RF GaN 반도체 소자 시장 : 세계 산업 규모, 점유율, 동향, 기회, 예측 - 재료별, 용도별, 최종사용자별, 지역별, 경쟁별(2020-2030년)
RF GaN Semiconductor Device Market - Global Industry Size, Share, Trends, Opportunity, and Forecast, Segmented By Material, By Application, By End-Users, By Region, By Competition, 2020-2030F
상품코드:1881532
리서치사:TechSci Research
발행일:2025년 11월
페이지 정보:영문 180 Pages
라이선스 & 가격 (부가세 별도)
ㅁ Add-on 가능: 고객의 요청에 따라 일정한 범위 내에서 Customization이 가능합니다. 자세한 사항은 문의해 주시기 바랍니다.
한글목차
세계의 RF GaN 반도체 소자 시장은 2024년에 24억 2,000만 달러로 평가되었으며, 2030년까지 CAGR 20.83%로 성장하여 75억 3,000만 달러에 달할 것으로 예측됩니다.
RF 질화갈륨(GaN) 반도체 소자는 질화갈륨의 광대역 갭 특성을 활용한 부품으로, 고주파 및 고출력 무선 주파수 애플리케이션에서 높은 내전압, 향상된 전력 밀도, 효율적인 동작 등 우수한 성능을 발휘합니다. 시장 성장은 근본적으로 더 높은 주파수와 전력 수준을 관리하기 위해 기지국용 고성능 RF 부품이 필요한 5G 통신 인프라의 광범위한 세계 확산에 의해 뒷받침되고 있습니다.
시장 개요
예측 기간
2026-2030년
시장 규모 : 2024년
24억 2,000만 달러
시장 규모 : 2030년
75억 3,000만 달러
CAGR : 2025-2030년
20.83%
가장 빠르게 성장하는 부문
GaN-On-Diamond
최대 시장
북미
주요 시장 촉진요인
5G 네트워크의 세계 보급 가속화는 고주파 GaN 반도체 소자의 중요한 촉진요인입니다. 질화갈륨은 고주파수 영역에서 높은 전력 밀도와 효율을 가지고 있어 5G 기지국 및 능동형 안테나 시스템에 필수적인 전력 증폭기 및 프론트엔드 모듈에 적합한 소재입니다.
주요 시장 과제
고유한 제조상의 복잡성과 치솟는 생산비용은 세계 RF GaN 반도체 소자 시장의 지속적인 성장에 큰 도전이 되고 있습니다. GaN 소자를 제조하기 위해서는 엄격한 환경 관리와 고가의 전용 장비를 포함한 고도로 전문화된 제조 공정이 필요합니다.
주요 시장 동향
소자의 소형화 및 모놀리식 집적화는 중요한 진전이며, 더 작고 고성능이며 열효율적인 RF 시스템의 개발을 촉진하고 있습니다. 이러한 추세는 더 적은 설치 공간에서 더 높은 기능성을 구현할 수 있게 해주며, 첨단 RF 기능을 더 넓은 플랫폼에 통합하는 데 필수적입니다.
목차
제1장 개요
제2장 조사 방법
제3장 주요 요약
제4장 고객의 소리
제5장 세계의 RF GaN 반도체 소자 시장 전망
시장 규모 및 예측
금액별
시장 점유율과 예측
재료별(GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond)
최종사용자별(항공우주 및 방위, IT·통신, 소비자 전자제품, 자동차, 기타)
용도별(무선 인프라, 전력 저장, 위성통신, 태양광발전 인버터, 기타)
지역별
기업별(2024)
시장 맵
제6장 북미의 RF GaN 반도체 소자 시장 전망
시장 규모 및 예측
시장 점유율과 예측
북미 : 국가별 분석
미국
캐나다
멕시코
제7장 유럽의 RF GaN 반도체 소자 시장 전망
시장 규모 및 예측
시장 점유율과 예측
유럽 : 국가별 분석
독일
프랑스
영국
이탈리아
스페인
제8장 아시아태평양의 RF GaN 반도체 소자 시장 전망
시장 규모 및 예측
시장 점유율과 예측
아시아태평양 : 국가별 분석
중국
인도
일본
한국
호주
제9장 중동 및 아프리카의 RF GaN 반도체 소자 시장 전망
시장 규모 및 예측
시장 점유율과 예측
중동 및 아프리카 : 국가별 분석
사우디아라비아
아랍에미리트
남아프리카공화국
제10장 남미의 RF GaN 반도체 소자 시장 전망
시장 규모 및 예측
시장 점유율과 예측
남미 : 국가별 분석
브라질
콜롬비아
아르헨티나
제11장 시장 역학
성장 촉진요인
과제
제12장 시장 동향과 발전
인수합병
제품 출시
최근 동향
제13장 세계의 RF GaN 반도체 소자 시장 : SWOT 분석
제14장 Porter's Five Forces 분석
업계내 경쟁
신규 참여의 가능성
공급업체의 능력
고객의 능력
대체품의 위협
제15장 경쟁 구도
Taiwan Semiconductor Manufacturing Company Limited
Samsung Electronics Co., Ltd.
