¼¼°èÀÇ °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå Á¶»ç º¸°í¼ : »ê¾÷ ºÐ¼®, ±Ô¸ð, Á¡À¯À², ¼ºÀå, µ¿Çâ, ¿¹Ãø(2024-2032³â)
Global Gate-All-Around FET (GAAFET) Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2024 to 2032
°ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀåÀÇ ¼¼°è ¼ö¿ä´Â 2023³â 5,311¸¸ ´Þ·¯¿¡¼ 2032³â¿¡´Â 4¾ï 9,055¸¸ ´Þ·¯ ±Ùó ±Ô¸ð¿¡ À̸¦ °ÍÀ¸·Î ÃßÁ¤µÇ¸ç, ¿¹Ãø ±â°£ µ¿¾È º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR) 28.02%¸¦ ³ªÅ¸³¾ Àü¸ÁÀÔ´Ï´Ù.
°ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET)´Â ¹ÝµµÃ¼ µð¹ÙÀ̽º¿¡ »ç¿ëµÇ´Â °í±Þ Æ®·£Áö½ºÅÍ ¾ÆÅ°ÅØÃ³ÀÔ´Ï´Ù. ±âÁ¸ÀÇ FinFET°ú ´Þ¸® GAAFETÀº ä³ÎÀ» µÑ·¯½Îµµ·Ï °ÔÀÌÆ®¸¦ ¹èÄ¡ÇÏ¿© Àü·ù È帧À» º¸´Ù ÀûÀýÇÏ°Ô Á¦¾îÇÏ°í ´©¼³À» ÁÙÀÏ ¼ö ÀÖ½À´Ï´Ù. ÀÌ ¼³°è´Â ¼º´É°ú ¿¡³ÊÁö È¿À²À» Çâ»ó½Ã۰í Â÷¼¼´ë ÁýÀû ȸ·Î ¹× °í¼º´É ÄÄÇ»ÆÃ ¿ëµµ¿¡ ÀûÇÕÇÕ´Ï´Ù. GAAFET ±â¼úÀº Æ®·£Áö½ºÅͰ¡ ³ª³ë¹ÌÅÍ ½ºÄÉÀÏ·Î ¹Ì¼¼ÈµÇ´Â °¡¿îµ¥ ¹«¾îÀÇ ¹ýÄ¢À» °è¼ÓÇϱâ À§ÇØ ¸Å¿ì Áß¿äÇÕ´Ï´Ù.
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°ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀåÀº ÁÖ·Î °í¼º´É ÄÄÇ»ÆÃ°ú ¼ÒºñÀÚ¿ë ÀüÀÚ±â±â¿¡¼ ÷´Ü ¹ÝµµÃ¼ ±â¼ú ¼ö¿ä¿¡ ÀÇÇØ °ßÀεǰí ÀÖ½À´Ï´Ù. º¸´Ù ÀÛ°í, ºü¸£°í, ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº Æ®·£Áö½ºÅÍ¿¡ ´ëÇÑ ¿ä±¸°¡ Áõ°¡ÇÔ¿¡ µû¶ó, GAAFETÀº ±âÁ¸ FinFET¿¡ ºñÇØ Á¤Àü±â Á¦¾î°¡ ¶Ù¾î³ª ´©¼³ Àü·ù°¡ °¨¼ÒµÇ¾î ½ÇÇà °¡´ÉÇÑ ¼Ö·ç¼ÇÀ» Á¦°øÇÕ´Ï´Ù. ±âÀçµÇ¾î ÀÖ½À´Ï´Ù. ¹ÝµµÃ¼ »ê¾÷¿¡¼ ¹«¾î ¹ýÄ¢ÀÇ Áö¼ÓÀûÀÎ ÃßÁøÀº GAAFET ±â¼úÀÇ Ã¤ÅÃÀ» µÞ¹ÞħÇϰí Â÷¼¼´ë ÁýÀû ȸ·ÎÀÇ °³¹ßÀ» °¡´ÉÇÏ°Ô ÇÕ´Ï´Ù. ¶ÇÇÑ ¸Ó½Å·¯´×, ÀΰøÁö´É, »ç¹° ÀÎÅÍ³Ý ¿ëµµ¿¡ ´ëÇÑ ¼ö¿ä Áõ°¡´Â °í¼º´É Æ®·£Áö½ºÅ͸¦ ÇÊ¿ä·Î ÇÏ¸ç °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀåÀ» °ßÀÎÇϰí ÀÖ½À´Ï´Ù.
