ÆÄ¿ö MOSFET ½ÃÀå : ¼¼°è »ê¾÷ ±Ô¸ð, Á¡À¯À², µ¿Çâ, ±âȸ, ¿¹Ãø(2018-2028³â) - À¯Çüº°, Àü·ÂÀ²º°, ä³Î À¯Çüº°, ¿ëµµº°, Áö¿ªº°, °æÀﺰ
Power MOSFET Market - Global Industry Size, Share, Trends, Opportunity, and Forecast, 2018-2028 Segmented By Type, By Power Rate, By Channel Type, By Application, By Region and Competition
»óǰÄÚµå : 1370870
¸®¼­Ä¡»ç : TechSci Research
¹ßÇàÀÏ : 2023³â 10¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 170 Pages
 ¶óÀ̼±½º & °¡°Ý (ºÎ°¡¼¼ º°µµ)
US $ 4,500 £Ü 6,385,000
Unprintable PDF (Single User License) help
PDF º¸°í¼­¸¦ 1¸í¸¸ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμ⠺Ұ¡´ÉÇϸç, ÅØ½ºÆ®ÀÇ Copy&Pasteµµ ºÒ°¡´ÉÇÕ´Ï´Ù.
US $ 5,500 £Ü 7,805,000
PDF and Excel (Multi-User License) help
PDF ¹× Excel º¸°í¼­¸¦ ±â¾÷ÀÇ ÆÀÀ̳ª ±â°ü¿¡¼­ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμ⠰¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ¹× Excel ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 8,000 £Ü 11,352,000
PDF and Excel (Custom Research License) help
PDF ¹× Excel º¸°í¼­¸¦ µ¿ÀÏ ±â¾÷ÀÇ ¸ðµç ºÐÀÌ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμ⠰¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ¹× Excel ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù. 80½Ã°£ÀÇ ¾Ö³Î¸®½ºÆ® ŸÀÓÀÌ Æ÷ÇԵǾî ÀÖ°í Copy & Paste °¡´ÉÇÑ PPT ¹öÀüµµ Á¦°øµË´Ï´Ù. ªÀº Bespoke ¸®¼­Ä¡ ÇÁ·ÎÁ§Æ® ¼öÇà¿¡ ¸Â´Â ¶óÀ̼±½ºÀÔ´Ï´Ù.


¤± Add-on °¡´É: °í°´ÀÇ ¿äû¿¡ µû¶ó ÀÏÁ¤ÇÑ ¹üÀ§ ³»¿¡¼­ CustomizationÀÌ °¡´ÉÇÕ´Ï´Ù. ÀÚ¼¼ÇÑ »çÇ×Àº ¹®ÀÇÇØ Áֽñ⠹ٶø´Ï´Ù.

Çѱ۸ñÂ÷

¼¼°èÀÇ ÆÄ¿ö MOSFET(±Ý¼Ó-»êÈ­¸·-¹ÝµµÃ¼ Àü°è È¿°ú Æ®·£Áö½ºÅÍ) ½ÃÀåÀº ´Ù¾çÇÑ »ê¾÷¿¡¼­ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½ºÀÇ »ç¿ëÀÌ Áõ°¡Çϰí ÀÖ´Â °ÍÀ¸·Î ÀÎÇØ ¿¹Ãø ±â°£ Áß °ß°íÇÑ ÆäÀ̽º·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµÇ°í ÀÖ½À´Ï´Ù.

Àü±âÀÚµ¿Â÷(EV), Àç»ý ¿¡³ÊÁö ½Ã½ºÅÛ, »ê¾÷¿ë ¸ðÅÍ µå¶óÀ̺ê, ¼ÒºñÀÚ ÀüÀÚÁ¦Ç°, Åë½Å, µ¥ÀÌÅͼ¾ÅÍ µîÀÇ ¿ëµµ¿¡¼­ Àü·Â MOSFETÀº ÀÌ·¯ÇÑ »ê¾÷ÀÌ °è¼Ó È®ÀåµÊ¿¡ µû¶ó ¼ö¿ä°¡ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ Àü·Â MOSFETÀº ¿¡³ÊÁö È¿À²À» Çâ»ó½ÃŰ´Â µ¥ ÇʼöÀûÀÔ´Ï´Ù. ¶ÇÇÑ Àü·Â MOSFETÀº Àü·ÂÀ» È¿À²ÀûÀ¸·Î ½ºÀ§ÄªÇÏ°í ½Ã½ºÅÛÀÇ ¿¡³ÊÁö ¼Õ½ÇÀ» ÃÖ¼ÒÈ­ÇÒ ¼ö ÀÖÀ¸¹Ç·Î ¼ö¿ä°¡ ³ô½À´Ï´Ù. Àü·Â MOSFETÀº Àü·Â º¯È¯ ¹× Á¦¾î ½Ã½ºÅÛÀÇ È¿À²¼º Çâ»ó¿¡ ±â¿©ÇÏ¿© ¿¡³ÊÁö¸¦ Àý¾àÇÒ ¼ö ÀÖ½À´Ï´Ù.