Intel Corporation
GlobalFoundries Inc.
United Microelectronics Corporation
Micron Technology, Inc.
Semiconductor Manufacturing International Corporation
STMicroelectronics International N.V.
NXP Semiconductors N.V.
Analog devises Inc.
제16장 전략적 제안
제17장 조사 회사 소개 및 면책사항
KSM
영문 목차
영문목차
The Global RF GaN Semiconductor Device Market, valued at USD 2.42 Billion in 2024, is projected to experience a CAGR of 20.83% to reach USD 7.53 Billion by 2030. RF Gallium Nitride (GaN) semiconductor devices are components leveraging the wide-bandgap properties of Gallium Nitride to deliver superior performance in high-frequency and high-power radio frequency applications, characterized by high breakdown voltage, enhanced power density, and efficient operation. The market's growth is fundamentally supported by the extensive global deployment of 5G telecommunications infrastructure, requiring advanced RF components for base stations to manage higher frequencies and power levels.
Market Overview
Forecast Period
2026-2030
Market Size 2024
USD 2.42 Billion
Market Size 2030
USD 7.53 Billion
CAGR 2025-2030
20.83%
Fastest Growing Segment
GaN-On-Diamond
Largest Market
North America
Key Market Drivers
The accelerated global deployment of 5G networks is a significant driver for RF GaN semiconductor devices. Gallium nitride's high power density and efficiency at high frequencies make it an optimal material for the power amplifiers and front-end modules essential to 5G base stations and active antenna systems. This technology enables telecommunication infrastructure to support increased bandwidth and lower latency, facilitating denser network coverage and faster data transmission
Key Market Challenges
The inherent manufacturing complexity and elevated production costs present a significant challenge to the sustained growth of the Global RF GaN Semiconductor Device Market. Producing GaN devices requires highly specialized fabrication processes, including stringent environmental controls and costly, dedicated equipment. This substantially increases per-unit expenses and often results in lower manufacturing yields when compared to more mature silicon technologies. These factors directly impede market expansion by making RF GaN components less competitive in price-sensitive applications and limiting broader adoption, despite their superior performance attributes.
Key Market Trends
Miniaturization and monolithic integration of devices represent a key advancement, driving the development of smaller, more powerful, and thermally efficient RF systems. This trend allows for greater functionality in reduced footprints, essential for integrating advanced RF capabilities into a wider array of platforms. As companies invest heavily in such technological progress, according to the Semiconductor Industry Association, U. S. semiconductor industry investment in research and development totaled $59.3 billion in 2023, representing a 0.9% increase over 2022. This sustained investment supports the intricate fabrication processes required for highly integrated GaN solutions.
Key Market Players
Taiwan Semiconductor Manufacturing Company Limited
Samsung Electronics Co., Ltd.
Intel Corporation
GlobalFoundries Inc.
United Microelectronics Corporation
Micron Technology, Inc.
Semiconductor Manufacturing International Corporation
STMicroelectronics International N.V.
NXP Semiconductors N.V.
Analog devises Inc.
Report Scope:
In this report, the Global RF GaN Semiconductor Device Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:
RF GaN Semiconductor Device Market, By Material:
GaN-On-SiC
GaN-On-Silicon
GaN-On-Diamond
RF GaN Semiconductor Device Market, By End-Users:
Aerospace & Defense
IT & Telecom
Consumer Electronics
Automotive
Others
RF GaN Semiconductor Device Market, By Application:
Wireless Infrastructure
Power Storage
Satellite Communication
PV Inverter
Others
RF GaN Semiconductor Device Market, By Region:
North America
United States
Canada
Mexico
Europe
France
United Kingdom
Italy
Germany
Spain
Asia Pacific
China
India
Japan
Australia
South Korea
South America
Brazil
Argentina
Colombia
Middle East & Africa
South Africa
Saudi Arabia
UAE
Competitive Landscape
Company Profiles: Detailed analysis of the major companies presents in the Global RF GaN Semiconductor Device Market.
Available Customizations:
Global RF GaN Semiconductor Device Market report with the given market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report:
Company Information
Detailed analysis and profiling of additional market players (up to five).
