ÁúÈ­°¥·ý(GaN) ÆÄ¿ö µð¹ÙÀ̽º ½ÃÀå ºÐ¼®°ú ¿¹Ãø(-2033³â) : À¯Çü, Á¦Ç°, ¼­ºñ½º, ±â¼ú, ÄÄÆ÷³ÍÆ®, ¿ëµµ, µð¹ÙÀ̽º, ÇÁ·Î¼¼½º, ÃÖÁ¾»ç¿ëÀÚ, ±â´Éº°
Gallium Nitride (GaN) Power Devices Market Analysis and Forecast to 2033: Type, Product, Services, Technology, Component, Application, Device, Process, End User, Functionality
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ÁúÈ­°¥·ý(GaN) ÆÄ¿ö µð¹ÙÀ̽º ½ÃÀåÀº 2024³â 22¾ï ´Þ·¯¿¡¼­ 2034³â¿¡´Â 105¾ï ´Þ·¯·Î È®´ëÇϸç, CAGRÀº ¾à 16.8%¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

ÁúÈ­°¥·ý(GaN) Àü·Â ¼ÒÀÚ ½ÃÀåÀº GaN ±â¹Ý Àü·Â ¼Ö·ç¼ÇÀÇ °³¹ß ¹× ¹èÆ÷¿¡ ƯȭµÈ ºÐ¾ß¸¦ Æ÷°ýÇÕ´Ï´Ù. ¶Ù¾î³­ È¿À²°ú °íÁÖÆÄ ¼º´ÉÀ¸·Î À¯¸íÇÑ ÀÌ ¼ÒÀÚ´Â Àü·Â º¯È¯ ¹× RF ÁõÆø±â¿¡¼­ Àü±âÀÚµ¿Â÷ ¹× Àç»ý ¿¡³ÊÁö ½Ã½ºÅÛ¿¡ À̸£±â±îÁö ´Ù¾çÇÑ ¿ëµµ¿¡¼­ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» Çϰí ÀÖ½À´Ï´Ù. ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº ÀüÀÚÁ¦Ç°¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡, ¼ÒÇüÈ­ Ãß¼¼, Áö¼Ó°¡´ÉÇÑ ¿¡³ÊÁö ¼Ö·ç¼ÇÀ¸·ÎÀÇ ÀüȯÀÌ ½ÃÀåÀ» ÁÖµµÇϰí ÀÖÀ¸¸ç, GaN Àü·Â ¼ÒÀÚ´Â Çö´ë ±â¼ú ¹ßÀüÀÇ ÇÙ½É ÄÄÆ÷³ÍÆ®·Î ÀÚ¸®¸Å±èÇϰí ÀÖ½À´Ï´Ù.

ÁúÈ­°¥·ý(GaN) Àü·Â ¼ÒÀÚ ½ÃÀåÀº ƯÈ÷ °¡Àü ¹× ÀÚµ¿Â÷ ºÐ¾ß¿¡¼­ °­·ÂÇÑ ¼ºÀå¼¼¸¦ º¸À̰í ÀÖ½À´Ï´Ù. È¿À²ÀûÀÎ Àü·Â º¯È¯¿¡ ´ëÇÑ ¼ö¿ä¿¡ ÈûÀÔ¾î ¼ÒºñÀÚ ÀüÀÚ±â±â ºÐ¾ß°¡ °¡Àå ³ôÀº ¼ºÀå¼¼¸¦ º¸À̰í ÀÖ½À´Ï´Ù. Àü±âÀÚµ¿Â÷·ÎÀÇ ÀüȯÀÌ °¡¼ÓÈ­µÇ°í ÀÖ´Â ÀÚµ¿Â÷ ¿ëµµ´Â µÎ ¹øÂ°·Î ³ôÀº ¼ºÀå¼¼¸¦ º¸À̰í ÀÖ½À´Ï´Ù. Áö¿ªº°·Î´Â ºÏ¹Ì°¡ ±â¼ú ¹ßÀü°ú ¿¬±¸°³¹ß¿¡ ´ëÇÑ ¸·´ëÇÑ ÅõÀÚ·Î ¼±µÎ¸¦ ´Þ¸®°í ÀÖ½À´Ï´Ù. À¯·´Àº ¾ö°ÝÇÑ ¿¡³ÊÁö È¿À² ±ÔÁ¦¿Í ÀÚµ¿Â÷ »ê¾÷ÀÇ Àü±â À̵¿¼º Àüȯ¿¡ ÈûÀÔ¾î ±Ù¼ÒÇÑ Â÷ÀÌ·Î ±× µÚ¸¦ ÀÕ°í ÀÖ½À´Ï´Ù.