ÆÄ¿ö MOSFETÀº ³ôÀº Àü·Â ·¹º§¿¡ ´ëÀÀÇÒ ¼ö ÀÖµµ·Ï ¸¸µé¾îÁ³½À´Ï´Ù. Àý¿¬ °ÔÀÌÆ®Çü ¹ÙÀÌÆú¶ó Æ®·£Áö½ºÅÍ(IGBT)¿Í »çÀ̸®½ºÅÍ´Â ÀúÀü¾Ð¿¡¼­ ½ºÀ§Äª ¼Óµµ¿Í È¿À² Ãø¸é¿¡¼­ À¯»çÇÑ ÀåÁ¡À» °¡Áø Àü·Â ¹ÝµµÃ¼ ¼ÒÀÚÀÔ´Ï´Ù. »çÀ̸®½ºÅÍ´Â IGBT¿Í Àý¿¬ °ÔÀÌÆ®¸¦ °øÀ¯Çϱ⠶§¹®¿¡ ±¸µ¿ÀÌ ¿ëÀÌÇϸç, IGBT´Â À̵æÀÌ ³·°í °ÔÀÌÆ® Àü¾ÐÀ» Á¦¾î Àü¾Ðº¸´Ù ³ô°Ô ¼³Á¤ÇØ¾ß ÇÒ ¼öµµ ÀÖ½À´Ï´Ù.

¿À´Ã³¯ÀÇ ÀüÀÚ±â±â¿¡´Â °í°´ÀÌ ´õ ¾È½ÉÇÏ°í ´õ ¸¹ÀÌ ÆÇ¸ÅÇÒ ¼ö ÀÖ´Â ¸¹Àº ±â´ÉÀÌ ÀÖ½À´Ï´Ù. ¼ÒºñÀÚÀÇ ¾ÈÀü ±âÁØÀÌ ³ô¾ÆÁö°í, ÈÞ´ëÆù, ÄÄÇ»ÅÍ, ¹«¼±Åë½Å, Ŭ¶ó¿ìµå ½Ã½ºÅÛ µî ÀüÀÚ ºÎǰÀÇ ±â¼ú ¹ßÀüÀ¸·Î ÀÎÇØ °³¼±µÈ ÀüÀÚ ±â±â ¹× Àåºñ¿¡ ´ëÇÑ »õ·Î¿î ºñÁî´Ï½º ±âȸ°¡ âÃâµÇ°í ÀÖ½À´Ï´Ù. Àü·Â MOSFETÀº ±â¼ú Çõ½ÅÀÇ ±Þ¼ÓÇÑ ¹ßÀü, »ý»ê¼º È®´ë, ÀüÀÚ ºÎǰÀÇ ¼ÒÇüÈ­·Î ÀÎÇØ Áß¿äÇÑ ÀáÀç·ÂÀ» °¡Áö°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ³ª³ë ·¹±Ö·¹ÀÌÅÍ´Â ÃÖ¼ÒÇÑÀÇ Àü·Â ºÎÁ·À¸·Î »çÀÌŬÀ» ó¸®ÇÒ ¼ö ÀÖ´Â ±âÃʰ¡ µË´Ï´Ù. ´Ù¾çÇÑ ÀüÀÚ±â±â¸¦ Á¶Á¤ÇÔÀ¸·Î½á ½ÃÀå Âü¿©ÀÚµéÀº ¸¹Àº ÀáÀç·ÂÀ» ¾òÀ» ¼ö ÀÖÀ» °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

