¼¼°èÀÇ GaN ±âÁú ½ÃÀå : ¼ºÀå, Àü¸Á, °æÀï ºÐ¼®(2024³â-2032³â)
GaN Substrate Market - Growth, Future Prospects and Competitive Analysis, 2024 - 2032
»óǰÄÚµå : 1469309
¸®¼­Ä¡»ç : Acute Market Reports
¹ßÇàÀÏ : 2024³â 04¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 117 Pages
 ¶óÀ̼±½º & °¡°Ý (ºÎ°¡¼¼ º°µµ)
US $ 4,500 £Ü 6,256,000
PDF (Single User License) help
PDF º¸°í¼­¸¦ 1¸í¸¸ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμ⠰¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 6,500 £Ü 9,036,000
PDF (Multi User License) help
PDF º¸°í¼­¸¦ µ¿ÀÏ »ç¾÷Àå¿¡¼­ 10¸í±îÁö ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμ⠰¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 9,000 £Ü 12,512,000
PDF (Enterprise License) help
PDF º¸°í¼­¸¦ µ¿ÀÏ ±â¾÷ÀÇ ¸ðµç ºÐÀÌ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμ⠰¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.


Çѱ۸ñÂ÷

GaN ±âÁú ½ÃÀåÀº 2024³âºÎÅÍ 2032³â±îÁöÀÇ ¿¹Ãø ±â°£ µ¿¾È º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR) 11.2%·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ¾Æ½Ã¾ÆÅÂÆò¾çÀº R&D¿¡ ´ëÇÑ ¸¹Àº ÅõÀÚ, ±â¼ú Áøº¸ ÃËÁø ¹× GaN ±âÁúÀÇ ±¤¹üÀ§ÇÑ Ã¤ÅÃÀ¸·Î °¡Àå ¼öÀͼºÀÌ ³ôÀº Áö¿ªÀÌ µÇ¾ú½À´Ï´Ù. ºÏ¹Ì¿Í À¯·´Àº ¹ÝµµÃ¼ ¹× ÀüÀÚ »ê¾÷¿¡¼­ °ß°íÇÑ ¹ßÆÇÀ» ¹Ý¿µÇÏ¿© ½ÃÀå ¼öÀÍ¿¡ Å©°Ô ±â¿©Çϰí ÀÖ½À´Ï´Ù. Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«´Â ²ÙÁØÇÑ ¼ºÀåÀ» º¸À̰í ÀÖÀ¸¸ç ½ÅÈï »ê¾÷ ºÐ¾ß¿¡¼­ GaN ±âÁúÀÇ Àû¿ë È®´ë¸¦ º¸¿©ÁÝ´Ï´Ù. °æÀï µ¿ÇâÀº Cree Inc., Sumitomo Electric Industry, Aixtron SE¿Í °°Àº ÁÖ¿ä ±â¾÷ÀÇ ÀÌÁ¡À» °­Á¶Çϰí Á¦Ç° Çõ½Å, Àü·«Àû ÆÄÆ®³Ê½Ê ¹× M&AÀÇ Á߿伺À» °­Á¶ÇÕ´Ï´Ù. Àüü ½ÃÀå Àü¸ÁÀº ±â¼ú ¹ßÀü, °øµ¿ ÀÌ´Ï¼ÅÆ¼ºê ¹× ÁÖ¿ä ±â¾÷ ½ÃÀå ¸®´õ½Ê Ãß±¸¿¡ ÀÇÇØ Çü¼ºµÇ´Â ¿ªµ¿Àû ÀÎ »óȲÀ» Ư¡À¸·ÎÇÕ´Ï´Ù.

ÁÖ¿ä ½ÃÀå ¼ºÀå ÃËÁø¿äÀÎ

ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½ºÀÇ ±Þ¼ºÀå

GaN ±âÁú ½ÃÀåÀ» È«º¸ÇÏ´Â ÁÖ¿ä ¿äÀÎ Áß Çϳª´Â ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º ¿ëµµÀÇ ±Þ¼ÓÇÑ È®´ëÀÔ´Ï´Ù. GaN ±âÁúÀº ³ôÀº ÀüÀÚ À̵¿µµ¿Í ¿­ ¾ÈÁ¤¼º°ú °°Àº ¿ì¼öÇÑ ¼º´É Ư¼ºÀ» °¡Áø Àü·Â ÀåÄ¡¸¦ °³¹ßÇÏ´Â µ¥ ÇʼöÀûÀÔ´Ï´Ù. ƯÈ÷ Àü±âÀÚµ¿Â÷, Àç»ý°¡´É¿¡³ÊÁö½Ã½ºÅÛ, Àü¿ø µîÀÇ ¿ëµµ¿¡ À־ Àü·ÂÈ¿À²ÀÌ ³ôÀº ÀüÀڽýºÅÛ¿¡ ´ëÇÑ ¼ö¿ä°¡ ³ô¾ÆÁö°í ÀÖ´Â °ÍÀÌ GaN±âÆÇÀÇ Ã¤¿ë¿¡ ¹ÚÂ÷¸¦ °¡Çϰí ÀÖ½À´Ï´Ù. ±× Áõ°Å´Â ´Ù¾çÇÑ »ê¾÷¿¡¼­ GaN ±â¹Ý ÆÄ¿ö µð¹ÙÀ̽ºÀÇ µµÀÔÀÌ È®´ëµÇ°í ÀÖÀ¸¸ç ¿¡³ÊÁö È¿À²À» ³ôÀ̰í Áö¼Ó °¡´ÉÇÑ ±â¼ú ¼Ö·ç¼Ç¿¡ ±â¿©ÇÏ´Â Àç·áÀÇ ´É·ÂÀ» º¸¿©ÁÝ´Ï´Ù.