±â¼ú Áøº¸¿Í ¹ÝµµÃ¼ R&D¿¡ ´ëÇÑ ¸¹Àº ÅõÀÚ´Â GAAFET ±â¼úÀÇ ¼ºÀå¿¡ ±â¿©Çϰí ÀÖ½À´Ï´Ù. ¹ÝµµÃ¼ ¾÷°è°æÀï ±¸µµÀº °¢ ȸ»ç°¡ ±â¼úÀû ¿ìÀ§¿Í ½ÃÀå ¸®´õ½Ê ȹµæ¿¡ ¸ÅÁøÇϰí ÀÖÀ¸¸ç, GAAFETÀÇ Ã¤¿ëÀ» ´õ¿í °¡¼ÓÈÇϰí ÀÖ½À´Ï´Ù. °Ô´Ù°¡ ¹ÝµµÃ¼ Á¦Á¶¾÷ü¿Í ¿¬±¸±â°üÀÇ Çù·Â°ú ÆÄÆ®³Ê½ÊÀº GAAFET ±â¼úÀ» Áøº¸½ÃŰ°í ±× ÀÀ¿ëÀ» È®´ëÇϴµ¥ ÀÖ¾î¼ ¸Å¿ì Áß¿äÇÕ´Ï´Ù. ±×·¯³ª R&DÀÇ ³ôÀº ºñ¿ë°ú ¾ç»ê°ú °ü·ÃµÈ ±â¼úÀû °úÁ¦´Â ¾ÕÀ¸·Î ¸î ³âµ¿¾È °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET)ÀÇ ¼ºÀåÀ» ¾î·Æ°Ô ¸¸µé ¼ö ÀÖ½À´Ï´Ù.
Á¶»ç º¸°í¼´Â Æ÷ÅÍÀÇ Five Force ¸ðµ¨, ½ÃÀå ¸Å·Â ºÐ¼® ¹× ¹ë·ùüÀÎ ºÐ¼®À» ´Ù·ì´Ï´Ù. ÀÌ·¯ÇÑ µµ±¸´Â ¾÷°èÀÇ ±¸Á¶¸¦ ¸íÈ®ÇÏ°Ô ÆÄ¾ÇÇÏ°í ¼¼°è ¼öÁØ¿¡¼ °æÀïÀÇ ¸Å·ÂÀ» Æò°¡ÇÏ´Â µ¥ µµ¿òÀÌ µË´Ï´Ù. ¶ÇÇÑ, ÀÌ·¯ÇÑ ÅøÀº °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå¿¡¼ °¢ ºÎ¹®À» Á¾ÇÕÀûÀ¸·Î Æò°¡ÇÒ ¼ö ÀÖ½À´Ï´Ù. °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) »ê¾÷ÀÇ ¼ºÀå°ú µ¿ÇâÀº ÀÌ Á¶»ç¿¡ ´ëÇÑ Àü¹ÝÀûÀÎ Á¢±Ù¹ýÀ» ¼³¸íÇÕ´Ï´Ù.
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°ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå º¸°í¼ÀÇ ÀÌ ¼½¼Ç¿¡¼´Â ±¹°¡º° ¹× Áö¿ªº° ºÎ¹®¿¡ ´ëÇÑ ÀÚ¼¼ÇÑ µ¥ÀÌÅ͸¦ Á¦°øÇÏ¿© Àü·« ´ã´çÀÚ°¡ ÇâÈÄ ºñÁî´Ï½º ±âȸ¿Í ÇÔ²² °¢ Á¦Ç° ¹× ¼ºñ½ºÀÇ ´ë»óÃþÀ» È®ÀÎÇÏ´Â µ¥ µµ¿òÀÌ µË´Ï´Ù.
