¼¼°èÀÇ ¹ÝµµÃ¼¿ë ALD ¹× CVD Àü±¸Ã¼ ½ÃÀå
ALD and CVD Precursor for Semiconductors
»óǰÄÚµå : 1744947
¸®¼­Ä¡»ç : Global Industry Analysts, Inc.
¹ßÇàÀÏ : 2025³â 06¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 285 Pages
 ¶óÀ̼±½º & °¡°Ý (ºÎ°¡¼¼ º°µµ)
US $ 5,850 £Ü 8,136,000
PDF (Single User License) help
PDF º¸°í¼­¸¦ 1¸í¸¸ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â °¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 17,550 £Ü 24,408,000
PDF (Global License to Company and its Fully-owned Subsidiaries) help
PDF º¸°í¼­¸¦ µ¿ÀÏ ±â¾÷ÀÇ ¸ðµç ºÐÀÌ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â °¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.


Çѱ۸ñÂ÷

¼¼°èÀÇ ¹ÝµµÃ¼¿ë ALD ¹× CVD Àü±¸Ã¼ ½ÃÀåÀº 2030³â±îÁö 21¾ï ´Þ·¯¿¡ À̸¦ Àü¸Á

2024³â¿¡ 14¾ï ´Þ·¯·Î ÃßÁ¤µÇ´Â ¹ÝµµÃ¼¿ë ALD ¹× CVD Àü±¸Ã¼ ¼¼°è ½ÃÀåÀº ºÐ¼® ±â°£2024-2030³â¿¡ CAGR 7.1%·Î ¼ºÀåÇÏ¿© 2030³â¿¡´Â 21¾ï ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. º» º¸°í¼­¿¡¼­ ºÐ¼®ÇÑ ºÎ¹® Áß ÇϳªÀÎ ½Ç¸®ÄÜ Àü±¸Ã¼´Â CAGR5.4%¸¦ ³ªÅ¸³»°í, ºÐ¼® ±â°£ Á¾·á½Ã¿¡´Â 9¾ï 1,710¸¸ ´Þ·¯¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ƼŸ´½ Àü±¸Ã¼ ºÎ¹®ÀÇ ¼ºÀå·üÀº ºÐ¼® ±â°£¿¡ CAGR 8.9%·Î ÃßÁ¤µË´Ï´Ù.

¹Ì±¹ ½ÃÀåÀº 3¾ï 8,460¸¸ ´Þ·¯·Î ÃßÁ¤, Áß±¹Àº CAGR 10.8%·Î ¼ºÀå ¿¹Ãø

¹Ì±¹ÀÇ ¹ÝµµÃ¼¿ë ALD ¹× CVD Àü±¸Ã¼ ½ÃÀåÀº 2024³â¿¡ 3¾ï 8,460¸¸ ´Þ·¯·Î ÃßÁ¤µË´Ï´Ù. ¼¼°è 2À§ °æÁ¦´ë±¹ÀÎ Áß±¹Àº ºÐ¼® ±â°£ÀÎ 2024-2030³â°£ CAGR 10.8%·Î 2030³â±îÁö 4¾ï 3,900¸¸ ´Þ·¯ ±Ô¸ð¿¡ À̸¦ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ±âŸ ÁÖ¸ñÇØ¾ß ÇÒ Áö¿ªº° ½ÃÀåÀ¸·Î¼­´Â ÀϺ»°ú ij³ª´Ù°¡ ÀÖÀ¸¸ç, ºÐ¼® ±â°£Áß CAGRÀº °¢°¢ 3.7%¿Í 6.8%¸¦ º¸ÀÏ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. À¯·´¿¡¼­´Â µ¶ÀÏÀÌ CAGR 4.6%¸¦ º¸ÀÏ Àü¸ÁÀÔ´Ï´Ù.

¹ÝµµÃ¼¿ë ALD ¹× CVD Àü±¸Ã¼ ¼¼°è ½ÃÀå - ÁÖ¿ä µ¿Çâ°ú ÃËÁø¿äÀÎ Á¤¸®

ALD¿Í CVD Àü±¸Ã¼°¡ ÷´Ü ³ëµå Á¦Á¶ ¹× 3D µð¹ÙÀ̽º ¾ÆÅ°ÅØÃ³¿¡ ÇʼöÀûÀÎ ÀÌÀ¯´Â ¹«¾ùÀΰ¡?

