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IGBT and Super Junction MOSFET Market Size, Share, Trends, Industry Analysis Report: By Type, Application, and Region - Market Forecast, 2025-2034
»óǰÄÚµå : 1697915
¸®¼­Ä¡»ç : Polaris Market Research
¹ßÇàÀÏ : 2025³â 03¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 129 Pages
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Polaris Market ResearchÀÇ ÃֽŠÁ¶»ç¿¡ µû¸£¸é ¼¼°èÀÇ IGBT¡¤ÃÊÁ¢ÇÕ MOSFET ½ÃÀå ±Ô¸ð´Â 2034³â±îÁö 507¾ï 8,000¸¸ ´Þ·¯¿¡ ´ÞÇÒ Àü¸ÁÀÔ´Ï´Ù. ÀÌ ¸®Æ÷Æ®´Â ÇöÀç ½ÃÀå ¿ªÇÐÀÇ »ó¼¼ ÀλçÀÌÆ®¿Í ÇâÈÄ ½ÃÀå ¼ºÀå¿¡ °üÇÑ ºÐ¼®À» Á¦°øÇϰí ÀÖ½À´Ï´Ù.

IGBT¿Í ½´ÆÛÁ¤¼Ç MOSFETÀº ´Ù¾çÇÑ ¿ëµµ¿¡¼­ °íÈ¿À² ¿¡³ÊÁö º¯È¯ ¹× Àü·Â °ü¸®¸¦ À§ÇØ ¼³°èµÈ ÷´Ü ÆÄ¿ö ¹ÝµµÃ¼ ¼ÒÀÚ·Î, IGBT ¹× ½´ÆÛÁ¤¼Ç MOSFET ½ÃÀåÀÇ ¼ºÀåÀ» ÁÖµµÇÏ´Â ÁÖ¿ä µ¿ÇâÀº »ê¾÷°è°¡ Àü±âÀÚµ¿Â÷, »ê¾÷ ÀÚµ¿È­ ¹× Àç»ý¿¡³ÊÁö ½Ã½ºÅÛ¿ë ¼ÒÇü, ¿¡³ÊÁö È¿À²ÀÌ ³ôÀº Àü·ÂÀüÀÚ ¼Ö·ç¼ÇÀ¸·ÎÀÇ ÀüȯÀÌ °¡¼ÓÈ­µÇ°í ÀÖ´Ù´Â Á¡ÀÔ´Ï´Ù. Àü±âÀÚµ¿Â÷, »ê¾÷ ÀÚµ¿È­ ¹× Àç»ý¿¡³ÊÁö ½Ã½ºÅÛ¿¡¼­ ¼ÒÇüÀÇ ¿¡³ÊÁö È¿À²ÀûÀÎ ÆÄ¿ö ÀÏ·ºÆ®·Î´Ð½º¸¦ ¿ä±¸Çϸ鼭 °íÃâ·Â ¹Ðµµ ¼Ö·ç¼ÇÀ¸·ÎÀÇ ÀüȯÀÌ °¡¼ÓÈ­µÇ°í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ º¯È­´Â ¹ÝµµÃ¼ ±â¼úÀÇ Áøº¸¸¦ °¡¼ÓÈ­ÇÏ¿© ¿­ °ü¸® °³¼±, ½ºÀ§Äª ¼Õ½Ç °¨¼Ò, ½Ã½ºÅÛ ¼º´É Çâ»óÀ¸·Î À̾îÁö°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ½Ç¸®ÄÜ Ä«¹ÙÀ̵å(SiC) ¹× ÁúÈ­°¥·ý(GaN)°ú °°Àº Â÷¼¼´ë Àç·áÀÇ Áö¼ÓÀûÀÎ °³¹ß·Î ÆÄ¿ö ¹ÝµµÃ¼ ¼ÒÀÚÀÇ È¿À²°ú ½Å·Ú¼ºÀÌ ÃÖÀûÈ­µÇ°í ÀÖ½À´Ï´Ù.