½ÃÀå °³¿ä
¿¹Ãø ±â°£ 2024-2028
½ÃÀå ±Ô¸ð 2022³â 253¾ï 4,000¸¸ ´Þ·¯
2028³â ½ÃÀå ±Ô¸ð 347¾ï 8,000¸¸ ´Þ·¯
CAGR 2023-2028 5.68%
±Þ¼ºÀå ºÎ¹® »ê¾÷¿ë
ÃÖ´ë ½ÃÀå ºÏ¹Ì

ÀýÀü Á߽à °³¼±

È­¼®¿¬·á°¡ ºü¸£°Ô °í°¥µÇ°í ÀÖÀ¸¸ç, ¾ÕÀ¸·Î Àü·Â ¹®Á¦¿¡ Á÷¸éÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¿¡³ÊÁö Àý¾àÀÌ Á¡Á¡ ´õ ÁÖ¸ñ¹Þ´Â °ÍÀº ´ç¿¬ÇØ º¸À̸ç, MOSFETÀº Àü±âÀÚµ¿Â÷ °ü¸®, ÀιöÅÍ, Àü¿ø °ø±Þ Àåºñ µî¿¡ »ç¿ëµÇ´Â ½ºÀ§Äª ºÎǰÀ¸·Î ½ºÀ§Äª Á֯ļö°¡ ³·Àº »ê¾÷ ÇöÀå¿¡¼­ ÀÚÁÖ »ç¿ëµË´Ï´Ù. ¿¡³ÊÁö È¿À²°ú Àç»ý ¿¡³ÊÁö¿¡ ´ëÇÑ °ü½ÉÀÌ ³ô¾ÆÁü¿¡ µû¶ó ÀÌ »ê¾÷Àº µ¶ÀÚÀûÀÎ ÀÔÁö¸¦ ±¸ÃàÇϰí ÀÖ½À´Ï´Ù. °¡Àå ¸¹ÀÌ ¼³Ä¡µÈ Àç»ý ¿¡³ÊÁö°¡ Àü·Â ¸ðµâÀÇ ´ëºÎºÐÀ» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. µû¶ó¼­ ÀÌ·¯ÇÑ ¿äÀεéÀÌ ¼¼°è ÆÄ¿ö MOSFET ½ÃÀåÀ» ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

¹ÝµµÃ¼¿¡¼­ ÆÄ¿ö MOSFETÀÇ Æø³ÐÀº »ç¿ëÀ¸·Î ¼¼°è ÆÄ¿ö MOSFET ½ÃÀå °ßÀÎ

MOSFETÀº ÷´Ü ȸ·Î¿Í °£´ÜÇÑ È¸·Î¿¡ °¡Àå ÀϹÝÀûÀ¸·Î »ç¿ëµÇ´Â ¹ÝµµÃ¼ ÀåºñÀ̸ç, °¡Àå ÀÚÁÖ »ç¿ëµÇ´Â Àü·Â ÀåºñÀ̱⵵ ÇÕ´Ï´Ù. ¼öÃàÀº ÀüÀÚ ¹ÝµµÃ¼ ±â¼ú Çõ½ÅÀÇ ±Þ¼ÓÇÑ ¹ßÀüÀ» ÁÖµµÇÏ¿© ¸Þ¸ð¸® Ĩ ¹× ¸¶ÀÌÅ©·Î Ĩ°ú °°Àº °í¹Ðµµ ÁýÀûȸ·Î(IC)¿¡ ÈûÀ» ½Ç¾îÁÖ°í ÀÖ½À´Ï´Ù.