¿øÀÚÃþ ÁõÂø(ALD)°ú È­ÇÐ ±â»ó ¼ºÀå(CVD)Àº ¹ÝµµÃ¼ Á¦Á¶ÀÇ ±âÃʰ¡ µÇ´Â ¹Ú¸· ±â¼ú·Î¼­, ¿øÀÚ ´ÜÀ§ÀÇ Á¤¹ÐÇϰí ÄÁÆ÷¸ÖÇÑ Àç·áÀÇ ÄÚÆÃÀ» °¡´ÉÇÏ°Ô ÇÏ´Â ALD/CVD Àü±¸Ã¼(Á¦¾îµÈ ¿Âµµ¿¡¼­ ºÐÇØ ¶Ç´Â ¹ÝÀÀÇÏ´Â À¯±â ±Ý¼Ó ¶Ç´Â ¹«±â È­ÇÕ¹°)´Â °ÔÀÌÆ® Àý¿¬¸·, ±Ý¼Ó »óÈ£ ¿¬°á, È®»ê À庮 ¹× ÆÐÅÍ´× ÇÏµå ¸¶½ºÅ©¸¦ À§ÇÑ °í¼º´É ÃþÀ» Çü¼ºÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÕ´Ï´Ù. ±Ý¼Ó »óÈ£¿¬°á, È®»ê À庮 ¹× ÆÐÅÍ´× Çϵ帶½ºÅ©¿ë °í¼º´É ÃþÀ» Çü¼ºÇÏ´Â µ¥ ¸Å¿ì Áß¿äÇÕ´Ï´Ù. ÀÌ·¯ÇÑ ¸·Àº Æ®·£Áö½ºÅÍ ½ºÄÉÀϸµ, À¯Àüü Àý¿¬, ÆÐŰ¡ ÅëÇÕ, ·ÎÁ÷, ¸Þ¸ð¸®, Àü·Â ¼ÒÀÚ Àü¹Ý¿¡ °ÉÃÄ Æ®·£Áö½ºÅÍ ½ºÄÉÀϸµ, À¯Àüü Àý¿¬, ÆÐŰ¡ÀÇ Áß½ÉÀÌ µÇ°í ÀÖ½À´Ï´Ù.

¾÷°è°¡ 5nm ÀÌÇÏ ³ëµå¿Í º¹ÀâÇÑ 3D ¾ÆÅ°ÅØÃ³(FinFET, GAA, 3D NAND)·Î ÀüȯÇÔ¿¡ µû¶ó, ÇÁ¸®Ä«»çÀÇ ¿ªÇÒÀº ÀüÅëÀûÀÎ ÁõÂø¿¡¼­ ¿øÀÚ ¼öÁØÀÇ Àç·á °øÇÐÀ¸·Î È®´ëµÇ°í ÀÖ½À´Ï´Ù. ºÐÀÚ ¼³°è´Â ¸·ÀÇ ±ÕÀϼº, ½ºÅÜ Ä¿¹ö¸®Áö, ÁõÂø ¿Âµµ, Àü±âÀû Ư¼º¿¡ Á÷Á¢ÀûÀÎ ¿µÇâÀ» ¹ÌÄ¡¸ç, ¹ÝµµÃ¼ Á¦Á¶ÀÇ ¼º´É, ¼öÀ², ½ºÄÉÀϸµ ¸ñÇ¥¸¦ ´Þ¼ºÇÏ´Â µ¥ ÇʼöÀûÀÎ ¿ä¼Ò·Î ÀÛ¿ëÇÕ´Ï´Ù.

÷´Ü ¼º¸· ¿ä±¸ »çÇ×À» ÃæÁ·½Ã۱â À§ÇØ Àü±¸Ã¼ È­ÇÐ ¹× °ø±Þ ½Ã½ºÅÛÀº ¾î¶»°Ô ÁøÈ­Çϰí Àִ°¡?

Àü±¸Ã¼ÀÇ Àç·á Çõ½ÅÀº °øÁ¤º° Á¶°Ç¿¡¼­ ¿­ ¾ÈÁ¤¼º, Èֹ߼º, ¹ÝÀÀ¼º °³¼±ÀÌ Áß½ÉÀÌ µÇ°í ÀÖ½À´Ï´Ù. °í¼øµµ, ±ÕÀϼº, ¿øÀÚ ¼öÁØÀÇ Á¤¹Ðµµ·Î ±Ý¼Ó(¿¹: Co, Ru, Ti, W) ¹× À¯Àüü(¿¹: HfO2, Al2O3, SiN)¸¦ °í¼øµµ, ±ÕÀϼº, ¿øÀÚ ¼öÁØÀÇ Á¤¹Ðµµ·Î ÁõÂøÇϱâ À§ÇØ Á¶Á¤µÈ ¸®°£µå, À¯±â ±Ý¼Ó °ñ°Ý ¹× ÀÌÁ¾ º¹ÇÕü°¡ ¼³°èµË´Ï´Ù. Àü±¸Ã¼ ¹èÇÕÀº ÇöóÁ °­È­, Àú¿Â ¶Ç´Â ¼±ÅÃÀû ÁõÂøÀÇ ÀÌ¿ë »ç·Ê¿¡ µû¶ó Á¡Á¡ ´õ ¸ÂÃãÈ­µÇ°í ÀÖ½À´Ï´Ù.