IGBT ¹× ½´ÆÛÁ¤¼Ç MOSFET ½ÃÀå È®´ë¿¡ ¹ÚÂ÷¸¦ °¡Çϰí ÀÖ´Â ¶Ç ´Ù¸¥ Ãß¼¼´Â Áö¼Ó°¡´ÉÇÏ°í ¿¡³ÊÁö È¿À²ÀûÀÎ Àü·Â ¼Ö·ç¼Ç¿¡ ´ëÇÑ °ü½ÉÀÌ ³ô¾ÆÁö°í ÀÖ´Ù´Â Á¡ÀÔ´Ï´Ù. Àü ¼¼°è¿¡¼­ ¿¡³ÊÁö ¼Òºñ°¡ Áõ°¡ÇÔ¿¡ µû¶ó »ê¾÷°è´Â ÷´Ü ¹ÝµµÃ¼ ±â¼úÀ» ÅëÇØ Àü·Â ¼Õ½ÇÀ» ÃÖ¼ÒÈ­ÇÏ°í ½Ã½ºÅÛ È¿À²À» ³ôÀÌ´Â µ¥ Á¡Á¡ ´õ ¸¹Àº ³ë·ÂÀ» ±â¿ïÀ̰í ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ Ãß¼¼´Â Àü±â ¸ðºô¸®Æ¼, ½º¸¶Æ® ±×¸®µå, °íÈ¿À² »ê¾÷ Àåºñ µîÀÇ ºÐ¾ß¿¡¼­ ƯÈ÷ µÎµå·¯Áö¸ç, ÆÄ¿ö ¹ÝµµÃ¼ ¼Ö·ç¼ÇÀº ź¼Ò¹ßÀÚ±¹À» ÁÙÀÌ´Â µ¥ Áß¿äÇÑ ¿ªÇÒÀ» Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ ¹ÝµµÃ¼ Á¦Á¶ÀÇ Áö¼ÓÀûÀÎ ¿¬±¸°³¹ßÀº Àü·Â ó¸® ´É·Â Çâ»ó, µð¹ÙÀ̽º ¼ö¸í ¿¬Àå, µ¿ÀÛ ¾ÈÁ¤¼º Çâ»ó¿¡ ±â¿©Çϰí ÀÖÀ¸¸ç, ÀÌ´Â ½ÃÀåÀÇ Àå±âÀûÀÎ ¼ºÀå ±Ëµµ¸¦ Áö¿øÇϰí ÀÖ½À´Ï´Ù.

IGBT ¹× ½´ÆÛÁ¤¼Ç MOSFET ½ÃÀå º¸°í¼­ ÇÏÀ̶óÀÌÆ®

À¯Çüº°·Î´Â IGBT ºÎ¹®ÀÌ 2024³â IGBT ¹× ½´ÆÛÁ¤¼Ç MOSFET ½ÃÀåÀ» ÁÖµµÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù. ÀÌ´Â ÁÖ·Î È¿À²¼º°ú ½Å·Ú¼ºÀÌ Áß¿äÇÑ »ê¾÷ ÀÚµ¿È­, Àç»ý¿¡³ÊÁö ½Ã½ºÅÛ, Àü±âÀÚµ¿Â÷ µî °íÀü·Â ¿ëµµ¿¡ ±¤¹üÀ§ÇÏ°Ô »ç¿ëµÇ°í Àֱ⠶§¹®ÀÔ´Ï´Ù.

¿ëµµº°·Î º¸¸é Àü ¼¼°è¿¡¼­ Áö¼Ó°¡´ÉÇÑ ±³Åë¼ö´ÜÀ¸·ÎÀÇ Àüȯ°ú Àü ¼¼°è Àü±âÀÚµ¿Â÷ äÅà Áõ°¡·Î ÀÎÇØ Àü±âÀÚµ¿Â÷ ºÐ¾ß°¡ ¿¹Ãø ±â°£ Áß °¡Àå ºü¸£°Ô ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

2024³â¿¡´Â ¾Æ½Ã¾ÆÅÂÆò¾çÀÌ IGBT ¹× ½´ÆÛÁ¤¼Ç MOSFET ½ÃÀå¿¡¼­ °¡Àå Å« Á¡À¯À²À» Â÷ÁöÇÒ °ÍÀ¸·Î ¿¹»óµÇ¸ç, ƯÈ÷ Áß±¹, ÀϺ», Çѱ¹ µîÀÇ ±¹°¡¿¡¼­ ±Þ¼ÓÇÑ »ê¾÷È­, µµ½ÃÈ­ ¹× È®¸³µÈ ÀüÀÚÁ¦Ç° Á¦Á¶ »ýŰ谡 Áö¿øµÉ °ÍÀ¸·Î º¸ÀÔ´Ï´Ù.

ºÏ¹Ì IGBT ½´ÆÛÁ¤¼Ç MOSFET ½ÃÀåÀº Àü±â À̵¿¼º, Àç»ý¿¡³ÊÁö ÇÁ·ÎÁ§Æ®, µ¥ÀÌÅͼ¾ÅÍ ÀÎÇÁ¶ó È®Àå¿¡ ´ëÇÑ ´ë±Ô¸ð ÅõÀÚ·Î ÀÎÇØ ¿¹Ãø ±â°£ Áß °¡Àå ºü¸¥ ¼Óµµ·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹»óµË´Ï´Ù.