°íÁÖÆÄ RF µð¹ÙÀ̽º ¼ö¿ä Áõ°¡

½ÃÀåÀº °íÁÖÆÄ ¹«¼± Á֯ļö(RF) µð¹ÙÀ̽º ¼ö¿ä Áõ°¡¿¡ ÀÇÇØ ´õ¿í °ßÀεǰí ÀÖ½À´Ï´Ù. GaN ±âÁúÀº Ź¿ùÇÑ RF Ư¼ºÀ» ³ªÅ¸³»¸ç Åë½Å, Ç×°ø¿ìÁÖ ¹× ¹æÀ§ ºÐ¾ß¿¡¼­ÀÇ ÀÀ¿ë¿¡ ÇʼöÀûÀÔ´Ï´Ù. ÀÌ ÃßÁø·ÂÀ» µÞ¹ÞħÇÏ´Â Áõ°Å´Â Åë½Å ÀÎÇÁ¶ó, ·¹ÀÌ´õ ½Ã½ºÅÛ ¹× À§¼º Åë½Å¿¡¼­ GaN ±â¹Ý RF µð¹ÙÀ̽ºÀÇ µµÀÔÀÌ Áõ°¡Çϰí ÀÖ´Ù´Â Á¡¿¡¼­µµ ºÐ¸íÇÕ´Ï´Ù. GaN ±âÁúÀº ¾ÈÁ¤¼ºÀ» À¯ÁöÇϸ鼭 ´õ ³ôÀº Á֯ļö¿¡¼­ µ¿ÀÛÇÒ ¼ö Àֱ⠶§¹®¿¡ Â÷¼¼´ë RF ±â¼ú¿¡ ÀûÇÕÇÑ ¼±ÅÃÀ¸·Î ÀÚ¸®¸Å±èÇÏ¿© ½ÃÀå ¼ºÀåÀ» °¡¼ÓÇϰí ÀÖ½À´Ï´Ù.

±¤ÀüÀÚÀÇ ÀÀ¿ë ºÐ¾ß È®´ë

GaN ±âÁúÀº ±¤ÀüÀÚ ÀÀ¿ë ºÐ¾ß¿¡¼­ ³Î¸® »ç¿ëµÇ°í ÀÖÀ¸¸ç ½ÃÀå È®´ëÀÇ Áß¿äÇÑ ÃËÁø¿äÀÎÀÌ µÇ¾ú½À´Ï´Ù. °íÈÖµµ LED ¹× ·¹ÀÌÀú ´ÙÀÌ¿ÀµåÀÇ °³¹ßÀº GaN ±âÁúÀÇ ¿ì¼öÇÑ Æ¯¼º¿¡ ÀÇÁ¸ÇÕ´Ï´Ù. ÀÌ ÃßÁø·ÂÀ» µÞ¹ÞħÇÏ´Â Áõ°Å´Â µð½ºÇ÷¹ÀÌ, Â÷·® žÀç Á¶¸í, ÀÇ·á¿ë À̹ÌÁö ó¸® µîÀÇ »ê¾÷¿¡¼­ GaN ±â¹Ý ±¤ÀüÀÚ µð¹ÙÀ̽º°¡ ³Î¸® ä¿ëµÇ°í ÀÖ´Â °ÍÀ¸·Î ³ªÅ¸³µ½À´Ï´Ù. ±¤´ë¿ª °¸°ú ±¤ÇÐ Åõ¸í¼ºÀÇ µ¶Æ¯ÇÑ Á¶ÇÕÀ¸·Î GaN ±âÁúÀº ±¤ÀüÀÚÀÇ Çõ½ÅÀ» ÃßÁøÇϱâ À§ÇÑ ±âº» Àç·á·Î ÀÚ¸®¸Å±èÇϰí ÀÖ½À´Ï´Ù.