¸¶Âù°¡Áö·Î Áß¿äÇÑ °ÍÀº Ãʼø¼ö(UHP) ÀúÀå ¿ë±â, ½Ç½Ã°£ À¯·® Á¦¾î±â, ¿Âµµ Á¦¾î ±âÈ­±â µîÀÇ ÇÁ¸®Ä¿¼­ °ø±Þ ½Ã½ºÅÛÀÇ ¹ßÀüÀ¸·Î °íÁø°ø ȯ°æ¿¡¼­ ¾ÈÁ¤ÀûÀÎ ¿À¿° ¾ø´Â °ø±ÞÀ» º¸ÀåÇÏ´Â °ÍÀÔ´Ï´Ù. ÆÞ½º ÇÁ¸®Ä¿¼­ÀÇ µµÀÔÀÌ È¿°úÀûÀÌÁö¸¸, CVD ½Ã½ºÅÛ¿¡¼­´Â ¿¬¼ÓÀûÀÎ È帧 ¿ªÇÐÀÌ Áß¿äÇÕ´Ï´Ù. ÇÁ¸®Ä¿¼­ ÇÕ¼º ¹× ÆÐŰ¡ÀÇ Çõ½ÅÀº °áÇÔ À§ÇèÀ» ÁÙÀÌ°í ´ë·® »ý»ê¿¡ ÇʼöÀûÀÎ ¹Ýº¹ °¡´ÉÇÑ °í󸮷® ÁõÂøÀ» °¡´ÉÇÏ°Ô ÇÕ´Ï´Ù.

ALD ¹× CVD Àü±¸Ã¼ ¼ö¿ä Áõ°¡¸¦ ÁÖµµÇÏ´Â ¹ÝµµÃ¼ ÀÀ¿ë ºÐ¾ß ¹× ½ÃÀå ºÎ¹®Àº ¹«¾ùÀΰ¡?

·ÎÁ÷ °øÀå°ú ¸Þ¸ð¸® °øÀåÀº ALD¿Í CVD Àü±¸Ã¼, ƯÈ÷ HKMG, Ãþ°£ Àý¿¬¸·(ILD), ÷´Ü ¿¡Äª ½ºÅéÃþ¿¡ ´ëÇÑ ALD¿Í CVD Àü±¸Ã¼ÀÇ ÃÖ´ë ¼ö¿äóÀ̸ç, 3D NAND¿Í DRAMÀÇ ¹Ì¼¼È­·Î ÀÎÇØ Æ®·»Ä¡ ¹× ½ºÅà ¾ÆÅ°ÅØÃ³ÀÇ °íÁ¾È¾ºñ ÀûÇÕ¼º¿¡ ´ëÇÑ Çʿ伺ÀÌ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. CVD´Â ¶óÀ̳Ê/¹è¸®¾îÃþ, ½ºÆäÀ̼­ ¼º¸·, BEOL(back-end-of-line) °øÁ¤ÀÇ ÀúÀ¯ÀüÀ² Àý¿¬¸·¿¡¼­ ¿ìÀ§¸¦ Á¡Çϰí ÀÖ½À´Ï´Ù.

ÆÒ¾Æ¿ô ¿þÀÌÆÛ ·¹º§ ÆÐŰ¡(FOWLP)°ú ½Ç¸®ÄÜ °üÅëÀü±Ø(TSV)À» Æ÷ÇÔÇÑ Ã·´Ü ÆÐŰ¡Àº ¿þÀÌÆÛ ·¹º§ÀÇ Àý¿¬Ãþ°ú ±Ý¼ÓÈ­ ÃþÀÇ ½Å·Ú¼º ³ôÀº ¼º¸·À» ÇÊ¿ä·Î ÇÏ´Â ±Þ¼ºÀå ºÐ¾ß·Î ºÎ»óÇϰí ÀÖ½À´Ï´Ù. Áö¿ªº° ¼ö¿ä´Â ´ë¸¸, Çѱ¹, Áß±¹, Áß±¹, ÀϺ» µî ÁÖ¿ä ÆÄ¿îµå¸® ¹× ¸Þ¸ð¸® °øÀåÀÌ À§Ä¡ÇÑ ¾Æ½Ã¾ÆÅÂÆò¾çÀÌ ÁÖµµÇϰí ÀÖÀ¸¸ç, ·ÎÁ÷ ³ëµå ¹× AI °¡¼Ó±â¸¦ À§ÇÑ R&D ¹× ÆÄÀÏ·µ ±Ô¸ð »ý»êÀÌ ·ÎÁ÷ ³ëµå ¹× AI °¡¼Ó±â¸¦ À§ÇÑ °í»ç¾ç ÇÁ¸®Ä¿¼­ ¼ö¿ä¸¦ °ßÀÎÇÏ´Â ºÏ¹Ì¿Í À¯·´ÀÌ ±× µÚ¸¦ ÀÕ°í ÀÖ½À´Ï´Ù.