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- ÀιöÅÍ¿Í UPS
- ¼ÒºñÀÚ ÀÏ·ºÆ®·Î´Ð½º
- »ê¾÷¿ë ½Ã½ºÅÛ
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Á¦2Àå ÁÖ¿ä ¿ä¾à
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- ½ÃÀå ÇöȲ
Á¦3Àå °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) : »ê¾÷ ºÐ¼®
- ¼Ò°³ : ½ÃÀå ¿ªÇÐ
- ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ
- ½ÃÀå ¼ºÀå ¾ïÁ¦¿äÀÎ
- ½ÃÀå ±âȸ
- ¾÷°è µ¿Çâ
- Porter's Five Forces ºÐ¼®
- ½ÃÀåÀÇ ¸Å·Â ºÐ¼®
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Á¦5Àå °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå ºÐ¼® : ¿ëµµº°
- ¿ëµµº° °³¿ä
- ¿ëµµº° °ú°Å,¿¹Ãø µ¥ÀÌÅÍ ºÐ¼®
- ÀιöÅÍ¿Í UPS
- ¼ÒºñÀÚ ÀÏ·ºÆ®·Î´Ð½º
- »ê¾÷¿ë ½Ã½ºÅÛ
Á¦6Àå °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå ºÐ¼® : À¯Çüº°
- À¯Çüº° °³¿ä
- À¯Çüº° °ú°Å,¿¹Ãø µ¥ÀÌÅÍ ºÐ¼®
- 2nm
- 3nm
Á¦7Àå °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå ºÐ¼® : Áö¿ªº°
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- ¼Ò°³
- ºÏ¹Ì ¸ÅÃ⠺м®
- °³¿ä, ½ÇÀû°ú ¿¹Ãø
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- °³¿ä, ½ÇÀû°ú ¿¹Ãø
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- °³¿ä, ½ÇÀû°ú ¿¹Ãø
- ¾Æ½Ã¾ÆÅÂÆò¾ç : ºÎ¹®º°
- ¾Æ½Ã¾ÆÅÂÆò¾ç : ±¹°¡º°
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- °³¿ä, ½ÇÀû°ú ¿¹Ãø
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Á¦8Àå °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ±â¾÷°æÀï ±¸µµ
- °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå FET(GAAFET) ½ÃÀå °æÀï
- ÆÄÆ®³Ê½Ê/Á¦ÈÞ/ÇÕÀÇ
- ÇÕº´°ú Àμö
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- ÁÖ¿ä ±â¾÷ÀÇ ½ÃÀå Á¡À¯À² ºÐ¼®
- ½ÃÀå ÁýÁßµµ
- Nvidia
- NXP Semiconductors
- GlobalFoundries
- Intel Corporation
- ASML Holding NV
- Micron Technology
- Taiwan Semiconductor Manufacturing Company(TSMC)
- Texas Instruments
- Applied Materials
- Qualcomm
- SK Hynix
- IBM
- Advanced Micro Devices(AMD)
- Samsung Electronics
- Broadcom Inc.
BJH
The global demand for Gate-All-Around FET (GAAFET) Market is presumed to reach the market size of nearly USD 490.55 Million by 2032 from USD 53.11 Million in 2023 with a CAGR of 28.02% under the study period 2024-2032.
Gate-All-Around FET (GAAFET) is an advanced transistor architecture used in semiconductor devices. Unlike traditional FinFETs, GAAFETs have a gate surrounding the channel, providing better control over the current flow and reducing leakage. This design improves performance and energy efficiency, making it suitable for next-generation integrated circuits and high-performance computing applications. GAAFET technology is crucial for continuing Moore's Law as transistors shrink to nanometer scales.
MARKET DYNAMICS
The market for gate-all-around FET (GAAFET) is primarily driven by the demand for advanced semiconductor technologies in high-performance computing and consumer electronics. As the need for smaller, faster, and more energy-efficient transistors grows, GAAFETs provide a viable solution by offering better electrostatic control and reduced leakage compared to traditional FinFETs. The continuous push for Moore's Law in the semiconductor industry fuels the adoption of GAAFET technology, enabling the development of next-generation integrated circuits. Furthermore, the increasing demand for machine learning, artificial intelligence, and Internet of Things applications necessitates high-performance transistors, driving the gate-all-around FET (GAAFET)market.
Technological advancements and significant investments in semiconductor research and development also contribute to the growth of GAAFET technology. The competitive landscape of the semiconductor industry, with companies striving to achieve technological superiority and market leadership, further accelerates the adoption of GAAFETs. Additionally, collaborations and partnerships between semiconductor manufacturers and research institutions are crucial in advancing GAAFET technology and expanding its applications. However, the high cost of research and development and the technical challenges associated with mass production may challenge the growth of gate-all-around FET (GAAFET) in the coming years.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of Gate-All-Around FET (GAAFET). The growth and trends of Gate-All-Around FET (GAAFET) industry provide a holistic approach to this study.