Àü±â±â±â¿Í ±â°è¿¡ ´ëÇÑ ÀÇÁ¸µµ Áõ°¡·Î ¼¼°èÀÇ ÆÄ¿ö MOSFET ½ÃÀå ¼ºÀå ÃËÁø

¿À´Ã³¯ÀÇ ±â°è´Â ¸Å¿ì À¯¿¬Çϰí, ÇÊ¿äÇÑ ÃÖ¼ÒÇÑÀÇ ÀÛ¾÷¸¸ ÇÒ ¼ö ÀÖÀ¸¸ç, »ý»ê¼ºÀÌ ³ô½À´Ï´Ù. ±â°è ¹× ÀüÀÚ Àåºñ ½ÃÀåÀº ¾ÕÀ¸·Îµµ °è¼Ó ¼ºÀåÇϰųª ¼ö¿ä¸¦ ´É°¡ÇÏ´Â ¼Óµµ·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ´ëºÎºÐÀÇ ±â°è´Â ÆÄ¿ö MOSFETÀ¸·Î Àü·ÂÀ» °ü¸®Çϸç, MOSFET ¸ðµâÀº Àü¾Ð ½ºÀ§Äª ÀÛ¾÷¿¡ ÀÚÁÖ »ç¿ëµÇ¸ç, ¼¼°è¿¡¼­ ¾à 7¸¸ 8,124GWÀÇ Ç³·Â ¹× ž籤¹ßÀü ¼³ºñ°¡ ÀÖ½À´Ï´Ù. Àü·Â MOSFET¿¡ Á÷Á¢ÀûÀ¸·Î µµ¿òÀÌ µÇ´Â Àü±â ±â°è ¼³ºñ¿¡ ´ëÇÑ ÀÇÁ¸µµ°¡ ³ô¾ÆÁö´Â °ÍÀº ¼¼°è Àü·Â MOSFET ½ÃÀå¿¡ ¿µÇâÀ» ¹ÌÄ¡´Â ÁÖ¿ä ¿äÀÎ Áß ÇϳªÀÔ´Ï´Ù.

Àü±âÀÚµ¿Â÷ ºÎǰ ¼ö¿ä Áõ°¡·Î ¼¼°èÀÇ ÆÄ¿ö MOSFET ½ÃÀå ¼ºÀå ÃËÁø

¼¼°è ÆÄ¿ö MOSFET ½ÃÀåÀº ÀúÁÖÇà°Å¸® ¹«°øÇØ Â÷·® »ç¿ëÀ» Àå·ÁÇÏ´Â ¼¼Á¦ ÇýÅðú º¸Á¶±ÝÀ» Á¦°øÇÏ´Â Á¤ºÎ ±¸»ó·Î ÀÎÇØ ¿¹Ãø ±â°£ Áß È®´ëµÉ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ ¼ö¼Ò ¿¬·á °ø±Þ ½ºÅ×À̼ǰú Àü±âÀÚµ¿Â÷ ÃæÀü¼Ò ¼³Ä¡¿¡ ´ëÇÑ ÅõÀÚ Áõ°¡µµ ¼¼°è ½ÃÀåÀ» ÃËÁøÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ¶ÇÇÑ Àü±âÀÚµ¿Â÷ ¹èÅ͸® »ý»êÀÇ ´ëÁßÈ­¿Í Áö¼ÓÀûÀÎ ±â¼ú ¹ßÀüÀ¸·Î ÀÎÇØ ¼¼°è ½ÃÀåÀº °¡°Ý Ç϶ôÀÇ ÇýÅÃÀ» ´©¸± °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÈÞ´ë¿ë ÃæÀü±â, ¾î´ðÅÍ, Ä¿³ØÅÍ, ÃæÀü ÄÉÀ̺í°ú °°Àº Àü±âÀÚµ¿Â÷ Àåºñ ¹× ºÎǰ¿¡ ´ëÇÑ ³ôÀº ¼ö¿äµµ ¼¼°è ½ÃÀåÀ» ÃËÁøÇÏ´Â Áß¿äÇÑ ¿äÀÎÀÔ´Ï´Ù.

