GaN RF 반도체 소자 시장 규모, 점유율, 성장 분석, 디바이스 유형별, 용도별, 주파수 범위별, 기술별, 지역별 - 산업 예측(2025-2032년)
Gan RF Devices Market Size, Share, and Growth Analysis, By Device Type (High Electron Mobility Transistors, Diodes), By Application, By Frequency Range, By Technology, By Region - Industry Forecast 2025-2032
GaN RF 반도체 소자 세계 시장 규모는 2023년에 18억 달러로 평가되었고, 예측 기간(2025-2032년) CAGR은 18.5%로, 2024년 21억 3,000만 달러에서 2032년에는 82억 9,000만 달러로 성장할 전망입니다.
세계 GaN RF 반도체 소자 시장은 에너지 효율적인 전력 솔루션에 대한 수요 증가와 지속 가능한 기술로의 전환으로 인해 크게 성장하고 있으며, GaN 반도체 디바이스는 높은 전력 효율과 컴팩트한 크기로 유명해 전원 공급 장치, 인버터, 전기자동차 전력 손실과 방열을 최소화하면서 에너지 성능을 최적화하는 시스템에서 사용이 증가하고 있습니다. 또한, 5G 기술의 등장은 통신 분야에서 GaN 디바이스의 채택을 촉진하고 있습니다. 높은 주파수와 전력 밀도로 작동하는 GaN의 능력은 기지국 및 무선 통신 시스템과 같은 5G 인프라를 강화하는 데 이상적이며, 5G 네트워크가 전 세계적으로 확대됨에 따라 GaN RF 반도체 소자에 대한 수요가 급증하여 시장 성장과 지속적인 기술 혁신에 박차를 가하고 있습니다.
목차
서론
조사 방법
- 정보 조달
- 2차와 1차 데이터 방법
- 시장 규모 예측
- 시장 전제조건과 제한
주요 요약
- 세계 시장 전망
- 공급과 수요 동향 분석
- 부문별 기회 분석
시장 역학과 전망
- 시장 개요
- 시장 규모
- 시장 역학
- Porter의 Five Forces 분석
주요 시장 인사이트
- 중요 성공 요인
- 경쟁 정도
- 주요 투자 기회
- 시장 생태계
- 시장의 매력 지수(2024년)
- PESTEL 분석
- 거시경제 지표
- 밸류체인 분석
- 가격 분석
- 규제 상황
- 이용 사례
- 기술 분석
GaN RF 반도체 소자 시장 규모 : 디바이스 유형별&CAGR(2025-2032년)
- 시장 개요
- 고전자 이동도 트랜지스터(HEMT)
- 다이오드
- 집적회로(IC)
- 기타
GaN RF 반도체 소자 시장 규모 : 용도별&CAGR(2025-2032년)
- 시장 개요
- 방위 및 항공우주
- 통신
- 자동차
- 가전제품
- 산업
GaN RF 반도체 소자 시장 규모 : 주파수 범위별&CAGR(2025-2032년)
- 시장 개요
- 6GHz 이하
- 6GHz-20GHz
- 20GHz 이상
GaN RF 반도체 소자 시장 규모 : 기술별&CAGR(2025-2032년)
- 시장 개요
- GaN-on-Silicon Carbide (SiC)
- GaN-on-Silicon (Si)
- GaN-on-Diamond
- 기타
GaN RF 반도체 소자 시장 규모&CAGR(2025-2032년)
- 북미
- 유럽
- 아시아태평양
- 라틴아메리카
- 중동 및 아프리카
- GCC 국가
- 남아프리카공화국
- 기타 중동 및 아프리카
경쟁 정보
- 주요 5개사 비교
- 주요 기업의 시장 포지셔닝(2024년)
- 주요 시장 기업이 채택한 전략
- 최근 시장 동향
- 기업의 시장 점유율 분석(2024년)
- 주요 기업 개요
- 기업 상세
- 제품 포트폴리오 분석
- 기업 부문별 점유율 분석
- 매출 전년대비 비교(2022-2024년)
주요 기업 개요
- Cree, Inc.(미국)
- Qorvo, Inc.(미국)
- Skyworks Solutions, Inc.(미국)
- Infineon Technologies AG(독일)
- MACOM Technology Solutions Holdings, Inc.(미국)
- Mitsubishi Electric Corporation(일본)
- STMicroelectronics N.V.(스위스)
- Sumitomo Electric Industries, Ltd.(일본)
- Wolfspeed, Inc.(미국)
- Panasonic Corporation(일본)
- Analog Devices, Inc.(미국)
- ON Semiconductor Corporation(미국)
- TSMC(Taiwan Semiconductor Manufacturing Company)(대만)
- Toshiba Corporation(일본)
- Renesas Electronics Corporation(일본)
- Broadcom Inc.(미국)
- VPT, Inc.(미국)
결론과 제안
LSH
Global Gan RF Devices Market size was valued at USD 1.8 billion in 2023 and is poised to grow from USD 2.13 billion in 2024 to USD 8.29 billion by 2032, growing at a CAGR of 18.5% during the forecast period (2025-2032).