Áö¼Ó°¡´É¼º, ¼øµµ ±âÁØ, °ø±Þ¸Á ¾Ð·ÂÀÌ ½ÃÀå Çõ½ÅÀ» ¾î¶»°Ô Çü¼ºÇϰí Àִ°¡?

ȯ°æ ¹× ¾ÈÀü ±ÔÁ¤Àº ȯ°æ ģȭÀûÀÎ ÇÁ¸®Ä«»ç È­Çй°Áú(µ¶¼ºÀÌ ³·°í, Áõ±â¾ÐÀÌ ³·À¸¸ç, ÁõÂø È¿À²ÀÌ ³ôÀº)·ÎÀÇ ÀüȯÀ» ÃËÁøÇϰí ÀÖ½À´Ï´Ù. °ø±Þ¾÷üµéÀº ¹«ÇҷΰÕ, ºÒ¼Ò ÇÁ¸®, ±×¸®°í Ŭ¸°·ë ¾ÈÀü ÇÁ·ÎÅäÄݰú ģȯ°æ Á¦Á¶ ¸ñÇ¥¿¡ ºÎÇÕÇÏ´Â ·¹°Å½Ã ÇÁ¸®Ä¿¼­ÀÇ À§Ç輺ÀÌ ³·Àº ´ëüǰÀ» °³¹ßÇϰí ÀÖ½À´Ï´Ù. ÇÁ¸®Ä¿¼­ÀÇ ÀçȰ¿ë ¹× ¿ë±â ¹Ýȯ ÇÁ·Î±×·¥À» Æ÷ÇÔÇÑ ¼ö¸íÁֱ⠰ü¸®´Â ESG ÁöÇ¥¸¦ °³¼±ÇϰíÀÚ ÇÏ´Â ÆÕÀÇ ÁöÁö¸¦ ¹Þ°í ÀÖ½À´Ï´Ù.

±Ý¼Ó°ú »ê¼ÒÀÇ ¿À¿°Àº ¿øÀÚ ´ÜÀ§ÀÇ Ãþ¿¡¼­ ÀåÄ¡ÀÇ ¼º´É¿¡ ½É°¢ÇÑ ¿µÇâÀ» ¹ÌÄ¥ ¼ö Àֱ⠶§¹®¿¡ Ãʼøµµ¿Í ÃßÀû¼ºÀº ¿©ÀüÈ÷ ¾çº¸ÇÒ ¼ö ¾ø´Â °úÁ¦ÀÔ´Ï´Ù. Àü ¼¼°è ÆÕÀÇ »ý»ê·® Áõ°¡¿¡ µû¶ó ¾ÈÀüÇÏ°í °í¼øµµ ÇÁ¸®Ä«»ç°ø±Þ¿¡ ´ëÇÑ ¿ä±¸°¡ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ÁöÁ¤ÇÐÀû ±äÀå°ú ¿øÀÚÀç Á¦¾àÀ¸·Î ÀÎÇØ ÇÁ¸®Ä«»ç°ø±ÞÀÌ ¾î·Á¿öÁö¸é ¹ÝµµÃ¼ Á¦Á¶¾÷üµéÀº ÇÁ¸®Ä«»ç °ø±Þ¸ÁÀ» ÀÌÁß ¼Ò½ÌÇϰí ÇöÁöÈ­Çϸç Àç·á °úÇÐ ±â¾÷°úÀÇ ÇÁ¸®Ä«»ç °³¹ß ÆÄÆ®³Ê½Ê¿¡ ÅõÀÚÇÏ°Ô µÉ °ÍÀÔ´Ï´Ù.

ALD ¹× CVD Àü±¸Ã¼ ½ÃÀåÀÇ ¼ºÀå ¿äÀÎÀº ¹«¾ùÀΰ¡?