¾ïÁ¦: °ø±Þ¸Á Á¦¾à ¹× »ý»ê ºñ¿ë

GaN ±âÁú ½ÃÀåÀÌ Å©°Ô ¼ºÀåÇÏ´Â ¹Ý¸é, ÇöÀúÇÑ ¾ïÁ¦¿äÀÎÀº °ø±Þ¸ÁÀÇ Á¦¾à°ú »ý»ê ºñ¿ë¿¡ ÀÖ½À´Ï´Ù. °íǰÁú GaN ±âÁúÀ» »ý»êÇÏ·Á¸é º¹ÀâÇÑ Á¦Á¶ °øÁ¤ÀÌ ÇÊ¿äÇÏ¸ç »ý»ê ºñ¿ëÀÌ »ó½ÂÇÕ´Ï´Ù. ÀÌ Á¦¾àÀº GaN ±âÁúÀÇ ÀϰüµÇ°í ºñ¿ë È¿À²ÀûÀÎ °ø±Þ¸ÁÀ» À¯ÁöÇϱâ À§ÇØ Á¦Á¶¾÷ü°¡ Á÷¸éÇÏ´Â °úÁ¦¿¡ ³ªÅ¸³³´Ï´Ù. ÀÌ·¯ÇÑ Á¦¾àÀº ƯÈ÷ °¡°Ý¿¡ ¹Î°¨ÇÑ »ê¾÷¿¡¼­ ½ÃÀå ¼ºÀå¿¡ ¿µÇâÀ» ¹ÌÄ¥ ¼ö ÀÖÀ¸¸ç »ý»ê È¿À²°ú ºñ¿ë °úÁ¦¸¦ ÇØ°áÇϱâ À§ÇÑ Àü·«Àû ¼Ö·ç¼ÇÀÌ ÇÊ¿äÇÕ´Ï´Ù.

ÁÖ¿ä ½ÃÀå ¼¼ºÐÈ­

À¯Çüº° ½ÃÀå

GaN ±âÁú ½ÃÀåÀº ´Ù¾çÇÑ À¯ÇüÀ» ³ªÅ¸³»¸ç, °¢°¢Àº ¼öÀͰú ¿¬°£ Æò±Õ ¼ºÀå·ü(º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR))¿¡ Å©°Ô ±â¿©Çϰí ÀÖ½À´Ï´Ù. 2023³â, GaN on Sapphire´Â ³ôÀº °áÁ¤ ǰÁú°ú ¿­ ¾ÈÁ¤¼ºÀ» ¿ä±¸ÇÏ´Â ÀÀ¿ë ºÐ¾ß¿¡ ±¤¹üÀ§ÇÑ Ã¤ÅÃÀ¸·Î °¡Àå ³ôÀº ¼öÀÍÀ» âÃâÇÏ´Â À¯ÇüÀ¸·Î ºÎ»óÇß½À´Ï´Ù. µ¿½Ã¿¡ GaN on Diamond´Â 2024³âºÎÅÍ 2032³â±îÁö ¿¹Ãø ±â°£ µ¿¾È ÃÖ°íÀÇ º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR)À» ³ªÅ¸³Â½À´Ï´Ù. À̰ÍÀº ÀÌ Àç·áÀÇ Å¹¿ùÇÑ ¿­Àüµµ¼º°ú ³»±¸¼ºÀ» µÞ¹ÞħÇÏ¸ç ±î´Ù·Î¿î ȯ°æ¿¡ ÀÌ»óÀûÀÎ Àç·á°¡ µÇ¾ú½À´Ï´Ù. GaN on Si¿Í GaN on GaNµµ ¸Å¿ì Áß¿äÇÑ ¿ªÇÒÀ» Çϸç, ¼öÀͰú º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR) ¸ðµÎ¿¡¼­ ²ÙÁØÇÑ ¼ºÀåÀ» º¸À̰í ÀÖ½À´Ï´Ù. ½ÃÀå À¯Çüº° ¼¼ºÐÈ­´Â ´Ù¾çÇÑ »ê¾÷ ¿ä°Ç¿¡ ´ëÀÀÇÏ´Â GaN ±âÁúÀÇ ´Ù¿ëµµ¸¦ ¹Ý¿µÇÕ´Ï´Ù.

»çÀÌÁ ½ÃÀå

GaN ±âÁúÀÇ Å©±âº° ¼¼ºÐÈ­´Â ½ÃÀå ¿ªÇÐÀ» Çü¼ºÇϴµ¥ Áß¿äÇÑ ¿ªÇÒÀ» ÇÕ´Ï´Ù. 2023³â¿¡´Â 6ÀÎÄ¡ ±âÆÇÀÌ Á¦Á¶ ºñ¿ë°ú ¿þÀÌÆÛ ºÎµ¿»ê ÀÌ¿ëÀÇ ÃÖÀû ±ÕÇüÀ¸·Î ¼öÀÍÀ» À̲ø¾î °¥ °ÍÀÔ´Ï´Ù. ±×·¯³ª, 4ÀÎÄ¡ ±âÆÇÀº ¿¹Ãø ±â°£ µ¿¾È °¡Àå ³ôÀº º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR)À» ³ªÅ¸³»¸ç, ´õ ÀÛÀº Å©±âÀÇ ¿þÀÌÆÛ¿¡ ´ëÇÑ ¼±È£µµ°¡ Áõ°¡Çϰí ÀÖÀ½À» °­Á¶ÇÕ´Ï´Ù. ÀÌ·¯ÇÑ Ãß¼¼´Â ºñ¿ë È¿°ú ¹× ƯÁ¤ ¿ëµµÀÇ Æ¯Á¤ ¿ä±¸¿¡ ´ëÀÀÇÒ ¼ö ÀÖ´Â ´É·Â°ú °°Àº ¿äÀο¡ ÀÇÇØ ¿µÇâÀ» ¹Þ½À´Ï´Ù. 2ÀÎÄ¡ ¹× 8ÀÎÄ¡¿Í °°Àº ´Ù¾çÇÑ Å©±â ¿É¼ÇÀº ¾÷°èÀÇ ´Ù¾çÇÑ ¼ö¿ä¿¡ ´ëÀÀÇÏ´Â ½ÃÀåÀÇ À¯¿¬¼º¿¡ ±â¿©ÇÕ´Ï´Ù.