MARKET SEGMENTATION
This section of the Gate-All-Around FET (GAAFET) market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
By Application
- Inverters & UPS
- Consumer Electronics
- Industrial Systems
By Type
REGIONAL ANALYSIS
This section covers the regional outlook, which accentuates current and future demand for the Gate-All-Around FET (GAAFET) market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the Gate-All-Around FET (GAAFET) market include Nvidia, NXP Semiconductors, GlobalFoundries, Intel Corporation, ASML Holding NV, Micron Technology, Taiwan Semiconductor Manufacturing Company (TSMC), Texas Instruments, Applied Materials, Qualcomm, SK Hynix, IBM, Advanced Micro Devices (AMD), Samsung Electronics, Broadcom Inc., . This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
In case you have any custom requirements, do write to us. Our research team can offer a customized report as per your need.
TABLE OF CONTENTS
1. PREFACE
- 1.1. Report Description
- 1.1.1 Objective
- 1.1.2 Target Audience
- 1.1.3 Unique Selling Proposition (USP) & offerings
- 1.2. Research Scope
- 1.3. Research Methodology
- 1.3.1 Market Research Process
- 1.3.2 Market Research Methodology
2. EXECUTIVE SUMMARY
- 2.1. Highlights of Market
- 2.2. Global Market Snapshot
3. GATE-ALL-AROUND FET (GAAFET) - INDUSTRY ANALYSIS
- 3.1. Introduction - Market Dynamics
- 3.2. Market Drivers
- 3.3. Market Restraints
- 3.4. Opportunities
- 3.5. Industry Trends
- 3.6. Porter's Five Force Analysis
- 3.7. Market Attractiveness Analysis
- 3.7.1 Market Attractiveness Analysis By Application
- 3.7.2 Market Attractiveness Analysis By Type
- 3.7.3 Market Attractiveness Analysis By Region
4. VALUE CHAIN ANALYSIS
- 4.1. Value Chain Analysis
- 4.2. Raw Material Analysis
- 4.2.1 List of Raw Materials
- 4.2.2 Raw Material Manufactures List
- 4.2.3 Price Trend of Key Raw Materials
- 4.3. List of Potential Buyers
- 4.4. Marketing Channel
- 4.4.1 Direct Marketing
- 4.4.2 Indirect Marketing
- 4.4.3 Marketing Channel Development Trend
5. GLOBAL GATE-ALL-AROUND FET (GAAFET) MARKET ANALYSIS BY APPLICATION
- 5.1. Overview By Application
- 5.2. Historical and Forecast Data Analysis By Application
- 5.3. Inverters & UPS Historic and Forecast Sales By Regions
- 5.4. Consumer Electronics Historic and Forecast Sales By Regions
- 5.5. Industrial Systems Historic and Forecast Sales By Regions
6. GLOBAL GATE-ALL-AROUND FET (GAAFET) MARKET ANALYSIS BY TYPE
- 6.1. Overview By Type
- 6.2. Historical and Forecast Data Analysis By Type
- 6.3. 2nm Historic and Forecast Sales By Regions
- 6.4. 3nm Historic and Forecast Sales By Regions
7. GLOBAL GATE-ALL-AROUND FET (GAAFET) MARKET ANALYSIS BY GEOGRAPHY
- 7.1. Regional Outlook
- 7.2. Introduction
- 7.3. North America Sales Analysis
- 7.3.1 Overview, Historic and Forecast Data Sales Analysis
- 7.3.2 North America By Segment Sales Analysis
- 7.3.3 North America By Country Sales Analysis
- 7.3.4 United States Sales Analysis
- 7.3.5 Canada Sales Analysis
- 7.3.6 Mexico Sales Analysis
- 7.4. Europe Sales Analysis
- 7.4.1 Overview, Historic and Forecast Data Sales Analysis
- 7.4.2 Europe By Segment Sales Analysis
- 7.4.3 Europe By Country Sales Analysis
- 7.4.4 United Kingdom Sales Analysis
- 7.4.5 France Sales Analysis
- 7.4.6 Germany Sales Analysis
- 7.4.7 Italy Sales Analysis
- 7.4.8 Russia Sales Analysis
- 7.4.9 Rest Of Europe Sales Analysis
- 7.5. Asia Pacific Sales Analysis
- 7.5.1 Overview, Historic and Forecast Data Sales Analysis