The global GaN RF devices market is experiencing significant growth driven by the rising demand for energy-efficient power solutions and the transition towards sustainable technologies. GaN semiconductor devices, renowned for their high-power efficiency and compact size, are increasingly utilized in power supplies, inverters, and electric vehicle systems, optimizing energy performance while minimizing power loss and heat dissipation. Additionally, the advent of 5G technology is catalyzing the adoption of GaN devices within the telecommunications sector. Their ability to operate at high frequencies and power densities makes GaN ideal for enhancing 5G infrastructure, including base stations and wireless communication systems. As the rollout of 5G networks expands globally, the demand for GaN RF devices is surging, fueling market growth and ongoing innovation.
Top-down and bottom-up approaches were used to estimate and validate the size of the Global Gan RF Devices market and to estimate the size of various other dependent submarkets. The research methodology used to estimate the market size includes the following details: The key players in the market were identified through secondary research, and their market shares in the respective regions were determined through primary and secondary research. This entire procedure includes the study of the annual and financial reports of the top market players and extensive interviews for key insights from industry leaders such as CEOs, VPs, directors, and marketing executives. All percentage shares split, and breakdowns were determined using secondary sources and verified through Primary sources. All possible parameters that affect the markets covered in this research study have been accounted for, viewed in extensive detail, verified through primary research, and analyzed to get the final quantitative and qualitative data.
Global Gan RF Devices Market Segments Analysis
Global Gan RF Devices Market is segmented by Device Type, Application, Frequency Range, Technology and region. Based on Device Type, the market is segmented into High Electron Mobility Transistors (HEMT), Diodes, Integrated Circuits (ICs) and Others. Based on Application, the market is segmented into Defense & Aerospace, Telecommunications, Automotive, Consumer Electronics and Industrial. Based on Frequency Range, the market is segmented into Below 6 GHz, 6 GHz - 20 GHz and Above 20 GHz. Based on Technology, the market is segmented into GaN-on-Silicon Carbide (SiC), GaN-on-Silicon (Si), GaN-on-Diamond and Others. Based on region, the market is segmented into North America, Europe, Asia Pacific, Latin America and Middle East & Africa.
Driver of the Global Gan RF Devices Market
The worldwide expansion of 5G networks stands out as a significant catalyst for the growth of the global GaN RF devices market. Gallium Nitride (GaN) devices exhibit exceptional power efficiency and operate at higher frequencies, making them essential components in 5G base stations, which facilitate quicker data transmission and enhanced connectivity. The increasing demand for 5G infrastructure around the globe continuously propels the market forward, highlighting the crucial role that GaN RF devices play in accommodating the evolving telecommunications landscape. As 5G technology continues to proliferate, the need for efficient and effective RF solutions becomes increasingly critical.
Restraints in the Global Gan RF Devices Market
The Global GaN RF Devices market faces certain restraints primarily related to concerns regarding the long-term reliability and performance of these devices in extreme environments. Despite their high efficiency, potential issues such as device degradation under elevated temperatures and power levels raise significant questions about their durability and reliability. This becomes particularly critical in mission-critical sectors like defense and aerospace, where consistent performance is essential. As a result, the apprehension surrounding the reliability of GaN devices may hinder their widespread adoption in applications where uncompromising performance is mandatory, thus limiting market growth and potential opportunities.