¿î¿µ»óÀÇ Á¦¾à°ú ³ôÀº ºñ¿ëÀÌ ¼¼°èÀÇ ÆÄ¿ö MOSFET ½ÃÀå ¼ºÀåÀ» ÀúÇØÇÒ °ÍÀ¸·Î ¿¹»ó

°ÔÀÌÆ® »êÈ­¸·¿¡ ÀÇÇÑ Àý¿¬ ÆÄ±«, µå·¹ÀÎ-¼Ò½º °£ Àü¾Ð, ÃÖ´ë µå·¹ÀÎ Àü·ù, ¿Âµµ µîÀÇ Á¦¾àÀ¸·Î ÀÎÇØ ½ÃÀå È®´ë¿¡ °É¸²µ¹ÀÌ µÇ°í ÀÖ½À´Ï´Ù. °ÔÀÌÆ® »êÈ­¸·Àº ¾ã±â ¶§¹®¿¡ Àý¿¬ ÆÄ±« ÇѰ谡 ¾è´Ù. °ÔÀÌÆ®-¼Ò½º °£ Àü¾ÐÀÌ ³ôÀ¸¸é MOSFETÀÇ ¼ö¸íÀÌ ´õ¿í ª¾ÆÁö°í °¨¼Ò È¿°ú°¡ °ÅÀÇ ¾øÀ¸¸ç, MOSFETÀº ¶ÇÇÑ Ã¤³Î-¼Ò½º °£ Àü¾Ð°ú Àü·ùÀÇ Æ¯Á¤ ôµµ¸¦ ÇÊ¿ä·Î ÇÕ´Ï´Ù. ÀÌ·¯ÇÑ ¿ä±¸ »çÇ×ÀÌ ÃæÁ·µÇÁö ¾ÊÀ¸¸é °ð Àý¿¬ ÆÄ±«°¡ ¹ß»ýÇÒ ¼ö ÀÖ½À´Ï´Ù.

¶ÇÇÑ Àü·Â MOSFETÀº ´©¼³ Àü·ù °æÇâÀÌ ÀÖÀ¸¸ç, ½ÃÀå ¼ºÀå¿¡ ¿µÇâÀ» ¹ÌĨ´Ï´Ù. ÆÄ¿ö MOSFETÀÇ ³ôÀº ¼³Ä¡ ºñ¿ëÀ¸·Î ÀÎÇØ Â÷·® °¡°ÝÀÌ »ó½ÂÇÏ°í ½ÃÀå È®´ë°¡ Á¦ÇÑµÉ ¼ö ÀÖ½À´Ï´Ù. ÀÚµ¿Â÷¿¡´Â ¼ö¸¹Àº ±â¼ú ºÎǰÀÌ ÀÖÀ¸¹Ç·Î À¯Áöº¸¼ö°¡ ¾î·Æ°í ¼÷·ÃµÈ ±â¼úÀÚ°¡ ÇÊ¿äÇÕ´Ï´Ù. º¹ÀâÇÑ ¾ÆÅ°ÅØÃ³¸¦ °¡Áø ½Ã½ºÅÛÀÇ ¼ö¸íÀÌ Âª½À´Ï´Ù. µû¶ó¼­ À§ÀÇ ¿äÀεéÀÌ ¼¼°è ÆÄ¿ö MOSFET ½ÃÀåÀÇ ¼ºÀåÀ» ÀúÇØÇÒ °ÍÀ¸·Î ÃßÁ¤µË´Ï´Ù.

Á¶»ç ¹üÀ§ :

¼¼°èÀÇ ÆÄ¿ö MOSFET ½ÃÀåÀ» ÀÌÇÏ Ä«Å×°í¸®·Î ºÐ·ùÇϰí, ¾÷°è µ¿Çâ¿¡ ´ëÇØ¼­µµ »ó¼úÇϰí ÀÖ½À´Ï´Ù.

ÆÄ¿ö MOSFET ½ÃÀå, À¯Çüº° :

°­È­ ¸ðµå

ÆÄ¿ö MOSFET ½ÃÀå : ä³Î À¯Çüº°

ÆÄ¿ö MOSFET ½ÃÀå : ¿ëµµº°

ÆÄ¿ö MOSFET ½ÃÀå : Áö¿ªº°

°æÀï ±¸µµ

ÀÌ¿ë °¡´ÉÇÑ Ä¿½ºÅ͸¶ÀÌÁî :

