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세계의 GaN on Si EPI 웨이퍼 시장 : 구조, 용도, 조달 모델, 산업, 지역별(-2030년)
Global GaN on Si EPI wafers Market Research Report Information By Structure, By Application, By Procurement model, By Industry Vertical And By Region -Forecast Till 2030
상품코드 : 1499362
리서치사 : Market Research Future
발행일 : 2024년 05월
페이지 정보 : 영문 241 Pages
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한글목차

GaN on Si EPI 웨이퍼 시장 규모는 2024-2030년의 예측 기간 중 16.6%의 CAGR로 성장할 것으로 예측되고 있습니다.

GaN on Si EPI 웨이퍼 시장의 성장은 무선 충전의 수요 확대, 고전력 밀도 파워 일렉트로닉스의 수요 증가, CE 제품 및 자동차 산업으로부터의 대폭적인 수요 등의 주요 촉진요인에 의해 촉진되고 있습니다.

GaN on Si EPI 웨이퍼 시장의 주요 원동력은 전력 밀도가 높은 파워 일렉트로닉스에 대한 수요 증가입니다. 전자 장비의 소형화 추세와 고성능 전자 제품에 대한 수요 증가는 GaN on Si EPI 웨이퍼 시장을 촉진하는 두 가지 주요 요인입니다. 전자기기의 복잡성 및 소형화에 따라 더 작고 효율적인 파워 일렉트로닉스에 대한 수요가 증가하고 있습니다. GaN on Si EPI 웨이퍼는 기존 실리콘 기반 전력전자에 비해 높은 전력 밀도와 효율을 제공하기 때문에 보다 효율적이고 컴팩트한 전력전자를 필요로 하는 고출력 용도에 최적의 선택이 될 것입니다. 5G 기술은 이전 세대의 무선 기술보다 더 높은 데이터 속도와 주파수를 달성하기 위해 GaN을 포함한 새로운 재료와 기술을 필요로 하며, GaN은 현재 RF 용도에 사용되고 있으며, 향후 5G 기술에서의 활용이 크게 확대될 것으로 예상됩니다. 크게 확대될 것으로 예상됩니다.

지역별 전망

지역별로는 아시아태평양이 가장 큰 시장 점유율을 차지하며 전체의 44.1%를 차지했습니다. 북미는 2위를 차지하며 전체의 29.3%를 차지합니다.

세계의 GaN on Si EPI 웨이퍼 시장을 조사했으며, 시장의 정의와 개요, 시장 성장에 대한 영향요인 및 시장 기회의 분석, 시장 규모의 추이·예측, 각종 구분·지역/주요 국가별 내역, 경쟁 환경, 주요 기업의 개요 등을 정리하여 전해드립니다.

목차

제1장 주요 요약

제2장 시장 개요

제3장 조사 방법

제4장 시장 역학

제5장 시장 요인 분석

제6장 세계의 GaN on Si EPI 웨이퍼 시장 : 구조별

제7장 세계의 GaN on Si EPI 웨이퍼 시장 : 용도별

제8장 세계의 GaN on Si EPI 웨이퍼 시장 : 조달 모델별

제9장 세계의 GaN on Si EPI 웨이퍼 시장 : 산업별

제10장 세계의 GaN on Si EPI 웨이퍼 시장 : 지역별

제11장 경쟁 구도

제12장 기업 개요

KSA
영문 목차

영문목차

Global GaN on Si EPI wafers Market Research Report Information By Structure (Lateral GaN on Si, Vertical GaN on Si, and Hybrid GaN on Si), By Application (Low power applications, medium power applications, High power applications, and Very high power applications), By Procurement model (Tender based and direct purchase), By Industry Vertical (IT & Telecom, Consumer electronics, Automotive, Aerospace & Defense, Others) And By Region (North America, Europe, Asia-Pacific, Middle East & Africa, And South America) -Forecast Till 2030

Market Overview

The GaN on Si EPI wafers market industry is anticipated to experience a compound annual growth rate (CAGR) of 16.6%. This growth is expected to occur over the forecast period of 2024 to 2030. The growth of the GaN on Si EPI wafers market is being driven by the following key market drivers: the growing demand for wireless charging, the increasing demand for higher power density power electronics, and the significant demand from the consumer electronics and automotive sectors.