ALD ¹× CVD Àü±¸Ã¼ ½ÃÀåÀº ÷´Ü ³ëµåÀÇ ¹Ì¼¼È­, 3D µð¹ÙÀ̽ºÀÇ ´ëÁßÈ­, ¿øÀÚ ´ÜÀ§ÀÇ Á¤¹ÐÇÑ Àç·á ¼º¸·¿¡ ´ëÇÑ ¿ä±¸·Î ÀÎÇØ ±Þ¼ºÀåÇϰí ÀÖ½À´Ï´Ù. ÁÖ¿ä ¼ºÀå ÃËÁø¿äÀÎÀ¸·Î´Â Ãʹڸ· Á¦¾î¸¦ À§ÇÑ ALD Ȱ¿ë Áõ°¡, ½ÅÈï ±Ý¼Ó ¹× À¯Àüü¸¦ À§ÇÑ »õ·Î¿î Àü±¸Ã¼ ó¹æ, ¸Þ¸ð¸®, ·ÎÁ÷, ÷´Ü ÆÐŰ¡ ºÐ¾ß¿¡¼­ ¼ö¿ä Áõ°¡¸¦ µé ¼ö ÀÖ½À´Ï´Ù. ¹ÝµµÃ¼ Á¦Á¶°¡ È­ÇÐÀûÀ¸·Î ´õ¿í Á¤±³ÇØÁü¿¡ µû¶ó, ÇÁ¸®Ä«»ç´Â ¼º´É, ½Å·Ú¼º, °øÁ¤ Çõ½ÅÀ» ½ÇÇöÇÏ´Â °íºÎ°¡°¡Ä¡ Àο¡ÀÌºí·¯·Î ºÎ»óÇϰí ÀÖ½À´Ï´Ù.

ÇâÈÄ ½ÃÀåÀÇ ±ËÀûÀº ¼­ºê³ª³ë¹ÌÅÍ ³ëµå, ¼±ÅÃÀû ÁõÂø, ģȯ°æ Á¦Á¶ÀÇ ¿ä±¸¸¦ ÃæÁ·½Ã۱â À§ÇØ ÇÁ¸®Ä«»ç È­ÇÐÀÌ ¾ó¸¶³ª È¿°úÀûÀ¸·Î ÁøÈ­ÇÒ ¼ö ÀÖ´ÂÁö¿¡ ´Þ·Á ÀÖ½À´Ï´Ù. ¿øÀÚ ¼öÁØÀÇ °øÁ¤ Á¦¾î°¡ ¹ÝµµÃ¼ ¹ßÀüÀÇ ±âÃʰ¡ µÇ´Â °¡¿îµ¥, ´ÙÀ½ Ĩ ¼º´É Çõ½ÅÀÇ ¹°°áÀº ¸®¼Ò±×·¡Çǰ¡ ¾Æ´Ñ ÁõÂø Àü±¸Ã¼ÀÇ ºÐÀÚ ¼³°è¿¡ ÀÇÇØ °áÁ¤µÉ °ÍÀΰ¡?

ºÎ¹®

À¯Çü(½Ç¸®ÄÜ Àü±¸Ã¼, ƼŸ´½ Àü±¸Ã¼, Áö¸£ÄÚ´½ Àü±¸Ã¼, ±âŸ À¯Çü), ¿ëµµ(ÁýÀûȸ·Î Ĩ, Ç÷§ ÆÐ³Î µð½ºÇ÷¹ÀÌ, žçÀüÁö, ±âŸ ¿ëµµ)

Á¶»ç ´ë»ó ±â¾÷ ¿¹(ÃÑ 42°³»ç)

°ü¼¼ ¿µÇâ °è¼ö

Global Industry Analysts´Â º»»çÀÇ ±¹°¡, Á¦Á¶°ÅÁ¡, ¼öÃâÀÔ(¿ÏÁ¦Ç° ¹× OEM)À» ±â¹ÝÀ¸·Î ±â¾÷ÀÇ °æÀï·Â º¯È­¸¦ ¿¹ÃøÇß½À´Ï´Ù. ÀÌ·¯ÇÑ º¹ÀâÇÏ°í ´Ù¸éÀûÀÎ ½ÃÀå ¿ªÇÐÀº ÀÎÀ§ÀûÀÎ ¼öÀÍ¿ø°¡ Áõ°¡, ¼öÀͼº °¨¼Ò, °ø±Þ¸Á ÀçÆí µî ¹Ì½ÃÀû ¹× °Å½ÃÀû ½ÃÀå ¿ªÇÐ Áß¿¡¼­µµ ƯÈ÷ °æÀï»çµé¿¡°Ô ¿µÇâÀ» ¹ÌÄ¥ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

