Stratistics MRC에 따르면 세계의 SiC(실리콘 카바이드) 반도체 디바이스 시장은 2025년 36억 달러를 차지하고, 2032년에는 160억 4,000만 달러에 달할 것으로 예측되며, 예측 기간 중 CAGR은 23.8%입니다.
SiC(실리콘 카바이드) 반도체 디바이스는 실리콘과 탄소의 화합물인 탄화규소로 만들어진 고도의 전자 부품으로, 탁월한 열전도성, 고전계 강도, 와이드 밴드갭으로 알려져 있습니다., 온도, 스위칭 주파수에서 작동할 수 있기 때문에 고전력 및 고주파 용도에 사용됩니다. SiC 반도체는 효율성 향상, 에너지 손실 감소, 컴팩트한 시스템 설계, 성능 및 신뢰성이 중요한 전기자동차, 재생에너지 시스템, 산업용 모터 드라이브 및 항공우주 용도에 이상적입니다.
급증하는 전기자동차(EV)의 보급
전기자동차(EV)의 인기가 높아짐에 따라 SiC(실리콘 카바이드) 반도체 디바이스 시장의 확대를 가속화하고 있습니다. 자동차 제조업체가 성능 향상, 충전 가속화 및 항속 거리 연장을 중시함에 따라 SiC 부품 수요가 증가하고 있습니다.
높은 제조 비용과 재료 비용
높은 제조 비용과 재료 비용은 SiC(실리콘 카바이드) 반도체 디바이스 시장의 성장을 크게 방해하고 있습니다. 비용이 많이 들고, 특히 중소기업에서 대량 채용을 제한하고 시장 경쟁력을 제약하고 있으며, 그 결과 비용 중심 용도는 기존 실리콘 기반 대체품을 선호하는 경향이 있으며 SiC 디바이스의 광범위한 시장 침투를 방해하고 있습니다.
신재생에너지 및 전력 일렉트로닉스
신재생에너지원의 채용 확대와 파워 일렉트로닉스의 진보가 SiC(실리콘 카바이드) 반도체 디바이스 시장을 크게 뒷받침하고 있습니다. 탈탄소화를 위한 세계의 움직임이 강해짐에 따라, 재생가능 에너지 시스템에서 SiC 기반의 솔루션에 대한 수요가 높아지고, 클린 에너지 및 전력 일렉트로닉스의 분야에서 기술 혁신이 촉진되어 시장 기회가 확대되고 있습니다.
제한된 웨이퍼 공급 및 품질 문제
제한된 웨이퍼 공급과 지속적인 품질 문제는 SiC(실리콘 카바이드) 반도체 디바이스 시장의 성장을 크게 방해하고 있습니다. 또한 전기자동차 및 파워 일렉트로닉스와 같은 고성장 분야 수요 증가를 충족시킬 수 없기 때문에 기술 진보가 저해되어 SiC 디바이스 개발에 대한 잠재적인 투자가 억제됩니다.
COVID-19의 영향
COVID-19 팬데믹은 당초 공급망 중단, 공장 가동 정지, 산업 활동 저하로 SiC(실리콘 카바이드) 반도체 디바이스 시장을 혼란시켰습니다. 팬데믹은 디지털 변혁을 가속화하여 고성능 전자기기에 SiC 디바이스의 채용을 뒷받침해 COVID 후 상황에서의 회복력과 적응력을 가져왔습니다.
예측기간 동안 파워모듈 분야가 최대화될 전망
파워 모듈 분야는 에너지 효율 향상, 고전압 능력, 뛰어난 열 성능을 제공함으로써 예측 기간 동안 최대 시장 점유율을 차지할 것으로 예측됩니다. 고속 스위칭 속도와 저에너지 손실에 대한 수요가 증가함에 따라 SiC 파워 모듈의 채용이 가속화되어 기술적 진보가 촉진되어 고성능 파워 일렉트로닉스 시스템에 대한 통합이 증가하고 있습니다.
LED 조명 분야는 예측 기간 중 가장 높은 CAGR이 예상된다.
예측 기간 동안 고효율 파워 일렉트로닉스에 대한 수요로 인해 LED 조명 분야가 가장 높은 성장률을 보일 것으로 예측됩니다.
예측기간 중 산업자동화 개선, 전기자동차 보급, 재생가능에너지 도입으로 아시아태평양이 최대 시장 점유율을 차지할 것으로 예측됩니다. 그린 기술과 에너지 효율을 장려하는 정부 프로그램도 시장의 성장을 가속해, 아시아태평양을 SiC 반도체의 개발과 생산의 주요 거점으로서 확립하고 있습니다.
예측기간 동안 전기자동차(EV) 섹터 확대, 신재생에너지 채용, 산업 자동화의 진보로 북미가 가장 높은 CAGR을 나타낼 것으로 예측됩니다. 정부 지원 정책, 스마트 그리드 인프라에 대한 투자 증가, 에너지 효율적인 솔루션에 대한 수요 증가가 시장 도입을 더욱 가속화하고 있으며, 북미는 SiC 기술 개발의 중요한 거점이 되고 있습니다.
According to Stratistics MRC, the Global Silicon Carbide Semiconductor Devices Market is accounted for $3.6 billion in 2025 and is expected to reach $16.04 billion by 2032 growing at a CAGR of 23.8% during the forecast period. Silicon Carbide (SiC) semiconductor devices are advanced electronic components made from silicon carbide, a compound of silicon and carbon known for its exceptional thermal conductivity, high electric field strength, and wide bandgap. These devices, including diodes, MOSFETs, and power modules, are used in high-power and high-frequency applications due to their ability to operate at higher voltages, temperatures, and switching frequencies compared to traditional silicon-based devices. SiC semiconductors offer improved efficiency, reduced energy losses, and compact system designs, making them ideal for electric vehicles, renewable energy systems, industrial motor drives, and aerospace applications where performance and reliability are critical.