¿ëµµº° ½ÃÀå

GaN ±âÁúÀÇ ¿ëµµº° ¼¼±×¸ÕÅ×À̼ÇÀº ´Ù¾çÇÑ ÀüÀÚ ºÎǰÀÇ ´Ù¾ç¼ºÀ» °­Á¶ÇÕ´Ï´Ù. 2023³â¿¡´Â ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º¿¡¼­ GaN ±âÁúÀÇ Áß¿äÇÑ ¿ªÇÒÀ» ¹Ý¿µÇÏ¿© Æ®·£Áö½ºÅͰ¡ °¡Àå ³ôÀº ¼öÀÍÀ» âÃâÇÏ´Â ¿ëµµ¿¡ ºÎ»óÇÕ´Ï´Ù. µ¿½Ã¿¡ LED´Â °í¼º´É, ¿¡³ÊÁö È¿À²ÀûÀÎ Á¶¸í ¼Ö·ç¼Ç ¼ö¿ä Áõ°¡¿¡ °ßÀεǾî 2024³âºÎÅÍ 2032³â±îÁö ÃÖ°íÀÇ º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR)À» ³ªÅ¸³À´Ï´Ù. RF µð¹ÙÀ̽º, ·¹ÀÌÀú, IC ¹× ÄÁÆ®·Ñ·¯¸¦ Æ÷ÇÔÇÑ ±âŸ ¿ëµµ´Â ¼öÀͰú º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR) ¸ðµÎ¿¡ Å©°Ô ±â¿©Çϰí ÀÖ½À´Ï´Ù. ´Ù¾çÇÑ ¿ëµµ´Â ¿©·¯ ÀüÀÚ±â¼úÀÇ Áøº¸¿¡ GaN ±âÁúÀÌ ³Î¸® ä¿ëµÇ°í ÀÖ´Â °ÍÀ» ºÎ°¢Çϰí ÀÖ½À´Ï´Ù.

ÃÖÁ¾ ÀÌ¿ë »ê¾÷º° ½ÃÀå

GaN ±âÁú ½ÃÀå ¼¼ºÐÈ­´Â ´Ù¾çÇÑ ºÐ¾ß¿¡ ´ëÇÑ ½ÃÀå ħÅõ¿¡ ´ëÇÑ ÀλçÀÌÆ®À» Á¦°øÇÕ´Ï´Ù. 2023³â¿¡´Â IT ¹× Åë½Å ºÐ¾ß°¡ ¸ÅÃâ°ú ½ÃÀå Á¡À¯À² ¸ðµÎ¿¡¼­ ÁÖµµÇϰí ÀÖÀ¸¸ç, °íÁÖÆÄ ¿ëµµ¿¡¼­ GaN ±âÁúÀÇ Áß¿äÇÑ ¿ªÇÒÀÌ °­Á¶µÇ¾ú½À´Ï´Ù. ±×·¯³ª ÀÚµ¿Â÷ »ê¾÷Àº Àü±âÀÚµ¿Â÷ ¹× ADAS(÷´Ü ¿îÀü Áö¿ø ½Ã½ºÅÛ)¿¡¼­ GaN ±â¹Ý µð¹ÙÀ̽ºÀÇ ÅëÇÕÀÌ ÁøÇàµÊ¿¡ µû¶ó ¿¹Ãø ±â°£ µ¿¾È °¡Àå ³ôÀº º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR)À» ³ªÅ¸³À´Ï´Ù. ¼ÒºñÀÚ ÀÏ·ºÆ®·Î´Ð½º, Ç×°ø¿ìÁÖ, ¹æÀ§, °Ç°­ °ü¸® ¹× ±âŸ »ê¾÷µµ ½ÃÀåÀÇ °ßÁ¶ÇÑ ¼º´É¿¡ Å©°Ô ±â¿©Çϰí ÀÖÀ¸¸ç ´Ù¾çÇÑ ºÐ¾ß¿¡¼­ GaN ±âÁúÀÌ ³Î¸® äÅõǰí ÀÖÀ½À» º¸¿©ÁÝ´Ï´Ù. ÃÖÁ¾ ÀÌ¿ë »ê¾÷º° ½ÃÀå ¼¼ºÐÈ­´Â ÃֽŠÀüÀÚ ¿ëµµÀÇ ÁøÈ­ÇÏ´Â ¿ä±¸¿¡ ´ëÀÀÇÏ´Â Àç·áÀÇ ÀûÀÀ¼ºÀ» ¹Ý¿µÇÕ´Ï´Ù.

