¼¼°èÀÇ ÁúÈ­°¥·ý(GaN) RF µð¹ÙÀ̽º ½ÃÀå
Gallium Nitride (GaN) RF Devices
»óǰÄÚµå : 1561844
¸®¼­Ä¡»ç : Global Industry Analysts, Inc.
¹ßÇàÀÏ : 2024³â 09¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 369 Pages
 ¶óÀ̼±½º & °¡°Ý (ºÎ°¡¼¼ º°µµ)
US $ 5,850 £Ü 8,464,000
PDF (Single User License) help
PDF º¸°í¼­¸¦ 1¸í¸¸ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â °¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 17,550 £Ü 25,393,000
PDF (Global License to Company and its Fully-owned Subsidiaries) help
PDF º¸°í¼­¸¦ µ¿ÀÏ ±â¾÷ÀÇ ¸ðµç ºÐÀÌ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â °¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.


Çѱ۸ñÂ÷

¼¼°èÀÇ ÁúÈ­°¥·ý(GaN) RF µð¹ÙÀ̽º ½ÃÀåÀº 2030³â±îÁö 30¾ï ´Þ·¯¿¡ µµ´Þ

2023³â¿¡ 14¾ï ´Þ·¯·Î Æò°¡µÈ ¼¼°èÀÇ ÁúÈ­°¥·ý(GaN) RF µð¹ÙÀ̽º ½ÃÀåÀº ºÐ¼® ±â°£ 2023³âºÎÅÍ 2030³â±îÁö CAGR 11.4%·Î ¼ºÀåÇÒ Àü¸ÁÀ̸ç, 2030³â¿¡´Â 30¾ï ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ÀÌ º¸°í¼­¿¡¼­ ºÐ¼®ÇÑ ºÎ¹® Áß ÇϳªÀÎ ÅëÇÕ µð¹ÙÀ̽º´Â CAGR 12.0%·Î ¼ºÀåÀ» Áö¼ÓÇϰí, ºÐ¼® ±â°£ÀÌ ³¡³¯ ¶§ 18¾ï ´Þ·¯¿¡ µµ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ÀÌ»ê ¼ÒÀÚ ºÐ¾ßÀÇ ¼ºÀå·üÀº ºÐ¼® ±â°£ µ¿¾È CAGR 10.5%·Î ÃßÁ¤µË´Ï´Ù.

¹Ì±¹ ½ÃÀåÀº 3¾ï 8,800¸¸ ´Þ·¯·Î ÃßÁ¤, Áß±¹Àº CAGR 15.5%·Î ¼ºÀå ¿¹Ãø

¹Ì±¹ÀÇ ÁúÈ­°¥·ý(GaN) RF µð¹ÙÀ̽º ½ÃÀåÀº 2023³â 3¾ï 8,800¸¸ ´Þ·¯·Î Æò°¡µÇ¾ú½À´Ï´Ù. ¼¼°è 2À§ °æÁ¦´ë±¹ÀÎ Áß±¹Àº 2030³â±îÁö 6¾ï 5,620¸¸ ´Þ·¯ ±Ô¸ð¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, ºÐ¼® ±â°£ 2023³âºÎÅÍ 2030³â±îÁö CAGRÀº 15.5%·Î Àü¸ÁµË´Ï´Ù. ±âŸ ÁÖ¸ñÇÒ ¸¸ÇÑ Áö¿ªº° ½ÃÀåÀ¸·Î´Â ÀϺ»°ú ij³ª´Ù°¡ ÀÖÀ¸¸ç, ºÐ¼® ±â°£ Áß CAGRÀº °¢°¢ 8.5%¿Í 9.9%·Î ¿¹ÃøµÇ°í ÀÖ½À´Ï´Ù. À¯·´¿¡¼­´Â µ¶ÀÏÀÌ CAGR ¾à 9.0%·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

¼¼°èÀÇ ÁúÈ­°¥·ý(GaN) RF µð¹ÙÀ̽º ½ÃÀå-ÁÖ¿ä µ¿Çâ ¹× ÃËÁø¿äÀÎ ¿ä¾à

GaN RF µð¹ÙÀ̽º¿Í ±× ½ÃÀå ÀÇÀÇ ÀÌÇØ

ÁúÈ­°¥·ý(GaN) RF µð¹ÙÀ̽º´Â Ź¿ùÇÑ È¿À²°ú ³ôÀº Àü·Â ¹Ðµµ·Î ¾Ë·ÁÁ® ÀÖÀ¸¸ç, ¹«¼± Á֯ļö(RF) ¿ëµµ¿¡¼­ »ç¿ëÇϱ⿡ ÀÌ»óÀûÀÔ´Ï´Ù. ÀÌ·¯ÇÑ ÀåÄ¡´Â ƯÈ÷ °íÁÖÆÄ ¹× °íÀü·Â ȯ°æ¿¡¼­ ±âÁ¸ÀÇ ½Ç¸®ÄÜ ±â¹Ý ±¸¼º ¿ä¼Ò¸¦ ´É°¡ÇÕ´Ï´Ù. GaN RF µð¹ÙÀ̽º´Â ³ôÀº Àü¾Ð°ú ¿Âµµ¿¡¼­ ³ôÀº È¿À²°ú ½Å·Ú¼ºÀ¸·Î ÀÛµ¿ÇÒ ¼ö Àֱ⠶§¹®¿¡ ±º»ç, À§¼º ¹× Åë½Å ¿ëµµ¿¡ ³Î¸® »ç¿ëµË´Ï´Ù.