Surging Electric Vehicle (EV) Adoption
The growing popularity of electric vehicles (EVs) is accelerating the expansion of the Silicon Carbide (SiC) semiconductor device market. SiC devices offer improved efficiency, faster switching, and stronger thermal conductivity, making them excellent for EV applications like inverters, onboard chargers, and powertrains. The demand for SiC components is increasing as automakers place a higher priority on enhanced performance, faster charging, and longer range. The market is expanding and SiC semiconductor technology innovation is being stimulated by this increasing integration in EV power electronics.
High Manufacturing & Material Costs
High manufacturing and material costs significantly hinder the growth of the Silicon Carbide (SiC) Semiconductor Devices Market. The complex fabrication process and the expensive nature of raw materials like high-purity silicon carbide wafers lead to increased production expenses. These high costs limit mass adoption, especially among small and mid-sized manufacturers, and constrain market competitiveness. Consequently, cost-sensitive applications tend to favor traditional silicon-based alternatives, impeding broader market penetration of SiC devices.
Renewable Energy & Power Electronics
The growing adoption of renewable energy sources and advancements in power electronics are significantly propelling the Silicon Carbide (SiC) Semiconductor Devices Market. SiC devices offer high efficiency, faster switching, and better thermal performance, making them ideal for solar inverters, wind turbines, and smart grid applications. As the global push toward decarbonization intensifies, the demand for SiC-based solutions in renewable energy systems rises, driving innovation and expanding market opportunities across the clean energy and power electronics sectors.
Limited Wafer Supply & Quality Issues
Limited wafer supply and persistent quality issues are significantly hindering the growth of the Silicon Carbide (SiC) semiconductor devices market. These constraints lead to production delays, increased manufacturing costs, and reduced yield rates, affecting supply chain efficiency and overall market scalability. Moreover, the inability to meet rising demand from high-growth sectors like electric vehicles and power electronics hampers technological advancements and discourages potential investments in SiC device development.
Covid-19 Impact
The COVID-19 pandemic initially disrupted the Silicon Carbide (SiC) Semiconductor Devices Market due to supply chain interruptions, factory shutdowns, and reduced industrial activities. However, the market gradually rebounded with increased demand for energy-efficient solutions in electric vehicles and renewable energy. The pandemic accelerated digital transformation, boosting the adoption of SiC devices in high-performance electronics, leading to a resilient and adaptive recovery in the post-COVID landscape.
The power modules segment is expected to be the largest during the forecast period
The power modules segment is expected to account for the largest market share during the forecast period as it offers enhanced energy efficiency, high voltage capability, and superior thermal performance. These modules enable compact, lightweight designs, making them ideal for electric vehicles, renewable energy systems, and industrial applications. The rising demand for fast switching speeds and lower energy losses is accelerating the adoption of SiC power modules, thereby driving technological advancements and increasing their integration across high-performance power electronics systems.
The LED lighting segment is expected to have the highest CAGR during the forecast period
Over the forecast period, the LED lighting segment is predicted to witness the highest growth rate, due to demand for power electronics with great efficiency. SiC devices are perfect for LED power supply and drivers because of their enhanced thermal conductivity, increased voltage tolerance, and increased energy efficiency. The need for dependable and small SiC-based solutions increases as energy-efficient lighting becomes more widely used, particularly in commercial and industrial settings.
During the forecast period, the Asia Pacific region is expected to hold the largest market share because of improvements in industrial automation, the growing use of electric cars, and the incorporation of renewable energy. Demand for SiC devices is increasing as a result of significant investments made in high-efficiency power electronics by nations like China, Japan, and South Korea. Government programs encouraging green technology and energy efficiency also hasten market growth, establishing Asia Pacific as a major center for the development and production of SiC semiconductors.
Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, owing to expanding electric vehicle (EV) sector, renewable energy adoption, and advancements in industrial automation. SiC devices offer superior efficiency, thermal performance, and durability compared to traditional silicon, making them ideal for high-power applications. Supportive government policies, increasing investments in smart grid infrastructure, and rising demand for energy-efficient solutions are further accelerating market adoption, positioning North America as a key hub for SiC technology development.
Key players in the market
Some of the key players profiled in the Silicon Carbide Semiconductor Devices Market include Wolfspeed, Inc., STMicroelectronics, Infineon Technologies AG, ON Semiconductor, ROHM Semiconductor, Mitsubishi Electric Corporation, Toshiba Corporation, Littelfuse, Inc., Fuji Electric Co., Ltd., Renesas Electronics Corporation, Microchip Technology Inc., United Silicon Carbide, Inc., Power Integrations, Inc., Global Power Technologies Group, SemiQ Inc., Diodes Incorporated and Alpha and Omega Semiconductor.
In February 2025, Mitsubishi Electric has reached an agreement with HD Renewable Energy, a Taipei-based solar power and battery energy storage systems (BESS) developer, to collaborate on projects aimed at achieving carbon neutrality.
In January 2025, Mitsubishi Electric Corporation, has announced plans to acquire a strategic stake in Bengaluru based Gervigreind Data Science Pvt. Ltd. This collaboration focuses on co developing and marketing no code data analysis and report generation tools that integrate seamlessly with Mitsubishi Electric's factory automation (FA) equipment and GENESIS64(TM) SCADA software-developed by ICONICS, its U.S.