APAC´Â °è¼Ó ¼¼°è ¸®´õ

GaN ±âÁú ½ÃÀåÀº ¿ªµ¿ÀûÀÎ Áö¸®Àû µ¿ÇâÀ» º¸¿©ÁÖ¸ç, ¾Æ½Ã¾ÆÅÂÆò¾çÀº ¿¬°£ Æò±Õ ¼ºÀå·ü(º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR))°ú ¸ÅÃâ ºñÀ²¿¡¼­ °¡Àå ³ôÀº Áö¿ªÀÔ´Ï´Ù. 2023³â ¾Æ½Ã¾ÆÅÂÆò¾çÀº ƯÈ÷ Áß±¹, ÀϺ», Çѱ¹ µîÀÇ ±¹°¡¿¡¼­ °ßÁ¶ÇÑ ¹ÝµµÃ¼ »ê¾÷ÀÌ °ßÀÎÇÏ¿© ¸ÅÃâ¿¡¼­ ¼±µµÇϰí ÀÖ½À´Ï´Ù. º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR)ÀÌ °¡Àå ³ôÀº ÀÌÀ¯´Â ÀÌ Áö¿ªÀÌ R&D ÅõÀÚ¸¦ ´Ã¸®°í ±â¼ú ¹ßÀüÀ» ÃËÁøÇÏ°í ´Ù¾çÇÑ ¿ëµµ¿¡¼­ GaN ±âÁú äÅÃÀ» ÃËÁøÇϱ⠶§¹®ÀÔ´Ï´Ù. ºÏ¹Ì´Â ¼±µµÀû ÀÎ ¹ÝµµÃ¼ Á¦Á¶¾÷üÀÇ Á¸Àç¿Í ±â¼ú Çõ½Å¿¡ ÃÊÁ¡À» ¸ÂÃß°í ¸ÅÃâ ºñÀ²·Î ¾à°£ÀÇ Â÷À̸¦ º¸À̰í ÀÖ½À´Ï´Ù. À¯·´Àº ÀüÀÚ ¹× ÀÚµ¿Â÷ ºÎ¹®ÀÇ È®´ë¿¡ ÈûÀÔ¾î ½ÃÀå ¼öÀÍ¿¡ Å©°Ô ±â¿©Çϰí ÀÖ½À´Ï´Ù. Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«´Â ½ÃÀå Á¡À¯À²ÀÌ ÀÛ°í ½ÅÈï »ê¾÷ ¾ÖÇø®ÄÉÀ̼ǿ¡ ¹Ð·Á ²ÙÁØÇÑ ¼ºÀåÀ» º¸¿©ÁÝ´Ï´Ù.

½ÃÀå °æÀïÀº ¿¹Ãø ±â°£ µ¿¾È °ÝÈ­

GaN ±âÁú ½ÃÀåÀº ÁÖ¿ä ±â¾÷ °£ÀÇ Ä¡¿­ÇÑ °æÀïÀÌ Æ¯Â¡À̸ç, °¢ ±â¾÷Àº ½ÃÀå À§Ä¡¸¦ À¯ÁöÇϱâ À§ÇØ µ¶Æ¯ÇÑ Àü·«À» äÅÃÇϰí ÀÖ½À´Ï´Ù. 2023³â¿¡´Â Cre Inc., Cre Inc., Aixtron SE, Kyma Technologies, Inc., Kyocera Corporation, Mitsubishi Chemical Corporation, MTI Corporation, NGK Insulators, Shin-Etsu Chemical Co., Ltd., Soitec, Toyoda Gosei Co. ., Ltd., Xiamen Powerway Advanced Material Co., Ltd. µîÀÇ À¯·Â ±â¾÷ÀÌ ½ÃÀåÀ» µ¶Á¡ÇÕ´Ï´Ù. ÀÌ·¯ÇÑ ±â¾÷µéÀº Á¦Ç° Çõ½Å, Á¦ÈÞ, M&A µî Àü·«Àû ÀÌ´Ï¼ÅÆ¼ºê¿¡ ÁÖ·ÂÇϰí ÀÖ½À´Ï´Ù. Á¦Ç° Çõ½ÅÀº ¿©ÀüÈ÷ ÁÖ¿ä Àü·«À̸ç, °¢ ȸ»ç´Â GaN ±âÁúÀÇ ¼º´É°ú È¿À²¼ºÀ» ³ôÀ̱â À§ÇØ ¿¬±¸ °³¹ß¿¡ Áö¼ÓÀûÀ¸·Î ÅõÀÚÇϰí ÀÖ½À´Ï´Ù. ±â¼ú Á¦°ø¾÷ü, ¿¬±¸ ±â°ü, ÃÖÁ¾ »ç¿ëÀÚ¿ÍÀÇ Çù¾÷ ¹× ÆÄÆ®³Ê½ÊÀº ÀϹÝÀûÀÎ µ¿ÇâÀ̸ç, Á¾ÇÕÀûÀÎ ¼Ö·ç¼ÇÀ» À§ÇÑ Àü¹® Áö½ÄÀ» ¸ðÀ¸´Â °ÍÀ» ¸ñÇ¥·Î ÇÕ´Ï´Ù. ¶ÇÇÑ ÇÕº´°ú Àμö´Â ½ÃÀå¿¡ µµ´ÞÇÏ°í ´É·ÂÀ» È®´ëÇϱâ À§ÇØ Ã¤ÅõǾú½À´Ï´Ù. Àü¹ÝÀûÀ¸·Î °æÀï ±¸µµÀº Çõ½ÅÀ» ÃßÁøÇÏ´Â ±âÁ¸ ±â¾÷°ú Æ´»õ ½ÃÀåÀ» ã´Â ½ÅÈï ±â¾÷ °£ÀÇ ±ÕÇüÀ» Ư¡À¸·ÎÇÕ´Ï´Ù.