Global Industry Analysts´Â ¼¼°è ÁÖ¿ä ¼ö¼® ÀÌÄÚ³ë¹Ì½ºÆ®(1,4,949¸í), ½ÌÅ©ÅÊÅ©(62°³ ±â°ü), ¹«¿ª ¹× »ê¾÷ ´Üü(171°³ ±â°ü)ÀÇ Àü¹®°¡µéÀÇ ÀǰßÀ» ¸é¹ÐÈ÷ °ËÅäÇÏ¿© »ýŰ迡 ¹ÌÄ¡´Â ¿µÇâÀ» Æò°¡ÇÏ°í »õ·Î¿î ½ÃÀå Çö½Ç¿¡ ´ëÀÀÇϰí ÀÖ½À´Ï´Ù. ¸ðµç ÁÖ¿ä ±¹°¡ÀÇ Àü¹®°¡¿Í °æÁ¦ÇÐÀÚµéÀÌ °ü¼¼¿Í ±×°ÍÀÌ ÀÚ±¹¿¡ ¹ÌÄ¡´Â ¿µÇâ¿¡ ´ëÇÑ ÀǰßÀ» ÃßÀû Á¶»çÇß½À´Ï´Ù.

Global Industry Analysts´Â ÀÌ·¯ÇÑ È¥¶õÀÌ ÇâÈÄ 2-3°³¿ù ³»¿¡ ¸¶¹«¸®µÇ°í »õ·Î¿î ¼¼°è Áú¼­°¡ º¸´Ù ¸íÈ®ÇÏ°Ô È®¸³µÉ °ÍÀ¸·Î ¿¹»óÇϰí ÀÖÀ¸¸ç, Global Industry Analysts´Â ÀÌ·¯ÇÑ »óȲÀ» ½Ç½Ã°£À¸·Î ÃßÀûÇϰí ÀÖ½À´Ï´Ù.

2025³â 4¿ù: Çù»ó ´Ü°è

À̹ø 4¿ù º¸°í¼­¿¡¼­´Â °ü¼¼°¡ ¼¼°è ½ÃÀå Àüü¿¡ ¹ÌÄ¡´Â ¿µÇâ°ú Áö¿ªº° ½ÃÀå Á¶Á¤¿¡ ´ëÇØ ¼Ò°³ÇÕ´Ï´Ù. ´ç»çÀÇ ¿¹ÃøÀº °ú°Å µ¥ÀÌÅÍ¿Í ÁøÈ­ÇÏ´Â ½ÃÀå ¿µÇâ¿äÀÎÀ» ±â¹ÝÀ¸·Î ÇÕ´Ï´Ù.

2025³â 7¿ù: ÃÖÁ¾ °ü¼¼ Àç¼³Á¤

°í°´´Ôµé²²´Â °¢ ±¹°¡º° ÃÖÁ¾ ¸®¼ÂÀÌ ¹ßÇ¥µÈ ÈÄ 7¿ù¿¡ ¹«·á ¾÷µ¥ÀÌÆ® ¹öÀüÀ» Á¦°øÇØ µå¸³´Ï´Ù. ÃÖÁ¾ ¾÷µ¥ÀÌÆ® ¹öÀü¿¡´Â ¸íÈ®ÇÏ°Ô Á¤ÀÇµÈ °ü¼¼ ¿µÇ⠺м®ÀÌ Æ÷ÇԵǾî ÀÖ½À´Ï´Ù.

»óÈ£ ¹× ¾çÀÚ °£ ¹«¿ª°ú °ü¼¼ÀÇ ¿µÇ⠺м® :

¹Ì±¹ <>& Áß±¹ <>& ¸ß½ÃÄÚ <>& ij³ª´Ù <>&EU <>& ÀϺ» <>& Àεµ <>& ±âŸ 176°³±¹

¾÷°è ÃÖ°íÀÇ ÀÌÄÚ³ë¹Ì½ºÆ®: Global Industry AnalystsÀÇ Áö½Ä ±â¹ÝÀº ±¹°¡, ½ÌÅ©ÅÊÅ©, ¹«¿ª ¹× »ê¾÷ ´Üü, ´ë±â¾÷, ±×¸®°í ¼¼°è °è·® °æÁ¦ »óȲÀÇ Àü·Ê ¾ø´Â ÆÐ·¯´ÙÀÓ ÀüȯÀÇ ¿µÇâÀ» °øÀ¯ÇÏ´Â ºÐ¾ßº° Àü¹®°¡ µî °¡Àå ¿µÇâ·Â ÀÖ´Â ¼ö¼® ÀÌÄÚ³ë¹Ì½ºÆ® ±×·ìÀ» Æ÷ÇÔÇÑ 14,949¸íÀÇ ÀÌÄÚ³ë¹Ì½ºÆ®¸¦ ÃßÀûÇϰí ÀÖ½À´Ï´Ù. 16,491°³ ÀÌ»óÀÇ º¸°í¼­ ´ëºÎºÐ¿¡ ¸¶ÀϽºÅæ¿¡ ±â¹ÝÇÑ 2´Ü°è Ãâ½Ã ÀÏÁ¤ÀÌ Àû¿ëµÇ¾î ÀÖ½À´Ï´Ù.