The GaN on Si EPI wafer market is primarily driven by the growing demand for power electronics with a higher power density. The trend toward miniaturization of electronic devices and the growing demand for high-performance electronic products are two of the primary factors driving the GaN on Si EPI wafer market. The demand for power electronics that are more compact and efficient is increasing as electronic devices become more complex and smaller. In comparison to conventional silicon-based power electronics, GaN on Si EPI wafers provide a higher power density and efficiency, rendering them the optimal choice for high-power applications that necessitate more efficient and compact power electronics. The increasing demand for 5G technology is another factor driving the GaN on Si EPI wafer market. 5G technology necessitates the utilization of new materials and technologies, including GaN, to achieve higher data rates and frequencies than previous generations of wireless technology. GaN is currently employed in RF applications, and it is anticipated that its utilization in 5G technology will expand substantially in the years ahead.

Market Segmentation

The GaN on Si EPI wafers market in this report has been segmented into three varieties based on structure: Lateral GaN on Si, Vertical GaN on Si, and Hybrid GaN on Si.

In this report, the GaN on Si EPI wafers Market has been segmented by application (low-power, medium-power, high-power, and very high-power).

The GaN on Si EPI wafers Market has been segmented into Tender Based and Direct Purchase based on the procurement model in this report.

Direct purchase is a procurement model that is frequently employed in a variety of industries to acquire GaN on Si EPI wafers.

The GaN on Si EPI wafers market in this report has been segmented according to the following categories: aerospace and defense, automotive, consumer electronics, safety and security, and IT & telecom.

Regional Perspectives

North America, Europe, Asia-Pacific, Middle East & Africa, and South America comprise the global GaN on Si EPI wafer market, which is segmented by region. The Asia-Pacific region has the largest market share, accounting for 44.1% of the total share. North America has the second-largest market share, accounting for 29.3% of the total share.

North America has been further divided into the United States, Canada, and Mexico. Due to the presence of notable GaN on Silicon companies such as Texas Instruments Incorporated and NXP USA Inc, North America holds one of the largest market segments in the power market for GaN on Silicon. The GaN market's main players have been developing the technology for more than 15 years and have accumulated a substantial amount of knowledge, skill, and competence. However, the most significant development is the almost fervent sense of faith they have developed in the long-term potential of technology.

The Asia-Pacific region has been further divided into the following categories: China, Japan, India, and the Rest of AsiaPacific. Another promising market for GaN on Si for power is the Asia-Pacific region. The Asia-Pacific region is a hub for semiconductor, aerospace, and automotive technology. China, India, and Japan hold substantial market shares in the energy-efficient electronics sector as a result of their swiftly expanding markets. One of the primary factors contributing to the expansion of GaN on Si for power in the Asia-Pacific region is the rapidly evolving semiconductor market.

Major Players

Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, NEXPERIA, Semiconductor Components Industries, Llc, Rohm Company Ltd, Broadcom Inc, MACOM Technology Solutions Inc, WOLFSPEED, INC, X-FAB Silicon Foundries SE, NXP Semiconductors, Renesas Electronics Corp, VisIC Technologies Ltd, and Qorvo Inc. are among the major players in the market.

TABLE OF CONTENTS

1 EXECUTIVE SUMMARY

2 MARKET INTRODUCTION

3 RESEARCH METHODOLOGY

4 MARKET DYNAMICS

IN HIGH-VOLTAGE SEMICONDUCTOR APPLICATIONS RESTRAINS 43

5 MARKET FACTOR ANALYSIS

6 GLOBAL GAN ON SI EPI WAFERS MARKET, BY STRUCTURE

7 GLOBAL GAN ON SI EPI WAFERS MARKET, BY APPLICATION

8 GLOBAL GAN ON SI EPI WAFERS MARKET, BY PROCUREMENT MODEL

9 GLOBAL GAN ON SI EPI WAFERS MARKET, BY INDUSTRY VERTICAL

10 GLOBAL GAN ON SI EPI WAFERS MARKET, BY REGION

11 COMPETITIVE LANDSCAPE

12 COMPANY PROFILE

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