Table of Contents
1. Product Overview
1.1. Market Definition
1.2. Scope of the Market
1.2.1. Markets Covered
1.2.2. Years Considered for Study
1.2.3. Key Market Segmentations
2. Research Methodology
2.1. Objective of the Study
2.2. Baseline Methodology
2.3. Key Industry Partners
2.4. Major Association and Secondary Sources
2.5. Forecasting Methodology
2.6. Data Triangulation & Validation
2.7. Assumptions and Limitations
3. Executive Summary
3.1. Overview of the Market
3.2. Overview of Key Market Segmentations
3.3. Overview of Key Market Players
3.4. Overview of Key Regions/Countries
3.5. Overview of Market Drivers, Challenges, Trends
4. Voice of Customer
5. Global RF GaN Semiconductor Device Market Outlook
5.1. Market Size & Forecast
5.1.1. By Value
5.2. Market Share & Forecast
5.2.1. By Material (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond)
5.2.2. By End-Users (Aerospace & Defense, IT & Telecom, Consumer Electronics, Automotive, Others)
5.2.3. By Application (Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, Others)
5.2.4. By Region
5.2.5. By Company (2024)
5.3. Market Map
6. North America RF GaN Semiconductor Device Market Outlook
6.1. Market Size & Forecast
6.1.1. By Value
6.2. Market Share & Forecast
6.2.1. By Material
6.2.2. By End-Users
6.2.3. By Application
6.2.4. By Country
6.3. North America: Country Analysis
6.3.1. United States RF GaN Semiconductor Device Market Outlook
6.3.1.1. Market Size & Forecast
6.3.1.1.1. By Value
6.3.1.2. Market Share & Forecast
6.3.1.2.1. By Material
6.3.1.2.2. By End-Users
6.3.1.2.3. By Application
6.3.2. Canada RF GaN Semiconductor Device Market Outlook
6.3.2.1. Market Size & Forecast
6.3.2.1.1. By Value
6.3.2.2. Market Share & Forecast
6.3.2.2.1. By Material
6.3.2.2.2. By End-Users
6.3.2.2.3. By Application
6.3.3. Mexico RF GaN Semiconductor Device Market Outlook
6.3.3.1. Market Size & Forecast
6.3.3.1.1. By Value
6.3.3.2. Market Share & Forecast
6.3.3.2.1. By Material
6.3.3.2.2. By End-Users
6.3.3.2.3. By Application
7. Europe RF GaN Semiconductor Device Market Outlook
7.1. Market Size & Forecast
7.1.1. By Value
7.2. Market Share & Forecast
7.2.1. By Material
7.2.2. By End-Users
7.2.3. By Application
7.2.4. By Country
7.3. Europe: Country Analysis
7.3.1. Germany RF GaN Semiconductor Device Market Outlook
7.3.1.1. Market Size & Forecast
7.3.1.1.1. By Value
7.3.1.2. Market Share & Forecast
7.3.1.2.1. By Material
7.3.1.2.2. By End-Users
7.3.1.2.3. By Application
7.3.2. France RF GaN Semiconductor Device Market Outlook
7.3.2.1. Market Size & Forecast
7.3.2.1.1. By Value
7.3.2.2. Market Share & Forecast
7.3.2.2.1. By Material
7.3.2.2.2. By End-Users
7.3.2.2.3. By Application
7.3.3. United Kingdom RF GaN Semiconductor Device Market Outlook
7.3.3.1. Market Size & Forecast
7.3.3.1.1. By Value
7.3.3.2. Market Share & Forecast
7.3.3.2.1. By Material
7.3.3.2.2. By End-Users
7.3.3.2.3. By Application
7.3.4. Italy RF GaN Semiconductor Device Market Outlook
7.3.4.1. Market Size & Forecast
7.3.4.1.1. By Value
7.3.4.2. Market Share & Forecast
7.3.4.2.1. By Material
7.3.4.2.2. By End-Users
7.3.4.2.3. By Application
7.3.5. Spain RF GaN Semiconductor Device Market Outlook
7.3.5.1. Market Size & Forecast
7.3.5.1.1. By Value
7.3.5.2. Market Share & Forecast
7.3.5.2.1. By Material
7.3.5.2.2. By End-Users
7.3.5.2.3. By Application
8. Asia Pacific RF GaN Semiconductor Device Market Outlook
8.1. Market Size & Forecast
8.1.1. By Value
8.2. Market Share & Forecast
8.2.1. By Material
8.2.2. By End-Users
8.2.3. By Application
8.2.4. By Country
8.3. Asia Pacific: Country Analysis
8.3.1. China RF GaN Semiconductor Device Market Outlook
8.3.1.1. Market Size & Forecast
8.3.1.1.1. By Value