¾Æ½Ã¾ÆÅÂÆò¾ç¿¡¼­´Â ±Þ¼ÓÇÑ »ê¾÷È­¿Í °­·ÂÇÑ ÀüÀÚÁ¦Ç° Á¦Á¶°ÅÁ¡¿¡ ÈûÀÔ¾î Áß±¹, ÀϺ» µîÀÇ ±¹°¡µéÀÌ ¼±µÎ¸¦ ´Þ¸®°í ÀÖ½À´Ï´Ù. Åë½Å ¹× Àç»ý¿¡³ÊÁö ºÐ¾ß¿¡¼­ GaN Àü·Â ¼ÒÀÚÀÇ Ã¤ÅÃÀÌ Áõ°¡Çϸ鼭 ½ÃÀå ¼ºÀåÀ» ´õ¿í ÃËÁøÇϰí ÀÖ½À´Ï´Ù. °íÈ¿À² ¹× ¼ÒÇüÈ­¿Í °°Àº GaN ¼ÒÀÚÀÇ Çâ»óµÈ ¼º´É Ư¼ºÀº ´Ù¾çÇÑ »ê¾÷¿¡¼­ Áö¼ÓÀûÀ¸·Î Å« °ü½ÉÀ» ¹Þ°í ÀÖÀ¸¸ç, ÀÌ´Â ÀÌÇØ°ü°èÀڵ鿡°Ô À¯¸®ÇÑ ºñÁî´Ï½º ±âȸ¸¦ Á¦°øÇÕ´Ï´Ù.

2023³â ÁúÈ­°¥·ý(GaN) ÆÄ¿ö µð¹ÙÀ̽º ½ÃÀå ±Ô¸ð´Â 3¾ï 2,000¸¸ °³·Î ÃßÁ¤µÇ¸ç, 2033³â¿¡´Â 5¾ï 6,000¸¸ °³¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. °¡Àü ºÐ¾ß°¡ 45%, ÀÚµ¿Â÷ ºÐ¾ß°¡ 30%, Åë½Å ºÐ¾ß°¡ 25%ÀÇ Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. CE(Consumer Electronics) ºÐ¾ß´Â È¿À²ÀûÀÎ Àü¿ø ¼Ö·ç¼Ç°ú ±Þ¼Ó ÃæÀü ±â´É¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡·Î ÀÌÀÍÀ» ¾ò°í ÀÖ½À´Ï´Ù. ÀÌ ½ÃÀåÀÇ ÁÖ¿ä ¾÷ü·Î´Â Infineon Technologies, Efficient Power Conversion Corporation, GaN Systems µîÀÌ ÀÖÀ¸¸ç, °¢ ¾÷ü´Â Å« ½ÃÀå Á¡À¯À²À» À¯ÁöÇϰí ÀÖ½À´Ï´Ù. ÀÌµé ±â¾÷ÀÇ Àü·«Àº ±â¼ú Çõ½Å°ú ´Ù¾çÇÑ ºÐ¾ß·ÎÀÇ Á¦Ç° Àû¿ë È®´ë¿¡ ÃÊÁ¡À» ¸ÂÃß¾ú½À´Ï´Ù.

°æÀï ±¸µµ´Â ±â¼ú ¹ßÀü°ú Àü·«Àû ÆÄÆ®³Ê½ÊÀ» ÅëÇØ Çü¼ºµÇ°í ÀÖ½À´Ï´Ù. ¿¡³ÊÁö È¿À²¿¡ °üÇÑ À¯·´¿¬ÇÕ(EU) Áöħ°ú °°Àº ±ÔÁ¦ ÇÁ·¹ÀÓ¿öÅ©´Â ÄÄÇöóÀ̾𽺠±âÁØÀ» ¼³Á¤ÇÔÀ¸·Î½á ½ÃÀå µ¿Çâ¿¡ Å« ¿µÇâÀ» ¹ÌĨ´Ï´Ù. R&D¿¡ ´ëÇÑ ÅõÀÚ´Â ÇʼöÀûÀ̸ç, 2033³â±îÁö R&D ºñ¿ëÀÌ 10% Áõ°¡ÇÏ¿© GaN ±â¼ú Çõ½ÅÀ» ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ½ÃÀå Àü¸ÁÀº ¿©ÀüÈ÷ ³«°üÀûÀ̸ç, 5G ÀÎÇÁ¶ó ¹× IoT Àåºñ¿Í °°Àº ½ÅÈï ¿ëµµ¿¡ ºñÁî´Ï½º ±âȸ°¡ ÀÖ½À´Ï´Ù. ±×·¯³ª Á¦Á¶ ºñ¿ëÀÇ »ó½Â°ú ½Ç¸®ÄÜ ±â¹Ý ´ëüǰ°úÀÇ °æÀïÀ̶ó´Â °úÁ¦´Â ¿©ÀüÈ÷ ³²¾ÆÀÖ½À´Ï´Ù. Àü·Â °ü¸® ¼Ö·ç¼Ç¿¡ AI¸¦ ÅëÇÕÇÏ¸é »õ·Î¿î ¼ºÀåÀÇ ±æÀ» ¿­ ¼ö ÀÖÀ» °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