ÀÌ º¸°í¼­¿¡¼­ ´äº¯À» ¾òÀ» ¼ö ÀÖ´Â ÁÖ¿ä Áú¹®

GaN ±âÁú ½ÃÀåÀÇ ¼ºÀå¿¡ ¿µÇâÀ» ¹ÌÄ¡´Â ÁÖ¿ä ¸¶ÀÌÅ©·Î ¹× °Å½ÃÀû ȯ°æ ¿äÀÎÀº ¹«¾ùÀΰ¡?

ÇöÀç ¹× ¿¹Ãø ±â°£ µ¿¾È Á¦Ç° ºÎ¹® ¹× Áö¿ª¿¡ ´ëÇÑ ÁÖ¿ä ÅõÀÚ Æ÷ÄÏÀº?

2032³â±îÁöÀÇ ÃßÁ¤Ãß°è,½ÃÀå ¿¹Ãø

¿¹Ãø ±â°£ µ¿¾È °¡Àå ºü¸¥ º¹ÇÕ ¿¬°£ ¼ºÀå·ü(CAGR)À» Â÷ÁöÇÏ´Â ºÎ¹®Àº?

½ÃÀå Á¡À¯À²ÀÇ Å« ºÎ¹®¿Í ±× ÀÌÀ¯´Â?

ÁßÀú¼Òµæ ±¹°¡´Â GaN ±âÁú ½ÃÀå¿¡ ÅõÀÚÇϰí Àִ°¡?

GaN ±âÁú ½ÃÀå¿¡¼­ °¡Àå ±Ô¸ð°¡ Å« Áö¿ª ½ÃÀåÀº ¾îµðÀԴϱî?

¾Æ½Ã¾ÆÅÂÆò¾ç, ¶óƾ¾Æ¸Þ¸®Ä«, Áßµ¿, ¾ÆÇÁ¸®Ä« µî ½ÅÈï ½ÃÀå ½ÃÀå µ¿Çâ°ú ¿ªÇÐÀº?

GaN ±âÁú ½ÃÀåÀÇ ¼ºÀåÀ» °¡¼ÓÇÏ´Â ÁÖ¿ä µ¿ÇâÀº?

¼¼°è GaN ±âÁú ½ÃÀå¿¡¼­ Á¸Àç°¨À» ³ôÀ̱â À§ÇÑ ÁÖ¿ä °æÀï¾÷ü¿Í ±× ÁÖ¿ä Àü·«À̶õ?

¸ñÂ÷

Á¦1Àå ¼­¹®

Á¦2Àå ÁÖ¿ä ¿ä¾à

Á¦3Àå GaN ±âÁú ½ÃÀå : °æÀï ºÐ¼®

Á¦4Àå GaN ±âÁú ½ÃÀå : ¸ÅÅ©·Î ºÐ¼®°ú ½ÃÀå ¿ªÇÐ

Á¦5Àå GaN ±âÁú ½ÃÀå : À¯Çüº°(2022³â-2032³â)

Á¦6Àå GaN ±âÁú ½ÃÀå : »çÀÌÁ(2022³â-2032³â)

Á¦7Àå GaN ±âÁú ½ÃÀå : ¿ëµµº°(2022³â-2032³â)

Á¦8Àå GaN ±âÁú ½ÃÀå : ÃÖÁ¾ ¿ëµµº°(2022³â-2032³â)

Á¦9Àå ºÏ¹ÌÀÇ GaN ±âÁú ½ÃÀå(2022³â-2032³â)

Á¦10Àå ¿µ±¹ ¹× À¯·´ ¿¬ÇÕÀÇ GaN ±âÁú ½ÃÀå(2022³â-2032³â)

Á¦11Àå ¾Æ½Ã¾ÆÅÂÆò¾ç GaN ±âÁú ½ÃÀå(2022³â-2032³â)

Á¦12Àå ¶óÆ¾¾Æ¸Þ¸®Ä«ÀÇ GaN ±âÁú ½ÃÀå(2022³â-2032³â)

Á¦13Àå Áßµ¿ ¹× ¾ÆÇÁ¸®Ä«ÀÇ GaN ±âÁú ½ÃÀå(2022³â-2032³â)

Á¦14Àå ±â¾÷ ÇÁ·ÎÆÄÀÏ

BJH
¿µ¹® ¸ñÂ÷

¿µ¹®¸ñÂ÷

The GaN substrate market is expected to grow at a CAGR of 11.2% during the forecast period of 2024 to 2032, driven by the increasing demand for high-performance electronic devices globally. Asia-Pacific emerges as the region with the highest revenues, propelled by substantial investments in research and development, fostering technological advancements and widespread adoption of GaN substrates. North America and Europe contribute significantly to the market's revenue, reflecting their strong foothold in the semiconductor and electronics industries. The Middle East and Africa exhibit steady growth, indicating the expanding applications of GaN substrates in emerging industrial sectors. Competitive trends highlight the dominance of key players like Cree Inc., Sumitomo Electric Industries, Ltd., and Aixtron SE, emphasizing the importance of product innovation, strategic partnerships, and mergers and acquisitions. The market's overall outlook is characterized by a dynamic landscape, shaped by technological advancements, collaborative initiatives, and the pursuit of market leadership by key players.

