GaN Semiconductor Devices Market Research Report Market Forecast till 2030
상품코드:1405198
리서치사:Market Research Future
발행일:2023년 12월
페이지 정보:영문 188 Pages
라이선스 & 가격 (부가세 별도)
한글목차
GaN 반도체 디바이스 세계 시장은 예측 기간 동안 20.5%의 CAGR을 기록할 것으로 예상됩니다. 세계 에너지 수요가 증가함에 따라 GaN 기술로의 전환은 화석연료의 부산물을 줄이면서 에너지 수요를 충족시키는 데 도움이 될 것으로 보입니다.
지역별 인사이트
아시아태평양이 2022년 46.9%로 가장 큰 시장 점유율을 차지했으며, 예측 기간 동안에도 그 우위를 유지할 것으로 보입니다.
북미 지역이 조사 기간 동안 시장을 주도할 것으로 예상됩니다. 공공 기관이 GaN 기반 전력 반도체 가젯의 발전을 촉진함에 따라 북미에서 MBE 프레임워크에 대한 관심이 높아질 것으로 예상됩니다.
유럽은 예측 기간 동안 시장에서 가장 빠른 성장세를 보일 것으로 예상됩니다.
기타 지역 시장은 GaN 반도체의 발전에 대한 막대한 투기와 이 지역의 여러 지역에서 현대식 하드웨어가 널리 사용되고 있기 때문에 예측 기간 동안 크게 성장할 것으로 예상됩니다.
이 보고서는 GaN 반도체 디바이스 세계 시장을 조사 분석하여 시장 역학, 지역 및 부문 분석, 기업 개요 등을 제공합니다.
목차
제1장 주요 요약
시장 매력 분석
GaN 반도체 디바이스 세계 시장 : 디바이스별
GaN 반도체 디바이스 세계 시장 : 업계별
GaN 반도체 디바이스 세계 시장 : 웨이퍼 사이즈별
GaN 반도체 디바이스 세계 시장 : 유형별
GaN 반도체 디바이스 세계 시장 : 지역별
제2장 시장 서론
제3장 조사 방법
제4장 시장 역학
서론
성장 촉진요인
군사의 GaN RF 반도체 디바이스 채용 증가
가전제품과 자동차의 GaN 파워 반도체 수요
성장 억제요인
대체품 이용 가능성
기회
전기자동차와 하이브리드 전기자동차의 용도
5G 네트워크 도래
COVID-19의 영향 분석
반도체 제조업체에 대한 영향
컴포넌트 제조업체에 대한 영향
디바이스 제조업체에 대한 영향
공급망 지연에 대한 영향
제5장 시장 요인 분석
공급망 분석
원재료
GaN 웨이퍼 제조
디바이스 제조
유통
최종사용자
Porter's Five Forces 분석 모델
제6장 GaN 반도체 디바이스 세계 시장 : 디바이스별
서론
트랜지스터
다이오드
정류기
전원 IC
서플라이, 인버터
앰프
조명, 레이저
스위칭 시스템
제7장 GaN 반도체 디바이스 세계 시장 : 업계별
서론
자동차
산업
방위·항공우주
가전제품
통신
의료
제8장 GaN 반도체 디바이스 세계 시장 : 웨이퍼 사이즈별
서론
2인치
4인치
6인치
6인치 이상
제9장 GaN 반도체 디바이스 세계 시장 : 유형별
서론
파워 반도체
RF 반도체
광반도체
제10장 GaN 반도체 디바이스 세계 시장 : 지역별
서론
북미
미국
캐나다
멕시코
유럽
독일
프랑스
영국
이탈리아
스페인
기타 유럽
아시아태평양
중국
인도
일본
한국
기타 아시아태평양
기타 지역
중남미
중동 및 아프리카
제11장 경쟁 상황
경쟁 개요
경쟁 벤치마킹
시장 점유율 분석
주요 발전과 성장 전략
신제품 발매/서비스 전개
인수합병
합작투자
확대
제12장 기업 개요
KONINKLIJKE PHILIPS N.V.
QORVO
EFFICIENT POWER CONVERSION CORPORATION
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
INTEL CORPORATION
GLOBALFOUNDRIES
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP
FUJITSU LTD
PANASONIC CORPORATION
TEXAS INSTRUMENTS
OSRAM OPTO-SEMICONDUCTORS
WOLFSPEED, INC.
TOSHIBA
AIXTRON SE
INFINEON TECHNOLOGIES
ROHM COMPANY LIMITED
NXP SEMICONDUCTORS
제13장 부록
ksm
영문 목차
영문목차
Market Overview
GaN Semiconductor Devices Market is expected to register a CAGR of 20.5 % during the forecast period. Gallium nitride (GaN) is a paired III/V direct bandgap semiconductor that is appropriate for high-power semiconductors equipped for working at high temperatures. It is an extremely hard, precisely stable wide bandgap semiconductor that fundamentally beats silicon-based devices with regards to breakdown strength, exchanging speed, warm conductivity, and on-opposition. GaN is starting to see reception because of its better properties over silicon devices, like amazing high-recurrence attributes. As worldwide requirement for energy expands, a transition to GaN innovation will assist with fulfilling need while downplaying fossil fuel byproducts. GaN plan and joining has been displayed to convey cutting edge power semiconductors with a carbon impression multiple times lower than more seasoned, more slow silicon chips.