¸ñÂ÷

Á¦1Àå Á¶»ç ¹æ¹ý

Á¦2Àå ÁÖ¿ä ¿ä¾à

Á¦3Àå ½ÃÀå ºÐ¼®

Á¦4Àå °æÀï

LSH
¿µ¹® ¸ñÂ÷

¿µ¹®¸ñÂ÷

Global ALD and CVD Precursor for Semiconductors Market to Reach US$2.1 Billion by 2030

The global market for ALD and CVD Precursor for Semiconductors estimated at US$1.4 Billion in the year 2024, is expected to reach US$2.1 Billion by 2030, growing at a CAGR of 7.1% over the analysis period 2024-2030. Silicon Precursor, one of the segments analyzed in the report, is expected to record a 5.4% CAGR and reach US$917.1 Million by the end of the analysis period. Growth in the Titanium Precursor segment is estimated at 8.9% CAGR over the analysis period.

The U.S. Market is Estimated at US$384.6 Million While China is Forecast to Grow at 10.8% CAGR

The ALD and CVD Precursor for Semiconductors market in the U.S. is estimated at US$384.6 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$439.0 Million by the year 2030 trailing a CAGR of 10.8% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 3.7% and 6.8% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 4.6% CAGR.

Global ALD and CVD Precursors for Semiconductors Market - Key Trends & Drivers Summarized

Why Are ALD and CVD Precursors Essential to Advanced Node Fabrication and 3D Device Architecture?

Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) are foundational thin-film technologies in semiconductor manufacturing, enabling precise, conformal coating of materials at the atomic scale. ALD/CVD precursors-organometallic or inorganic compounds that decompose or react at controlled temperatures-are critical in forming high-performance layers for gate dielectrics, metal interconnects, diffusion barriers, and patterning hardmasks. These films are central to transistor scaling, dielectric isolation, and packaging integration across logic, memory, and power devices.

As the industry transitions toward sub-5nm nodes and complex 3D architectures (FinFET, GAA, 3D NAND), the role of precursors has expanded from conventional deposition to atomic-level material engineering. Their molecular design directly influences film uniformity, step coverage, deposition temperature, and electrical properties-making them integral to achieving performance, yield, and scaling targets in semiconductor fabrication.

How Are Precursor Chemistry and Delivery Systems Evolving to Meet Advanced Deposition Requirements?

Material innovation in precursors is centered on improving thermal stability, volatility, and reactivity under process-specific conditions. Tailored ligands, metal-organic frameworks, and heteroleptic complexes are being engineered to deposit metals (e.g., Co, Ru, Ti, W) and dielectrics (e.g., HfO2, Al2O3, SiN) with high purity, uniformity, and atomic-level precision. Precursor formulations are increasingly customized for plasma-enhanced, low-temperature, or selective deposition use cases.

Equally important are advancements in precursor delivery systems-such as ultra-high purity (UHP) storage vessels, real-time flow controllers, and temperature-regulated vaporizers-that ensure stable and contamination-free delivery within high-vacuum environments. ALD processes benefit from pulsed precursor introduction with inert purging cycles, while CVD systems rely on continuous flow dynamics. Innovations in precursor synthesis and packaging are reducing defectivity risks and enabling repeatable, high-throughput deposition critical for high-volume manufacturing.

Which Semiconductor Applications and Market Segments Are Driving Growth in ALD and CVD Precursor Demand?

Logic and memory fabs are the largest consumers of ALD and CVD precursors, particularly for high-k/metal gate (HKMG), interlayer dielectrics (ILD), and advanced etch stop layers. The rise of 3D NAND and DRAM scaling has increased the need for high-aspect-ratio conformality in trench and stack architectures-where ALD is uniquely effective. CVD continues to dominate in liner/barrier layers, spacer deposition, and low-k dielectrics in BEOL (back-end-of-line) processes.