GaN RF µð¹ÙÀ̽ºÀÇ ´É·ÂÀ» ³ôÀÌ´Â ±â¼ú °³¹ß

GaN RF µð¹ÙÀ̽ºÀÇ ±â¼ú °³¹ßÀº ¼º´ÉÀ» ³ôÀÌ°í ¿ëµµ ¹üÀ§¸¦ ³ÐÈ÷´Â µ¥ ¸Å¿ì Áß¿äÇÕ´Ï´Ù. GaN ¹ÝµµÃ¼ ±â¼úÀÇ Áö¼ÓÀûÀÎ °³¼±Àº ÀüÀÚ À̵¿µµ¸¦ Çâ»ó½ÃŰ°í º¸´Ù ÀÛ°í È¿À²ÀûÀÎ µð¹ÙÀ̽º¸¦ °¡´ÉÇÏ°Ô Çß½À´Ï´Ù. ´Ù¾çÇÑ ½Ã½ºÅÛ¿¡ GaN µð¹ÙÀ̽º¸¦ ÅëÇÕÇÏ´Â °ÍÀº RF ¿ëµµ¿¡¼­ Áß¿äÇÑ ¿ä¼ÒÀÎ ¿­ °ü¸®¿Í µð¹ÙÀ̽ºÀÇ ³»±¸¼ºÀ» Çâ»ó½ÃŰ´Â ÆÐŰ¡ ±â¼úÀÇ ¹ßÀüÀ¸·Î ´õ¿í ÃËÁøµÇ°í ÀÖ½À´Ï´Ù.

ÆÛÁö´Â GaN RF µð¹ÙÀ̽ºÀÇ ¿ëµµ

·¹ÀÌ´õ ½Ã½ºÅÛ, À§¼º Åë½Å ¹× 5G ³×Æ®¿öÅ©¿¡¼­ °í¼º´É RF ±¸¼º¿ä¼Ò ¼ö¿ä¿¡ °ßÀÎÇØ GaN RF µð¹ÙÀ̽ºÀÇ ¿ëµµ´Â ±âÁ¸ ºÐ¾ß¸¦ ³Ñ¾î »ó¿ë Åë½Å ¹× ÀÚµ¿Â÷ »ê¾÷À¸·Î È®´ëµÇ°í ÀÖ½À´Ï´Ù. ÀÚµ¿Â÷ ºÐ¾ß¿¡¼­´Â Ãæµ¹ ȸÇÇ ½Ã½ºÅÛ ¹× ±âŸ ·¹ÀÌ´õ ¿ëµµ¿¡¼­ GaN RF µð¹ÙÀ̽ºÀÇ »ç¿ëÀÌ Áõ°¡Çϰí ÀÖÀ¸¸ç, ³ôÀº Ãâ·Â°ú È¿À²Àº ½Ã½ºÅÛ ¼º´ÉÀ» Å©°Ô Çâ»ó½Ãŵ´Ï´Ù.

GaN RF µð¹ÙÀ̽º ½ÃÀå ¼ºÀåÀÇ ¿øµ¿·ÂÀº?

GaN RF µð¹ÙÀ̽º ½ÃÀåÀÇ ¼ºÀåÀº ¿©·¯ ¿äÀο¡ ÀÇÇØ ¾ß±âµË´Ï´Ù. ƯÈ÷ °íÃâ·Â ¹× °íÁÖÆÄ ÄÄÆ÷³ÍÆ®¸¦ ÇÊ¿ä·Î ÇÏ´Â 5G ÀÎÇÁ¶óÀÇ È®ÀåÀº GaN RF µð¹ÙÀ̽ºÀÇ Çʿ伺À» °­Á¶ÇÕ´Ï´Ù. ·¹ÀÌ´õ¿Í Åë½Å ½Ã½ºÅÛÀ» À§ÇØ º¸´Ù °ß°íÇÏ°í ½Å·ÚÇÒ ¼ö ÀÖ´Â RF ÄÄÆ÷³ÍÆ®¸¦ ¿ä±¸ÇÏ´Â ±º»ç ºÐ¾ß¿¡ ´ëÇÑ ¼ö¿äµµ Áß¿äÇÑ ¿ªÇÒÀ» ÇÕ´Ï´Ù. °Ô´Ù°¡ GaN µð¹ÙÀ̽ºÀÇ °í¼º´É¿¡ ÀÇÁ¸ÇÏ´Â À§¼º ±â¼úÀÇ Áøº¸´Â ½ÃÀå ¼ºÀåÀ» ´õ¿í °­È­Çϰí ÀÖ½À´Ï´Ù. Åë½Å ¹× ±âŸ ºÐ¾ß¿¡¼­´Â º¸´Ù ¿¡³ÊÁö È¿À²ÀûÀÎ ±â¼úÀ» ¿ä±¸Çϴ ȯ°æ ±ÔÁ¦°¡ GaN RF µð¹ÙÀ̽ºÀÇ Ã¤ÅÃÀ» µÞ¹ÞħÇϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ÃßÁø ¿äÀÎÀ» Á¾ÇÕÇϸé ÃֽŠRF ¿ëµµ¿¡¼­ GaNÀÇ ±â¼úÀû Á߿伺ÀÌ °­Á¶µÉ »Ó¸¸ ¾Æ´Ï¶ó, ÁøÈ­ÇÏ´Â ±â¼ú ¿ä±¸¿¡ ºÎÀÀÇÏ´Â ÀÌ ½ÃÀå ºÎ¹®ÀÇ ¿ªµ¿ÀûÀÎ ¼ºÀåµµ ºÎ°¢µË´Ï´Ù.