±â¾÷ Á¤º¸

¸ñÂ÷

Á¦1Àå °³¿ä

Á¦2Àå Á¶»ç ¹æ¹ý

Á¦3Àå ÁÖ¿ä ¿ä¾à

Á¦4Àå °í°´ÀÇ ¼Ò¸®

Á¦5Àå ¼¼°èÀÇ ÆÄ¿ö MOSFET ½ÃÀå

Á¦6Àå ºÏ¹Ì ÆÄ¿ö MOSFET ½ÃÀå Àü¸Á

Á¦7Àå ¾Æ½Ã¾ÆÅÂÆò¾ç ÆÄ¿ö MOSFET ½ÃÀå Àü¸Á

Á¦8Àå À¯·´ ÆÄ¿ö MOSFET ½ÃÀå Àü¸Á

Á¦9Àå ³²¹Ì ÆÄ¿ö MOSFET ½ÃÀå Àü¸Á

Á¦10Àå Áßµ¿ ¹× ¾ÆÇÁ¸®Ä« ÆÄ¿ö MOSFET ½ÃÀå Àü¸Á

Á¦11Àå ½ÃÀå ¿ªÇÐ

Á¦12Àå ½ÃÀå µ¿Çâ°ú ¹ßÀü

Á¦13Àå ±â¾÷ °³¿ä

Á¦14Àå Àü·«Àû Á¦¾È

Á¦15Àå Á¶»çȸ»ç ¼Ò°³¡¤¸éÃ¥»çÇ×

(ÁÖ : ±â¾÷ ¸®½ºÆ®´Â °í°´ ¿ä±¸¿¡ µû¶ó Ä¿½ºÅ͸¶ÀÌÁî °¡´ÉÇÕ´Ï´Ù.)

KSA
¿µ¹® ¸ñÂ÷

¿µ¹®¸ñÂ÷

Global power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) market is expected to grow at a robust pace in the forecast period owing to the increasing use of power electronics in various industries. Applications like electric vehicles (EVs), renewable energy systems, industrial motor drives, consumer electronics, telecommunications, and data centers all require power MOSFETs as these industries continue to expand. Moreover, power MOSFETs are essential to increasing energy efficiency. Additionally, power MOSFETs are in high demand due to their capacity to switch power effectively and minimize system energy losses, both of which are becoming increasingly important in light of the growing emphasis on lowering energy consumption and power losses. They contribute to the improvement of power conversion and control systems efficiency, which results in energy savings.

A power MOSFET is made to handle significant power levels. The insulated-gate bipolar transistor (IGBT) or thyristor, two other power semiconductor devices, offer similar advantages in terms of switching speed and efficiency at low voltages. It shares an isolated gate with the IGBT, making it simple to drive. They may have low gain, sometimes to the point where the gate voltage must be higher than the control voltage.

Today's electronics have a lot of features that help customers feel more at ease and sell more. Consumer safety standards have been raised and new business opportunities for improved electronics and devices have emerged as a result of technological advancements in electronic components, such as cellphones, computers, wireless communication, and cloud systems, among others. Power MOSFET has critical potential due to the fast enhancements in innovation, expanded productivity, and little size of electronic parts. Furthermore, the nano regulator is fundamental for dealing with cycles with minimal measure of force misfortune. It is anticipated that coordinating various electronic gadgets would give market players a lot of possibilities.

Market Overview
Forecast Period2024-2028
Market Size 2022USD 25.34 Billion
Market Size 2028USD 34.78 Billion
CAGR 2023-20285.68%
Fastest Growing SegmentIndustrial
Largest MarketNorth America

Improved Emphasis on Power Saving

It is expected to face power problems in the future because fossil fuels are running out quickly. It shouldn't come as a surprise that energy conservation is getting more and more attention. A MOSFET is a switching component used in electric vehicle management, an inverter, and power supply. MOSFETs are frequently utilized in industrial settings with low switching frequencies. The increasing emphasis on energy efficiency and renewable sources has made this industry its own. It is anticipated that renewable energy with the greatest number of installations would make up a larger portion of the power module. Thus, these factors are expected to drive the global power MOSFET market.

Wide use of Power MOSFETs in Semiconductors is Driving the Global Power MOSFET Market

MOSFETs are most generally involved semiconductor gadget in advanced and simple circuits, as well as the most frequently utilized power gadget. It is the primary tiny semiconductor, equipped for being cut back and efficiently manufactured for many applications. MOSFET scaling and contracting have driven the fast-outstanding development of electronic semiconductor innovation, empowering high-thickness incorporated circuits (ICs), for example, memory chips and microchips.

The power MOSFET is the world's most widely used power gadget. MOSFETs enjoy upper hands over bipolar intersection semiconductors in power hardware since they don't need a steady progression of driving current to stay in the ON state, offer more prominent exchanging speeds, lower exchanging power misfortunes, lower on-protections, and are less inclined to warm out of control. Power MOSFET impacts power supply, taking into consideration more prominent working frequencies, less size and weight, and bigger volume production. Thus, it is expected to boost the growth of global power MOSFET market.