Key Market Drivers

Rapid Expansion in Power Electronics

One of the primary drivers propelling the GaN substrate market is the rapid expansion in power electronics applications. GaN substrates are essential for the development of power devices with superior performance characteristics, such as high electron mobility and thermal stability. The increasing demand for power-efficient electronic systems, especially in applications like electric vehicles, renewable energy systems, and power supplies, is fueling the adoption of GaN substrates. The evidence lies in the growing deployment of GaN-based power devices in various industries, showcasing the material's ability to enhance energy efficiency and contribute to sustainable technological solutions.

Growing Demand for High-Frequency RF Devices

The market is further driven by the growing demand for high-frequency radio-frequency (RF) devices. GaN substrates exhibit exceptional RF properties, making them crucial for applications in the telecommunications, aerospace, and defense sectors. The evidence supporting this driver is evident in the increasing deployment of GaN-based RF devices in communication infrastructure, radar systems, and satellite communication. The ability of GaN substrates to operate at higher frequencies while maintaining stability positions them as a preferred choice for next-generation RF technologies, fostering the market's growth.

Expanding Applications in Optoelectronics

GaN substrates find extensive use in optoelectronic applications, serving as a key driver for market expansion. The development of high-brightness light-emitting diodes (LEDs) and laser diodes relies on the superior properties of GaN substrates. The evidence supporting this driver is seen in the widespread adoption of GaN-based optoelectronic devices across industries, including displays, automotive lighting, and medical imaging. The unique combination of wide bandgap and optical transparency positions GaN substrates as a fundamental material for driving innovations in optoelectronics.

Restraint: Supply Chain Constraints and Production Costs

While the GaN substrate market experiences substantial growth, a notable restraint lies in supply chain constraints and production costs. The production of high-quality GaN substrates involves complex manufacturing processes, leading to elevated production costs. The evidence for this restraint is observed in the challenges faced by manufacturers in maintaining a consistent and cost-effective supply chain for GaN substrates. These constraints can potentially impact market growth, especially in price-sensitive industries, and necessitate strategic solutions to address production efficiency and cost challenges.

Key Market Segmentation

Market by Type

The GaN substrate market exhibits diverse types, each contributing significantly to both revenue and Compound Annual Growth Rate (CAGR). In 2023, GaN on Sapphire emerged as the highest revenue-generating type, driven by its widespread adoption in applications requiring high crystal quality and thermal stability. Simultaneously, GaN on Diamond demonstrates the highest CAGR during the forecast period from 2024 to 2032, fueled by the material's exceptional thermal conductivity and durability, making it ideal for demanding environments. GaN on Si and GaN on GaN also play pivotal roles, showcasing steady growth in both revenue and CAGR. The market's segmentation by type reflects the versatility of GaN substrates, catering to diverse industry requirements.

Market by Size

The size segmentation of GaN substrates plays a crucial role in shaping market dynamics. In 2023, 6-inch substrates lead in revenue, driven by their optimal balance between manufacturing cost and wafer real estate utilization. However, the 4-inch substrates exhibit the highest CAGR during the forecast period, emphasizing a growing preference for smaller-sized wafers. This trend is influenced by factors such as cost-effectiveness and the ability to address the specific needs of certain applications. The diverse size options, including 2 Inch and 8 Inch, contribute to the market's flexibility in catering to varying industry demands.

Market by Applications

The application segmentation of GaN substrates underscores their versatility across various electronic components. In 2023, Transistors emerge as the highest revenue-generating application, reflecting the integral role of GaN substrates in power electronics. Simultaneously, LEDs showcase the highest CAGR from 2024 to 2032, driven by the increasing demand for high-performance and energy-efficient lighting solutions. RF Devices, Lasers, and other applications, including ICs and Controllers, demonstrate significant contributions to both revenue and CAGR. The diverse application landscape highlights the widespread adoption of GaN substrates in advancing multiple electronic technologies.

Market by End-use Industries

The end-use industry segmentation of GaN substrates provides insights into the market's penetration across various sectors. In 2023, the IT & Telecommunication sector leads in both revenue and market share, emphasizing the critical role of GaN substrates in high-frequency applications. However, the Automotive sector exhibits the highest CAGR during the forecast period, driven by the growing integration of GaN-based devices in electric vehicles and advanced driver-assistance systems. Consumer Electronics, Aerospace &Defense, Healthcare, and other industries also contribute significantly to the market's robust performance, showcasing the widespread adoption of GaN substrates across diverse sectors. The market's segmentation by end-use industry reflects the material's adaptability to meet the evolving needs of modern electronic applications.