Á¶»ç ´ë»ó ±â¾÷ ¿¹(Àü 39°Ç)

¸ñÂ÷

Á¦1Àå Á¶»ç ¹æ¹ý

Á¦2Àå ÁÖ¿ä ¿ä¾à

Á¦3Àå ½ÃÀå ºÐ¼®

Á¦4Àå °æÀï

AJY
¿µ¹® ¸ñÂ÷

¿µ¹®¸ñÂ÷

Global Gallium Nitride (GaN) RF Devices Market to Reach US$3.0 Billion by 2030

The global market for Gallium Nitride (GaN) RF Devices estimated at US$1.4 Billion in the year 2023, is expected to reach US$3.0 Billion by 2030, growing at a CAGR of 11.4% over the analysis period 2023-2030. Integrated Devices, one of the segments analyzed in the report, is expected to record a 12.0% CAGR and reach US$1.8 Billion by the end of the analysis period. Growth in the Discrete Devices segment is estimated at 10.5% CAGR over the analysis period.

The U.S. Market is Estimated at US$388.0 Million While China is Forecast to Grow at 15.5% CAGR

The Gallium Nitride (GaN) RF Devices market in the U.S. is estimated at US$388.0 Million in the year 2023. China, the world's second largest economy, is forecast to reach a projected market size of US$656.2 Million by the year 2030 trailing a CAGR of 15.5% over the analysis period 2023-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 8.5% and 9.9% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 9.0% CAGR.

Global Gallium Nitride (GaN) RF Devices Market - Key Trends & Drivers Summarized

Understanding GaN RF Devices and Their Market Significance

Gallium Nitride (GaN) RF devices are known for their exceptional efficiency and high power density, making them ideal for use in radio frequency (RF) applications. These devices outperform traditional silicon-based components, especially in high-frequency and high-power settings. GaN RF devices are extensively used in military, satellite, and telecommunications applications due to their ability to operate at higher voltages and temperatures with greater efficiency and reliability.

Technological Developments Enhancing GaN RF Device Capabilities

The technological development of GaN RF devices has been pivotal in enhancing their performance and broadening their application scope. Continuous improvements in GaN semiconductor technology have led to better electron mobility, allowing for more compact and efficient devices. The integration of GaN devices into various systems has been further facilitated by advancements in packaging technologies that enhance thermal management and device durability, critical factors in RF applications.

Expanding Applications of GaN RF Devices

The use of GaN RF devices has expanded beyond traditional sectors to include commercial telecommunications and automotive industries, driven by the demand for high-performance RF components in radar systems, satellite communications, and 5G networks. In the automotive sector, GaN RF devices are increasingly utilized in collision avoidance systems and other radar applications, where their high power and efficiency significantly improve system performance.

What Drives the Growth of the GaN RF Devices Market?

The growth in the GaN RF devices market is driven by several factors. The ongoing expansion of 5G infrastructure, requiring high-power and high-frequency components, particularly underscores the need for GaN RF devices. The military sector's demand for more robust and reliable RF components for radar and communication systems also plays a crucial role. Additionally, advancements in satellite technology, which depend on the high-performance capabilities of GaN devices, further propel the market growth. Environmental regulations pushing for more energy-efficient technologies in telecommunications and other sectors boost the adoption of GaN RF devices. Collectively, these drivers not only underscore the technological importance of GaN in modern RF applications but also highlight the dynamic growth of this market segment in response to evolving technological needs.

Select Competitors (Total 39 Featured) -

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

III. MARKET ANALYSIS

IV. COMPETITION

(ÁÖ)±Û·Î¹úÀÎÆ÷¸ÞÀÌ¼Ç 02-2025-2992 kr-info@giikorea.co.kr
¨Ï Copyright Global Information, Inc. All rights reserved.
PC¹öÀü º¸±â