 2030 trailing a CAGR of 10.8% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 3.3% and 6.6% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 4.5% CAGR.

Global Gallium Arsenide (GaAs) Electronic Devices Market - Key Trends & Drivers Summarized

Why Are Gallium Arsenide (GaAs) Devices Transforming High-Frequency and Optoelectronic Applications?

Gallium Arsenide (GaAs) electronic devices are revolutionizing the landscape of high-frequency electronics and optoelectronics due to their superior electronic properties when compared to traditional silicon-based devices. GaAs, a III-V compound semiconductor, boasts a higher electron mobility and saturation velocity than silicon, enabling devices that operate at much higher frequencies and with greater efficiency. This makes GaAs-based components ideal for applications in microwave frequency communications, radar systems, satellite transceivers, and high-speed data transmission. Unlike silicon, GaAs also has a direct bandgap, which makes it extremely efficient in emitting and absorbing light-an essential trait for laser diodes, photodetectors, and solar cells. In the field of wireless communication, GaAs power amplifiers and low-noise amplifiers are vital for ensuring signal integrity in smartphones, Wi-Fi routers, and base stations, especially under high-frequency modulation schemes like 5G. Moreover, the material's resistance to radiation and thermal degradation has made it a preferred choice in space-grade electronics and military-grade RF systems. As the demand for smaller, faster, and more energy-efficient components continues to rise, GaAs is proving indispensable in enabling technologies that silicon cannot efficiently support. The industry’s shift toward higher-frequency, higher-performance electronics places GaAs at the center of innovation for modern communication and photonic systems.

How Are End-Use Markets Driving Demand for GaAs Devices Across Multiple Sectors?

The demand for Gallium Arsenide (GaAs) electronic devices is being driven by a diverse array of end-use markets, each leveraging the material's unique attributes to fulfill performance-critical requirements. In telecommunications, GaAs-based RF amplifiers and transistors play a foundational role in mobile networks, from legacy 3G and 4G systems to cutting-edge 5G and future 6G infrastructure, where low-noise amplification and high linearity are essential. Consumer electronics also represent a significant market segment, as smartphones, tablets, and wearables increasingly rely on GaAs amplifiers and switches to improve wireless communication range and efficiency. In aerospace and defense, the robustness of GaAs devices in harsh environments has led to their widespread use in avionics, satellite communications, radar arrays, and electronic warfare systems. The automotive industry is also beginning to adopt GaAs components in advanced driver-assistance systems (ADAS) and vehicle-to-everything (V2X) communication technologies. In the realm of renewable energy, high-efficiency GaAs solar cells are utilized in space-grade photovoltaics and are being explored for use in terrestrial concentrator photovoltaic (CPV) systems. Meanwhile, industrial and scientific instrumentation, such as high-resolution spectroscopy, LiDAR, and medical imaging equipment, rely on the fast response times and sensitivity of GaAs photonic devices. This broadening application base is not only driving volume demand but also encouraging innovation in device architecture and manufacturing, ensuring GaAs maintains its position as a key enabler in next-generation electronics.

What Technological Advancements Are Enhancing the Performance and Fabrication of GaAs Devices?

Technological advancements in material synthesis, device engineering, and semiconductor fabrication are playing a pivotal role in enhancing the performance, reliability, and scalability of GaAs electronic devices. One of the most significant developments has been the refinement of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which allow for the growth of ultra-pure and defect-free GaAs layers with precise control over doping profiles and heterostructure formation. These techniques enable the production of advanced device architectures such as high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), and quantum well lasers, all of which benefit from GaAs’s superior carrier dynamics. Efforts to integrate GaAs with other compound semiconductors, such as indium phosphide (InP) and aluminum gallium arsenide (AlGaAs), are yielding heterostructures that push the boundaries of speed, power, and optical efficiency. At the device level, innovations in thermal management, such as the incorporation of high-conductivity substrates and advanced packaging solutions, are extending the reliability of GaAs devices under high-power or high-temperature conditions. Additionally, progress in lithography and etching processes is enabling finer feature sizes and more compact layouts, essential for miniaturized electronic systems. On the system integration front, hybrid packaging with silicon and GaN technologies is being explored to combine the strengths of different semiconductors for multifunctional performance. These technological strides are not only improving the cost-effectiveness and versatility of GaAs devices but also paving the way for their broader adoption in emerging markets such as terahertz communications, quantum computing, and photonic integration.

What Market Dynamics Are Driving the Growth of the GaAs Electronic Devices Industry?

The global market for GaAs electronic devices is being propelled by a complex interplay of economic, technological, and strategic factors that reflect the evolving demands of modern digital infrastructure. The rapid expansion of 5G networks, with their reliance on high-frequency spectrum and massive MIMO technologies, is significantly boosting the need for high-performance GaAs RF components in both base stations and mobile devices. The proliferation of connected devices, smart sensors, and IoT systems across industrial, healthcare, and consumer domains further amplifies the requirement for efficient, compact, and reliable high-frequency electronics. Additionally, geopolitical dynamics and efforts to secure domestic semiconductor supply chains are motivating increased investments in GaAs foundries and R&D, particularly in the U.S., Europe, China, and South Korea. Government support for indigenous chip manufacturing and defense-grade electronics is also contributing to the growth trajectory of GaAs technology. Market consolidation and strategic partnerships among leading GaAs wafer suppliers, fabless design houses, and vertically integrated manufacturers are improving scalability and accelerating innovation. Meanwhile, growing environmental and energy-efficiency concerns are prompting industries to shift toward devices that offer higher performance per watt-a domain where GaAs excels, especially in RF front-end modules and power amplifiers. Emerging applications in AR/VR, high-speed optical interconnects, and next-generation LiDAR systems are further expanding the market landscape. With global bandwidth demand surging and performance expectations rising, the GaAs electronic devices market is well-positioned for sustained expansion as it continues to deliver critical capabilities that other semiconductor materials cannot easily replicate.

SCOPE OF STUDY:

The report analyzes the Gallium Arsenide (GaAs) Electronic Devices market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Type (LEC Grown GaAs Devices, VGF Grown GaAs Devices); Application (Mobile Devices, Wireless Communications, Other Applications)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

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TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

III. MARKET ANALYSIS

IV. COMPETITION

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