Advanced packaging, including fan-out wafer-level packaging (FOWLP) and through-silicon vias (TSVs), is emerging as a fast-growing segment, requiring reliable deposition of insulating and metallization layers at wafer-level scale. Regional demand is led by Asia-Pacific-home to major foundries and memory fabs in Taiwan, South Korea, China, and Japan-followed by North America and Europe, where R&D and pilot-scale production drive high-spec precursor demand for logic nodes and AI accelerators.

How Are Sustainability, Purity Standards, and Supply Chain Pressures Shaping Market Innovation?

Environmental and safety regulations are prompting a shift toward greener precursor chemistries-those with reduced toxicity, lower vapor pressure, and higher deposition efficiency. Suppliers are developing halogen-free, fluorine-free, and less hazardous alternatives to legacy precursors, aligned with cleanroom safety protocols and green manufacturing goals. Lifecycle management, including precursor recycling and container return programs, is gaining traction in fabs seeking to improve ESG metrics.

Ultra-high purity and traceability remain non-negotiable, as metal or oxygen contamination can severely impact device performance at atomic-scale layers. The need for secure, high-purity precursor supply is intensifying as global fabs ramp up production. Disruptions in precursor availability due to geopolitical tensions or raw material constraints have prompted semiconductor manufacturers to dual-source, localize precursor supply chains, and invest in precursor development partnerships with material science firms.

What Are the Factors Driving Growth in the ALD and CVD Precursors Market?

The ALD and CVD precursors market is expanding rapidly on the back of advanced node scaling, 3D device proliferation, and the need for atomically precise material deposition. Key growth drivers include increasing use of ALD for ultra-thin film control, new precursor formulations for emerging metals and dielectrics, and rising demand from memory, logic, and advanced packaging segments. As semiconductor manufacturing becomes more chemically sophisticated, precursors are emerging as high-value enablers of performance, reliability, and process innovation.

Looking ahead, the market’s trajectory will depend on how effectively precursor chemistries evolve to meet the demands of sub-nanometer nodes, selective deposition, and eco-efficient manufacturing. As atomic-level process control becomes the foundation of semiconductor advancement, could the next wave of innovation in chip performance be dictated not by lithography, but by the molecular design of deposition precursors?

SCOPE OF STUDY:

The report analyzes the ALD and CVD Precursor for Semiconductors market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Type (Silicon Precursor, Titanium Precursor, Zirconium Precursor, Other Types); Application (Integrated Circuit Chip, Flat Panel Display, Solar Photovoltaic, Other Applications)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 42 Featured) -

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by artificially increasing the COGS, reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

We are diligently following expert opinions of leading Chief Economists (14,949), Think Tanks (62), Trade & Industry bodies (171) worldwide, as they assess impact and address new market realities for their ecosystems. Experts and economists from every major country are tracked for their opinions on tariffs and how they will impact their countries.

We expect this chaos to play out over the next 2-3 months and a new world order is established with more clarity. We are tracking these developments on a real time basis.

As we release this report, U.S. Trade Representatives are pushing their counterparts in 183 countries for an early closure to bilateral tariff negotiations. Most of the major trading partners also have initiated trade agreements with other key trading nations, outside of those in the works with the United States. We are tracking such secondary fallouts as supply chains shift.

To our valued clients, we say, we have your back. We will present a simplified market reassessment by incorporating these changes!

APRIL 2025: NEGOTIATION PHASE

Our April release addresses the impact of tariffs on the overall global market and presents market adjustments by geography. Our trajectories are based on historic data and evolving market impacting factors.

JULY 2025 FINAL TARIFF RESET

Complimentary Update: Our clients will also receive a complimentary update in July after a final reset is announced between nations. The final updated version incorporates clearly defined Tariff Impact Analyses.

Reciprocal and Bilateral Trade & Tariff Impact Analyses:

USA <> CHINA <> MEXICO <> CANADA <> EU <> JAPAN <> INDIA <> 176 OTHER COUNTRIES.

Leading Economists - Our knowledge base tracks 14,949 economists including a select group of most influential Chief Economists of nations, think tanks, trade and industry bodies, big enterprises, and domain experts who are sharing views on the fallout of this unprecedented paradigm shift in the global econometric landscape. Most of our 16,491+ reports have incorporated this two-stage release schedule based on milestones.

COMPLIMENTARY PREVIEW

Contact your sales agent to request an online 300+ page complimentary preview of this research project. Our preview will present full stack sources, and validated domain expert data transcripts. Deep dive into our interactive data-driven online platform.

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

III. MARKET ANALYSIS

IV. COMPETITION

(ÁÖ)±Û·Î¹úÀÎÆ÷¸ÞÀÌ¼Ç 02-2025-2992 kr-info@giikorea.co.kr
¨Ï Copyright Global Information, Inc. All rights reserved.
PC¹öÀü º¸±â