Increased Dependence on Electrical Equipment and Machinery is Thriving the Growth of Global Power MOSFET Market

Machines today are extremely flexible, minimal, and productive in doing what they are made to do, to such an extent as they have assumed control over a ton of exercises that were done physically. The market for machines and electronic equipment is expected to continue growing or grow faster than demand in the coming years. The majority of machinery manages power with power MOSFETs. The MOSFET module is frequently utilized for voltage switching operations, and there are approximately 78,124 gigawatt (GW) of wind and solar installations worldwide. The rising reliance on electrical machinery and equipment, which directly benefits power MOSFET, is one of the primary factors influencing the market for global power MOSFET.

Growing Demand for Electric Vehicle Components to Propel the Growth of Global Power MOSFET Market

The global power MOSFET market is anticipated to expand over the forecast period as a result of government initiatives to provide tax rebates and subsidies to encourage the use of low-range, zero-emission vehicles worldwide. The global market is also anticipated to be driven by rising investments in the creation of hydrogen fueling and electric vehicle charging stations. In addition, it is anticipated that the global market will benefit from a decrease in the price of electric vehicle batteries as a result of their widespread production and ongoing technological advancements. Another significant factor that would propel the global market is the high demand for electric vehicle equipment and components like portable chargers, adapters, connectors, and charging cables.

Limitations in Operations and High Costs are Expected to Hinder the Growth of Global Power MOSFET Market

Limitations like breakdown caused by gate oxide, drain to source voltage, maximum drain current, and temperature prevent this market from expanding. Because of its thinness, gate oxide has a shallow breakdown limit. The MOSFET's life is further shortened by a high gate to source voltage, and this has little to no effect on reduction. The MOSFET too needs a particular measure of channel to source voltage and current; A breakdown could occur quickly if these requirements are not met.

Additionally, power MOSFET's have a tendency to leak current, impacting its market growth. The high installation costs for power MOSFETs may limit market expansion as this component raises vehicle prices. Due to the vehicle's numerous technological components, its serviceability is challenging and necessitates skilled personnel. The lifespan of systems with complex architectures is shorter. Subsequently, it is guessed that the factors referenced above are expected to cause hindrance to the growth of global power MOSFET market.

Market Segmentation

The global power MOSFET market is segmented based on type, power rate, channel type, application, and region. Based on type, the market is bifurcated into depletion mode and enhancement mode. Based on power rate, the market is bifurcated into high power, medium power, and low power. Based on channel type, the market is bifurcated into N-channel and P-channel. Based on application, the market is bifurcated into energy & power, inverter & ups, consumer electronics, automotive, industrial, and others. Based on region, the market is further bifurcated into North America, Asia-Pacific, Europe, South America, and Middle East & Africa.

Market players

The main market players in the global power MOSFET market are Digi-Key Corporation, Infineon Technologies AG, Renesas Electronics Corporation, Toshiba Corporation, IXYS Corporation, STMicroelectronics N.V., Microchip Technology Inc., Power Integration Inc., Sumitomo Electric Industries Ltd., and Hitachi Power Semiconductor Device Ltd.

Report Scope:

In this report, global power MOSFET market has been segmented into the following categories, in addition to the industry trends which have also been detailed below.

Power MOSFET Market, By Type:

Enhancement Mode

Power MOSFET Market, By Channel Type:

Power MOSFET Market, By Application:

Power MOSFET Market, By Region:

Competitive Landscape

Available Customizations:

Company Information

Table of Contents

1. Product Overview

2. Research Methodology

3. Executive Summary

4. Voice of Customers

5. Global Power MOSFET Market

6. North America Power MOSFET Market Outlook

7. Asia-Pacific Power MOSFET Market Outlook

8. Europe Power MOSFET Market Outlook

9. South America Power MOSFET Market Outlook

10. Middle East & Africa Power MOSFET Market Outlook

11. Market Dynamics

12. Market Trends & Developments

13. Company Profiles

14. Strategic Recommendations

15. About Us & Disclaimer

(Note: The companies list can be customized based on the client requirements.)

(ÁÖ)±Û·Î¹úÀÎÆ÷¸ÞÀÌ¼Ç 02-2025-2992 kr-info@giikorea.co.kr
¨Ï Copyright Global Information, Inc. All rights reserved.
PC¹öÀü º¸±â