APAC Remains the Global Leader

The GaN substrate market exhibits dynamic geographic trends, with Asia-Pacific emerging as the region with the highest Compound Annual Growth Rate (CAGR) and revenue percentage. In 2023, Asia-Pacific leads in revenue, driven by the region's robust semiconductor industry, particularly in countries like China, Japan, and South Korea. The highest CAGR is attributed to the region's increasing investments in research and development, fostering technological advancements and driving the adoption of GaN substrates across diverse applications. North America follows closely in revenue percentage, buoyed by the presence of major semiconductor manufacturers and a focus on innovation. Europe also contributes significantly to the market's revenue, supported by the expanding electronics and automotive sectors. The Middle East and Africa, while displaying a smaller market share, demonstrate steady growth, propelled by emerging industrial applications.

Market Competition to Intensify during the Forecast Period

The GaN substrate market is characterized by intense competition among key players, each employing distinct strategies to maintain their market position. In 2023, prominent players such as Cree Inc., Sumitomo Electric Industries, Ltd., Aixtron SE, Kyma Technologies, Inc., Kyocera Corporation, Mitsubishi Chemical Corporation, MTI Corporation, NGK Insulators, Ltd., Shin-Etsu Chemical Co., Ltd., Soitec, Toyoda Gosei Co., Ltd., and Xiamen Powerway Advanced Material Co., Ltd. dominate the market. These players focus on strategic initiatives such as product innovation, partnerships, and mergers and acquisitions. Product innovation remains a key strategy, with companies continuously investing in research and development to enhance the performance and efficiency of GaN substrates. Collaborations and partnerships with technology providers, research institutions, and end-users are common trends, aiming to leverage combined expertise for comprehensive solutions. Additionally, mergers and acquisitions are employed to expand market reach and capabilities. Overall, the competitive landscape is marked by a balance between established players driving innovation and emerging companies seeking niche opportunities.

Historical & Forecast Period

This study report represents analysis of each segment from 2022 to 2032 considering 2023 as the base year. Compounded Annual Growth Rate (CAGR) for each of the respective segments estimated for the forecast period of 2024 to 2032.

The current report comprises of quantitative market estimations for each micro market for every geographical region and qualitative market analysis such as micro and macro environment analysis, market trends, competitive intelligence, segment analysis, porters five force model, top winning strategies, top investment markets, emerging trends and technological analysis, case studies, strategic conclusions and recommendations and other key market insights.

Research Methodology

The complete research study was conducted in three phases, namely: secondary research, primary research, and expert panel review. key data point that enables the estimation of GaN Substrate market are as follows:

Research and development budgets of manufacturers and government spending

Revenues of key companies in the market segment

Number of end users and consumption volume, price and value.

Geographical revenues generate by countries considered in the report

Micro and macro environment factors that are currently influencing the GaN Substrate market and their expected impact during the forecast period.

Market forecast was performed through proprietary software that analyzes various qualitative and quantitative factors. Growth rate and CAGR were estimated through intensive secondary and primary research. Data triangulation across various data points provides accuracy across various analyzed market segments in the report. Application of both top down and bottom-up approach for validation of market estimation assures logical, methodical and mathematical consistency of the quantitative data.

Market Segmentation

Type

Size

2 Inch

4 Inch

6 Inch

8 Inch

Application

End-Use

Region Segment (2022-2032; US$ Million)

North America

U.S.

Canada

Rest of North America

UK and European Union

UK

Germany

Spain

Italy

France

Rest of Europe

Asia Pacific

China

Japan

India

Australia

South Korea

Rest of Asia Pacific

Latin America

Brazil

Mexico

Rest of Latin America

Middle East and Africa

GCC

Africa

Rest of Middle East and Africa

Key questions answered in this report

What are the key micro and macro environmental factors that are impacting the growth of GaN Substrate market?

What are the key investment pockets with respect to product segments and geographies currently and during the forecast period?

Estimated forecast and market projections up to 2032.

Which segment accounts for the fastest CAGR during the forecast period?

Which market segment holds a larger market share and why?

Are low and middle-income economies investing in the GaN Substrate market?

Which is the largest regional market for GaN Substrate market?

What are the market trends and dynamics in emerging markets such as Asia Pacific, Latin America, and Middle East & Africa?

Which are the key trends driving GaN Substrate market growth?

Who are the key competitors and what are their key strategies to enhance their market presence in the GaN Substrate market worldwide?

Table of Contents

1. Preface

2. Executive Summary

3. GaN Substrate Market: Competitive Analysis

4. GaN Substrate Market: Macro Analysis & Market Dynamics

5. GaN Substrate Market: By Type, 2022-2032, USD (Million)

6. GaN Substrate Market: By Size, 2022-2032, USD (Million)

7. GaN Substrate Market: By Application, 2022-2032, USD (Million)

8. GaN Substrate Market: By End-Use, 2022-2032, USD (Million)

9. North America GaN Substrate Market, 2022-2032, USD (Million)

10. UK and European Union GaN Substrate Market, 2022-2032, USD (Million)

11. Asia Pacific GaN Substrate Market, 2022-2032, USD (Million)

12. Latin America GaN Substrate Market, 2022-2032, USD (Million)

13. Middle East and Africa GaN Substrate Market, 2022-2032, USD (Million)

14. Company Profile

(ÁÖ)±Û·Î¹úÀÎÆ÷¸ÞÀÌ¼Ç 02-2025-2992 kr-info@giikorea.co.kr
¨Ï Copyright Global Information, Inc. All rights reserved.
PC¹öÀü º¸±â