8.3.1.2. Market Share & Forecast
8.3.1.2.1. By Material
8.3.1.2.2. By End-Users
8.3.1.2.3. By Application
8.3.2. India RF GaN Semiconductor Device Market Outlook
8.3.2.1. Market Size & Forecast
8.3.2.1.1. By Value
8.3.2.2. Market Share & Forecast
8.3.2.2.1. By Material
8.3.2.2.2. By End-Users
8.3.2.2.3. By Application
8.3.3. Japan RF GaN Semiconductor Device Market Outlook
8.3.3.1. Market Size & Forecast
8.3.3.1.1. By Value
8.3.3.2. Market Share & Forecast
8.3.3.2.1. By Material
8.3.3.2.2. By End-Users
8.3.3.2.3. By Application
8.3.4. South Korea RF GaN Semiconductor Device Market Outlook
8.3.4.1. Market Size & Forecast
8.3.4.1.1. By Value
8.3.4.2. Market Share & Forecast
8.3.4.2.1. By Material
8.3.4.2.2. By End-Users
8.3.4.2.3. By Application
8.3.5. Australia RF GaN Semiconductor Device Market Outlook
8.3.5.1. Market Size & Forecast
8.3.5.1.1. By Value
8.3.5.2. Market Share & Forecast
8.3.5.2.1. By Material
8.3.5.2.2. By End-Users
8.3.5.2.3. By Application
9. Middle East & Africa RF GaN Semiconductor Device Market Outlook
9.1. Market Size & Forecast
9.1.1. By Value
9.2. Market Share & Forecast
9.2.1. By Material
9.2.2. By End-Users
9.2.3. By Application
9.2.4. By Country
9.3. Middle East & Africa: Country Analysis
9.3.1. Saudi Arabia RF GaN Semiconductor Device Market Outlook
9.3.1.1. Market Size & Forecast
9.3.1.1.1. By Value
9.3.1.2. Market Share & Forecast
9.3.1.2.1. By Material
9.3.1.2.2. By End-Users
9.3.1.2.3. By Application
9.3.2. UAE RF GaN Semiconductor Device Market Outlook
9.3.2.1. Market Size & Forecast
9.3.2.1.1. By Value
9.3.2.2. Market Share & Forecast
9.3.2.2.1. By Material
9.3.2.2.2. By End-Users
9.3.2.2.3. By Application
9.3.3. South Africa RF GaN Semiconductor Device Market Outlook
9.3.3.1. Market Size & Forecast
9.3.3.1.1. By Value
9.3.3.2. Market Share & Forecast
9.3.3.2.1. By Material
9.3.3.2.2. By End-Users
9.3.3.2.3. By Application
10. South America RF GaN Semiconductor Device Market Outlook
10.1. Market Size & Forecast
10.1.1. By Value
10.2. Market Share & Forecast
10.2.1. By Material
10.2.2. By End-Users
10.2.3. By Application
10.2.4. By Country
10.3. South America: Country Analysis
10.3.1. Brazil RF GaN Semiconductor Device Market Outlook
10.3.1.1. Market Size & Forecast
10.3.1.1.1. By Value
10.3.1.2. Market Share & Forecast
10.3.1.2.1. By Material
10.3.1.2.2. By End-Users
10.3.1.2.3. By Application
10.3.2. Colombia RF GaN Semiconductor Device Market Outlook
10.3.2.1. Market Size & Forecast
10.3.2.1.1. By Value
10.3.2.2. Market Share & Forecast
10.3.2.2.1. By Material
10.3.2.2.2. By End-Users
10.3.2.2.3. By Application
10.3.3. Argentina RF GaN Semiconductor Device Market Outlook
10.3.3.1. Market Size & Forecast
10.3.3.1.1. By Value
10.3.3.2. Market Share & Forecast
10.3.3.2.1. By Material
10.3.3.2.2. By End-Users
10.3.3.2.3. By Application
11. Market Dynamics
11.1. Drivers
11.2. Challenges
12. Market Trends & Developments
12.1. Merger & Acquisition (If Any)
12.2. Product Launches (If Any)
12.3. Recent Developments
13. Global RF GaN Semiconductor Device Market: SWOT Analysis
14. Porter's Five Forces Analysis
14.1. Competition in the Industry
14.2. Potential of New Entrants
14.3. Power of Suppliers
14.4. Power of Customers
14.5. Threat of Substitute Products
15. Competitive Landscape
15.1. Taiwan Semiconductor Manufacturing Company Limited
15.1.1. Business Overview
15.1.2. Products & Services
15.1.3. Recent Developments
15.1.4. Key Personnel
15.1.5. SWOT Analysis
15.2. Samsung Electronics Co., Ltd.
15.3. Intel Corporation
15.4. GlobalFoundries Inc.
15.5. United Microelectronics Corporation
15.6. Micron Technology, Inc.
15.7. Semiconductor Manufacturing International Corporation