¾Æ½Ã¾ÆÅÂÆò¾çÀº ÁúÈ­°¥·ý(GaN) ÆÄ¿ö µð¹ÙÀ̽º ½ÃÀåÀ» µ¶Á¡Çϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ¿ìÀ§´Â Áß±¹, ÀϺ», Çѱ¹°ú °°Àº ±¹°¡µéÀÇ ±Þ¼ÓÇÑ »ê¾÷È­¿Í ±â¼ú ¹ßÀüÀ¸·Î ÀÎÇÑ °ÍÀÔ´Ï´Ù. ÀÌµé ±¹°¡´Â Åë½Å, ÀÚµ¿Â÷, °¡ÀüÁ¦Ç°¿¡ Àû¿ëÇϱâ À§ÇØ GaN ±â¼ú¿¡ ¸¹Àº ÅõÀÚ¸¦ Çϰí ÀÖ½À´Ï´Ù. ÀÌ Áö¿ªÀÇ ÅºÅºÇÑ ¹ÝµµÃ¼ Á¦Á¶ ÀÎÇÁ¶ó´Â ½ÃÀå¿¡¼­ÀÇ ÀÔÁö¸¦ ´õ¿í °ø°íÈ÷ Çϰí ÀÖ½À´Ï´Ù.

ºÏ¹Ì´Â GaN Àü·Â ¼ÒÀÚ ½ÃÀå¿¡¼­ µÎ ¹øÂ°·Î Áß¿äÇÑ Áö¿ªÀÔ´Ï´Ù. ¹Ì±¹ÀÌ ¿¬±¸°³¹ß¿¡ ´ëÇÑ ¸·´ëÇÑ ÅõÀÚ·Î ½ÃÀåÀ» ÁÖµµÇϰí ÀÖ½À´Ï´Ù. Àü±âÀÚµ¿Â÷ ¹× Àç»ý¿¡³ÊÁö ½Ã½ºÅÛ¿¡¼­ È¿À²ÀûÀÎ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º¿¡ ´ëÇÑ ¼ö¿ä°¡ ½ÃÀå ¼ºÀåÀ» ÁÖµµÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ ÁÖ¿ä ½ÃÀå ±â¾÷ÀÇ Á¸Àç´Â ±â¼ú Çõ½Å°ú äÅÃÀ» °¡¼ÓÈ­Çϰí ÀÖ½À´Ï´Ù.

À¯·´µµ GaN Àü·Â ¼ÒÀÚ ½ÃÀå¿¡¼­ Áß¿äÇÑ ¿ªÇÒÀ» Çϰí ÀÖ½À´Ï´Ù. µ¶Àϰú ¿µ±¹°ú °°Àº ±¹°¡µéÀº Àç»ý ¿¡³ÊÁö¿Í Àü±â ¸ðºô¸®Æ¼¿¡ ÁßÁ¡À» µÎ°í ÀÖÀ¸¹Ç·Î ÃÖÀü¼±¿¡ À§Ä¡Çϰí ÀÖ½À´Ï´Ù. À¯·´¿¬ÇÕ(EU)ÀÇ ¾ö°ÝÇÑ ¿¡³ÊÁö È¿À² ±ÔÁ¦´Â GaN ±â¼ú äÅÃÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ Áö¼Ó°¡´É¼º°ú Çõ½Å¿¡ ´ëÇÑ °ü½ÉÀº À¯·´ ½ÃÀå¿¡¼­ÀÇ Á¸Àç°¨À» ³ôÀ̰í ÀÖ½À´Ï´Ù.

Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«Àº GaN Àü·Â ¼ÒÀÚ ½ÃÀå¿¡¼­ Á¡Â÷ ºÎ»óÇϰí ÀÖ½À´Ï´Ù. ÀÎÇÁ¶ó¿Í Åë½Å¿¡ ´ëÇÑ ÅõÀÚ°¡ ¼ºÀåÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. ¾Æ¶ø¿¡¹Ì¸®Æ®¿Í »ç¿ìµð¾Æ¶óºñ¾Æ°¡ ÁÖ¿ä ±â¿©±¹ÀÔ´Ï´Ù. ½º¸¶Æ® ½ÃƼ ÇÁ·ÎÁ§Æ®¿Í Àç»ý¿¡³ÊÁö¿¡ ´ëÇÑ ³ë·ÂÀÌ ½ÃÀå È®´ë¸¦ Áö¿øÇϰí ÀÖ½À´Ï´Ù.

¶óƾ¾Æ¸Þ¸®Ä«´Â ´À¸®Áö¸¸ GaN ÆÄ¿ö µð¹ÙÀ̽º ½ÃÀåÀÇ ÀáÀç·ÂÀ» º¸¿©ÁÖ°í ÀÖ½À´Ï´Ù. ºê¶óÁú°ú ¸ß½ÃÄÚ°¡ ÁÖµµÇϰí ÀÖ½À´Ï´Ù. ÀÌ Áö¿ªÀÇ °¡Àü »ê¾÷ÀÇ ¼ºÀå°ú ¿¡³ÊÁö È¿À²ÀûÀÎ ¼Ö·ç¼Ç¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡°¡ ÁÖ¿ä ¿øµ¿·ÂÀÌ µÇ°í ÀÖ½À´Ï´Ù. ±×·¯³ª °æÁ¦ÀûÀÎ ¹®Á¦¿Í Á¦ÇÑµÈ ÀÎÇÁ¶ó´Â ºü¸¥ ½ÃÀå ¼ºÀå¿¡ °É¸²µ¹·Î ÀÛ¿ëÇϰí ÀÖ½À´Ï´Ù.

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Á¦7Àå ÁúÈ­°¥·ý(GaN) ÆÄ¿ö µð¹ÙÀ̽º ½ÃÀå : À¯Çüº°

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The Gallium Nitride (GaN) Power Devices Market is anticipated to expand from $2.2 billion in 2024 to $10.5 billion by 2034, with a CAGR of approximately 16.8%.

The Gallium Nitride (GaN) Power Devices Market encompasses the sector dedicated to the development and deployment of GaN-based power solutions. These devices, known for their superior efficiency and high-frequency performance, are pivotal in applications ranging from power conversion and RF amplifiers to electric vehicles and renewable energy systems. The market is driven by the escalating demand for energy-efficient electronics, miniaturization trends, and the transition towards sustainable energy solutions, positioning GaN power devices as critical components in modern technological advancements.

The Gallium Nitride (GaN) Power Devices Market is experiencing robust growth, particularly within the consumer electronics and automotive sectors. Consumer electronics, driven by the demand for efficient power conversion, stands as the top-performing segment. Automotive applications, with the shift towards electric vehicles, emerge as the second-highest performing segment. Within the regional landscape, North America leads, fueled by technological advancements and substantial investments in research and development. Europe follows closely, supported by stringent energy efficiency regulations and the automotive industry's transition to electric mobility.

In the Asia-Pacific region, countries such as China and Japan are at the forefront, driven by rapid industrialization and a strong electronics manufacturing base. The increasing adoption of GaN power devices in telecommunications and renewable energy sectors further propels market growth. Enhanced performance characteristics of GaN devices, such as higher efficiency and smaller form factors, continue to attract significant interest across various industries, promising lucrative opportunities for stakeholders.

In 2023, the Gallium Nitride (GaN) Power Devices Market's volume was estimated at 320 million units, with expectations to reach 560 million units by 2033. The consumer electronics segment dominates the market with a 45% share, followed by automotive at 30%, and telecommunications at 25%. The consumer electronics sector benefits from the rising demand for efficient power solutions and fast-charging capabilities. Key players in this market include Infineon Technologies, Efficient Power Conversion Corporation, and GaN Systems, each maintaining substantial market shares. Their strategies focus on innovation and expanding product applications across various sectors.

Competitive dynamics are shaped by technological advancements and strategic partnerships. Regulatory frameworks, such as the European Union's directives on energy efficiency, significantly influence market trends by setting compliance standards. Investment in R&D is essential, with a projected 10% rise in R&D expenditure by 2033, fostering innovation in GaN technologies. The market outlook remains optimistic, with opportunities in emerging applications like 5G infrastructure and IoT devices. However, challenges like high production costs and competition from silicon-based alternatives persist. The integration of AI in power management solutions is anticipated to open new growth avenues.