¼¼°èÀÇ ÁÖ¿ä ±â¾÷¿¡´Â Alpha and Omega Semiconductor, Diodes Incorporated, Fuji Electric Co., Ltd., Infineon Technologies AG, Littelfuse, MACMIC, Mitsubishi Electric Corporation, NXP Semiconductors, ROHM Co., Ltd., Semiconductor Components Industries, LLC, Semikron Danfoss, StarPower Europe AG, STMicroelectronics, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Vishay Intertechnology, Inc. µîÀÌ ÀÖ½À´Ï´Ù.

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The global IGBT and super junction MOSFET market size is expected to reach USD 50.78 billion by 2034, according to a new study by Polaris Market Research. The report "IGBT and Super Junction MOSFET Market Size, Share, Trends, Industry Analysis Report: By Type (IGBT and Super Junction MOSFET), Application, and Region (North America, Europe, Asia Pacific, Latin America, and Middle East & Africa) - Market Forecast, 2025-2034" gives a detailed insight into current market dynamics and provides analysis on future market growth.

IGBT and super junction MOSFET are advanced power semiconductor devices designed for high-efficiency energy conversion and power management in various applications. A key trend driving the IGBT and super junction MOSFET market growth is the increasing shift towards high-power density solutions, as industries demand compact and energy-efficient power electronics for electric vehicles, industrial automation, and renewable energy systems. This shift has accelerated advancements in semiconductor technologies, leading to improved thermal management, reduced switching losses, and enhanced system performance. Additionally, the continuous development of next-generation materials, such as silicon carbide (SiC) and gallium nitride (GaN), is optimizing the efficiency and reliability of power semiconductor devices.

Another trend fueling the IGBT and Super Junction MOSFET market expansion is the growing emphasis on sustainable and energy-efficient power solutions. With rising global energy consumption, industries are increasingly focused on minimizing power losses and enhancing system efficiency through advanced semiconductor technologies. This trend is particularly evident in applications such as electric mobility, smart grids, and high-efficiency industrial equipment, where power semiconductor solutions play a crucial role in reducing carbon footprints. Furthermore, ongoing research and development efforts in semiconductor fabrication are contributing to improved power handling capabilities, longer device lifespans, and enhanced operational stability, supporting the market's long-term growth trajectory.

IGBT and Super Junction MOSFET Market Report Highlights

In terms of type, the IGBT segment led the IGBT and super junction MOSFET market in 2024, primarily due to its extensive use in high-power applications such as industrial automation, renewable energy systems, and electric vehicles, where efficiency and reliability are critical.

Based on application, the electric vehicle segment is anticipated to experience the fastest growth during the forecast period, fueled by the global shift toward sustainable transportation and the increasing adoption of EVs worldwide.

In 2024, Asia Pacific accounted for the largest share of the IGBT and super junction MOSFET market, supported by rapid industrialization, urbanization, and a well-established electronics manufacturing ecosystem, particularly in countries like China, Japan, and South Korea.

The North America IGBT and super junction MOSFET market is expected to grow at the fastest rate during the forecast period, driven by significant investments in electric mobility, renewable energy projects, and the expansion of data center infrastructure.

A few global key market players include Alpha and Omega Semiconductor; Diodes Incorporated; Fuji Electric Co., Ltd.; Infineon Technologies AG; Littelfuse; MACMIC; Mitsubishi Electric Corporation; NXP Semiconductors; ROHM Co., Ltd.; Semiconductor Components Industries, LLC; Semikron Danfoss; StarPower Europe AG; STMicroelectronics; TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION; and Vishay Intertechnology, Inc.

Polaris Market Research has segmented the IGBT and super junction MOSFET market report on the basis of type, application, and region:

By Type Outlook (Revenue, USD Billion, 2020-2034)

By Application Outlook (Revenue, USD Billion, 2020-2034)

By Regional Outlook (Revenue, USD Billion, 2020-2034)

Table of Contents

1. Introduction

2. Executive Summary

3. Research Methodology

4. Global IGBT and Super Junction MOSFET Market Insights

5. Global IGBT and Super Junction MOSFET Market, by Type

6. Global IGBT and Super Junction MOSFET Market, by Application

7. Global IGBT and Super Junction MOSFET Market, by Geography

8. Competitive Landscape

9. Company Profiles

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