Market Trends of the Global Gan RF Devices Market
The global GaN RF devices market is poised for significant growth driven by the accelerated deployment of 5G networks and the anticipation of 6G technologies. As telecommunications infrastructure evolves to meet demand for higher data rates and lower latency, Gallium Nitride (GaN) devices are becoming essential due to their superior power efficiency and capability to operate effectively at high frequencies. This transition not only enhances communication speed and reliability but also propels innovations in various sectors, including automotive, aerospace, and consumer electronics. As a result, the market is witnessing increased investments and strategic collaborations focused on leveraging GaN technology for next-generation connectivity solutions.
Table of Contents
Introduction
- Objectives of the Study
- Scope of the Report
- Definitions
Research Methodology
- Information Procurement
- Secondary & Primary Data Methods
- Market Size Estimation
- Market Assumptions & Limitations
Executive Summary
- Global Market Outlook
- Supply & Demand Trend Analysis
- Segmental Opportunity Analysis
Market Dynamics & Outlook
- Market Overview
- Market Size
- Market Dynamics
- Drivers & Opportunities
- Restraints & Challenges
- Porters Analysis
- Competitive rivalry
- Threat of substitute
- Bargaining power of buyers
- Threat of new entrants
- Bargaining power of suppliers
Key Market Insights
- Key Success Factors
- Degree of Competition
- Top Investment Pockets
- Market Ecosystem
- Market Attractiveness Index, 2024
- PESTEL Analysis
- Macro-Economic Indicators
- Value Chain Analysis
- Pricing Analysis
- Regulatory Landscape
- Case Studies
- Technological Analysis
Global Gan RF Devices Market Size by Device Type & CAGR (2025-2032)
- Market Overview
- High Electron Mobility Transistors (HEMT)
- Diodes
- Integrated Circuits (ICs)
- Others
Global Gan RF Devices Market Size by Application & CAGR (2025-2032)
- Market Overview
- Defense & Aerospace
- Telecommunications
- Automotive
- Consumer Electronics
- Industrial
Global Gan RF Devices Market Size by Frequency Range & CAGR (2025-2032)
- Market Overview
- Below 6 GHz
- 6 GHz - 20 GHz
- Above 20 GHz
Global Gan RF Devices Market Size by Technology & CAGR (2025-2032)
- Market Overview
- GaN-on-Silicon Carbide (SiC)
- GaN-on-Silicon (Si)
- GaN-on-Diamond
- Others
Global Gan RF Devices Market Size & CAGR (2025-2032)
- North America (Device Type, Application, Frequency Range, Technology)
- Europe (Device Type, Application, Frequency Range, Technology)
- Germany
- Spain
- France
- UK
- Italy
- Rest of Europe
- Asia Pacific (Device Type, Application, Frequency Range, Technology)
- China
- India
- Japan
- South Korea
- Rest of Asia-Pacific
- Latin America (Device Type, Application, Frequency Range, Technology)
- Brazil
- Rest of Latin America
- Middle East & Africa (Device Type, Application, Frequency Range, Technology)
- GCC Countries
- South Africa
- Rest of Middle East & Africa
Competitive Intelligence
- Top 5 Player Comparison
- Market Positioning of Key Players, 2024
- Strategies Adopted by Key Market Players
- Recent Developments in the Market
- Company Market Share Analysis, 2024
- Company Profiles of All Key Players
- Company Details
- Product Portfolio Analysis
- Company's Segmental Share Analysis
- Revenue Y-O-Y Comparison (2022-2024)
Key Company Profiles
- Cree, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Qorvo, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Skyworks Solutions, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Infineon Technologies AG (Germany)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- MACOM Technology Solutions Holdings, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Mitsubishi Electric Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- STMicroelectronics N.V. (Switzerland)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Sumitomo Electric Industries, Ltd. (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Wolfspeed, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Panasonic Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Analog Devices, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- ON Semiconductor Corporation (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- TSMC (Taiwan Semiconductor Manufacturing Company) (Taiwan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Toshiba Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Renesas Electronics Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- Broadcom Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
- VPT, Inc. (U.S.)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Conclusion & Recommendations