The Asia Pacific region dominates the Gallium Nitride (GaN) power devices market. This dominance is driven by rapid industrialization and technological advancements in countries like China, Japan, and South Korea. These nations are investing heavily in GaN technology for applications in telecommunications, automotive, and consumer electronics. The region's robust semiconductor manufacturing infrastructure further enhances its market position.

North America ranks as the second most significant region in the GaN power devices market. The United States leads with substantial investments in research and development. The demand for efficient power electronics in electric vehicles and renewable energy systems fuels market growth. Additionally, the presence of key market players accelerates innovation and adoption.

Europe also plays a crucial role in the GaN power devices market. Countries like Germany and the United Kingdom are at the forefront due to their focus on renewable energy and electric mobility. The European Union's stringent regulations on energy efficiency drive the adoption of GaN technology. This focus on sustainability and innovation strengthens Europe's market presence.

The Middle East and Africa region is gradually emerging in the GaN power devices market. Investments in infrastructure and telecommunications are propelling growth. Countries like the United Arab Emirates and Saudi Arabia are key contributors. Their focus on smart city projects and renewable energy initiatives supports the market's expansion.

Latin America shows potential in the GaN power devices market, albeit at a slower pace. Brazil and Mexico are leading the charge. The region's growing consumer electronics industry and increasing demand for energy-efficient solutions are key drivers. However, economic challenges and limited infrastructure pose hurdles to rapid market growth.

Key Companies

Efficient Power Conversion, Ga N Systems, Navitas Semiconductor, Transphorm, Exagan, Vis IC Technologies, Innoscience, Qorvo, Microsemi, Dialog Semiconductor, Texas Instruments, Infineon Technologies, Panasonic Corporation, Nexperia, Rohm Semiconductor, Wolfspeed, Power Integrations, Sumitomo Electric, Ampleon, Analog Devices

Sources

U.S. Department of Energy, European Commission - Directorate-General for Energy, Japan Ministry of Economy, Trade and Industry (METI), International Energy Agency (IEA), National Renewable Energy Laboratory (NREL), IEEE International Electron Devices Meeting (IEDM), IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Applied Power Electronics Conference and Exposition (APEC), Compound Semiconductor Week (CSW), International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), U.S. National Institute of Standards and Technology (NIST), European Space Agency (ESA), Institute of Electrical and Electronics Engineers (IEEE), University of California, Berkeley - Power Electronics Group, Massachusetts Institute of Technology (MIT) - Microsystems Technology Laboratories, University of Cambridge - Department of Engineering, Fraunhofer Institute for Applied Solid State Physics IAF, European Union Agency for the Cooperation of Energy Regulators (ACER), Semiconductor Industry Association (SIA), International Energy Forum (IEF)

Research Scope

Our research scope provides comprehensive market data, insights, and analysis across a variety of critical areas. We cover Local Market Analysis, assessing consumer demographics, purchasing behaviors, and market size within specific regions to identify growth opportunities. Our Local Competition Review offers a detailed evaluation of competitors, including their strengths, weaknesses, and market positioning. We also conduct Local Regulatory Reviews to ensure businesses comply with relevant laws and regulations. Industry Analysis provides an in-depth look at market dynamics, key players, and trends. Additionally, we offer Cross-Segmental Analysis to identify synergies between different market segments, as well as Production-Consumption and Demand-Supply Analysis to optimize supply chain efficiency. Our Import-Export Analysis helps businesses navigate global trade environments by evaluating trade flows and policies. These insights empower clients to make informed strategic decisions, mitigate risks, and capitalize on market opportunities.

TABLE OF CONTENTS

1: Gallium Nitride (GaN) Power Devices Market Overview

2: Executive Summary

3: Premium Insights on the Market

4: Gallium Nitride (GaN) Power Devices Market Outlook

5: Gallium Nitride (GaN) Power Devices Market Strategy

6: Gallium Nitride (GaN) Power Devices Market Size

7: Gallium Nitride (GaN) Power Devices Market, by Type

8: Gallium Nitride (GaN) Power Devices Market, by Product

9: Gallium Nitride (GaN) Power Devices Market, by Services

10: Gallium Nitride (GaN) Power Devices Market, by Technology

11: Gallium Nitride (GaN) Power Devices Market, by Component

12: Gallium Nitride (GaN) Power Devices Market, by Application

13: Gallium Nitride (GaN) Power Devices Market, by Device

14: Gallium Nitride (GaN) Power Devices Market, by Process

15: Gallium Nitride (GaN) Power Devices Market, by End User

16: Gallium Nitride (GaN) Power Devices Market, by Functionality

17: Gallium Nitride (GaN) Power Devices Market, by Region

18: Competitive Landscape

19: Company Profiles

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