- 7.5.2 Asia Pacific By Segment Sales Analysis
- 7.5.3 Asia Pacific By Country Sales Analysis
- 7.5.4 China Sales Analysis
- 7.5.5 India Sales Analysis
- 7.5.6 Japan Sales Analysis
- 7.5.7 South Korea Sales Analysis
- 7.5.8 Australia Sales Analysis
- 7.5.9 South East Asia Sales Analysis
- 7.5.10 Rest Of Asia Pacific Sales Analysis
- 7.6. Latin America Sales Analysis
- 7.6.1 Overview, Historic and Forecast Data Sales Analysis
- 7.6.2 Latin America By Segment Sales Analysis
- 7.6.3 Latin America By Country Sales Analysis
- 7.6.4 Brazil Sales Analysis
- 7.6.5 Argentina Sales Analysis
- 7.6.6 Peru Sales Analysis
- 7.6.7 Chile Sales Analysis
- 7.6.8 Rest of Latin America Sales Analysis
- 7.7. Middle East & Africa Sales Analysis
- 7.7.1 Overview, Historic and Forecast Data Sales Analysis
- 7.7.2 Middle East & Africa By Segment Sales Analysis
- 7.7.3 Middle East & Africa By Country Sales Analysis
- 7.7.4 Saudi Arabia Sales Analysis
- 7.7.5 UAE Sales Analysis
- 7.7.6 Israel Sales Analysis
- 7.7.7 South Africa Sales Analysis
- 7.7.8 Rest Of Middle East And Africa Sales Analysis
8. COMPETITIVE LANDSCAPE OF THE GATE-ALL-AROUND FET (GAAFET) COMPANIES
- 8.1. Gate-All-Around FET (GAAFET) Market Competition
- 8.2. Partnership/Collaboration/Agreement
- 8.3. Merger And Acquisitions
- 8.4. New Product Launch
- 8.5. Other Developments
9. COMPANY PROFILES OF GATE-ALL-AROUND FET (GAAFET) INDUSTRY
- 9.1. Top Companies Market Share Analysis
- 9.2. Market Concentration Rate
- 9.3. Nvidia
- 9.3.1 Company Overview
- 9.3.2 Company Revenue
- 9.3.3 Products
- 9.3.4 Recent Developments
- 9.4. NXP Semiconductors
- 9.4.1 Company Overview
- 9.4.2 Company Revenue
- 9.4.3 Products
- 9.4.4 Recent Developments
- 9.5. GlobalFoundries
- 9.5.1 Company Overview
- 9.5.2 Company Revenue
- 9.5.3 Products
- 9.5.4 Recent Developments
- 9.6. Intel Corporation
- 9.6.1 Company Overview
- 9.6.2 Company Revenue
- 9.6.3 Products
- 9.6.4 Recent Developments
- 9.7. ASML Holding NV
- 9.7.1 Company Overview
- 9.7.2 Company Revenue
- 9.7.3 Products
- 9.7.4 Recent Developments
- 9.8. Micron Technology
- 9.8.1 Company Overview
- 9.8.2 Company Revenue
- 9.8.3 Products
- 9.8.4 Recent Developments
- 9.9. Taiwan Semiconductor Manufacturing Company (TSMC)
- 9.9.1 Company Overview
- 9.9.2 Company Revenue
- 9.9.3 Products
- 9.9.4 Recent Developments
- 9.10. Texas Instruments
- 9.10.1 Company Overview
- 9.10.2 Company Revenue
- 9.10.3 Products
- 9.10.4 Recent Developments
- 9.11. Applied Materials
- 9.11.1 Company Overview
- 9.11.2 Company Revenue
- 9.11.3 Products
- 9.11.4 Recent Developments
- 9.12. Qualcomm
- 9.12.1 Company Overview
- 9.12.2 Company Revenue
- 9.12.3 Products
- 9.12.4 Recent Developments
- 9.13. SK Hynix
- 9.13.1 Company Overview
- 9.13.2 Company Revenue
- 9.13.3 Products
- 9.13.4 Recent Developments
- 9.14. IBM
- 9.14.1 Company Overview
- 9.14.2 Company Revenue
- 9.14.3 Products
- 9.14.4 Recent Developments
- 9.15. Advanced Micro Devices (AMD)
- 9.15.1 Company Overview
- 9.15.2 Company Revenue
- 9.15.3 Products
- 9.15.4 Recent Developments
- 9.16. Samsung Electronics
- 9.16.1 Company Overview
- 9.16.2 Company Revenue
- 9.16.3 Products
- 9.16.4 Recent Developments
- 9.17. Broadcom Inc.
- 9.17.1 Company Overview
- 9.17.2 Company Revenue
- 9.17.3 Products
- 9.17.4 Recent Developments
Note - In company profiling, financial details and recent developments are subject to availability or might not be covered in the case of private companies