The market for GaN semiconductor devices is expected to create in the future because of the rising utilization of electric and half-breed electric vehicles. A vehicle with an electric engine fueled by a battery that can be charged remotely is called an electric vehicle. Electric vehicles utilize high-proficiency power semiconductors and coordinated circuits made of gallium nitride semiconductors. GaN semiconductors devices offer a few advantages over silicon, including 3x the band hole and 10x the breakdown electric field strength in electric vehicle applications.
Market Segmentation
Based on Device, the GaN Semiconductor Devices Market is divided into Supply and Inverter, Transistor, Rectifier, Diode, Power IC, Amplifiers, Switching Systems, Lighting and Laser, and Others.
In terms of Vertical, the Market is classified into Automotive, Industrial, Defense & Aerospace, Consumer Electronics, Telecommunication, Medical and Others. The Type segment is further divided into Power semiconductors, RF semiconductors, and Opto semiconductors.
Regional Insights
As far as revenue, Asia-Pacific held the biggest portion of 46.9% in the GaN Semiconductor Devices Market in 2022 and is supposed to keep up with its predominance during the conjecture time frame. The presence of central participants and an emphasis on foundation improvement in the region add to market development. The Asia Pacific market for GaN semiconductor devices is expected to develop altogether over the figure period.
North America is expected to rule the GaN semiconductor devices market over the review period due to the huge consumptions made in gallium nitride semiconductor advancements and the region's far-reaching utilization of refined gadgets across a few business verticals. GaN-based power semiconductor gadget advancement drives by the public authority are expected to increment interest in MBE frameworks in North America.
Europe is supposed to observe the quickest development in the GaN Semiconductor Devices market during the conjecture time frame because of expansion popular for semiconductor devices from the military, crisis clinical benefits, and seaward oil and gas improvement.
The GaN semiconductor devices market in Rest of the World is expected to develop considerably over the conjecture period because of the huge speculations made in gallium nitride semiconductor advancements and the broad utilization of contemporary hardware in the region's various areas.
Major Players
The key players in the GaN semiconductor devices market are Fujitsu Ltd., Panasonic Coporation, Texas Instruments, Osram Opto-Semiconductors, Cree Incorporate, Toshiba, AixtronSE, Infineon Technologies, ROHM Company Limited, NXP Semiconductors, KoninklijkePhilips N.V., and Others.
TABLE OF CONTENTS
TABLE OF CONTENTS
1 EXECUTIVE SUMMARY 16
1.1 MARKET ATTRACTIVENESS ANALYSIS 17
1.1.1 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY DEVICE 17
1.1.2 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY VERTICAL 18
1.1.3 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY WAFER SIZE 19
1.1.4 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY TYPE 20
1.1.5 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY REGION 21
2 MARKET INTRODUCTION 22
2.1 DEFINITION 22
2.2 SCOPE OF THE STUDY 22
2.3 RESEARCH OBJECTIVE 22
2.4 MARKET STRUCTURE 23
3 RESEARCH METHODOLOGY 24
3.1 DATA MINING 24
3.2 SECONDARY RESEARCH 25
3.3 PRIMARY RESEARCH 25
3.3.1 PRIMARY INTERVIEWS AND INFORMATION GATHERING PROCESS 26
3.3.2 BREAKDOWN OF PRIMARY RESPONDENTS 26
3.4 RESEARCH METHODOLOGY FOR MARKET SIZE ESTIMATION 28
3.4.1 BOTTOM-UP APPROACH 29
3.4.2 TOP-DOWN APPROACH 29
3.5 DATA VALIDATION 30
3.6 ASSUMPTIONS & LIMITATIONS 30
4 MARKET DYNAMICS 31
4.1 INTRODUCTION 31
4.2 DRIVERS 32
4.2.1 INCREASING ADOPTION OF GAN RF SEMICONDUCTOR DEVICES IN MILITARY 32
4.2.2 DEMAND FOR GAN POWER SEMICONDUCTORS IN CONSUMER ELECTRONICS AND AUTOMOTIVE 32
4.3 RESTRAINT 33
4.3.1 AVAILABILITY OF SUBSTITUTES 33
4.4 OPPORTUNITIES 33
4.4.1 APPLICATIONS IN ELECTRIC AND HYBRID ELECTRIC VEHICLES 33
4.4.2 ADVENT OF 5G NETWORK 34
4.5 COVID - 19 IMPACT ANALYSIS 34
4.5.1 IMPACT ON SEMICONDUCTOR MANUFACTURERS 34
4.5.2 IMPACT ON C0MPONENT MANUFACTURERS 34
4.5.3 IMPACT ON DEVICES MANUFACTURERS 34
4.5.4 IMPACT ON SUPPLY CHAIN DELAYS 34
5 MARKET FACTOR ANALYSIS 35
5.1 SUPPLY CHAIN ANALYSIS 35
5.1.1 RAW MATERIALS 35
5.1.2 GAN WAFER MANUFACTURING 36
5.1.3 DEVICE MANUFACTURING 36
5.1.4 DISTRIBUTION 36
5.1.5 END USERS 36
5.2 PORTER'S FIVE FORCES MODEL 37
5.2.1 BARGAINING POWER OF SUPPLIERS 37
5.2.2 BARGAINING POWER OF BUYERS 38
5.2.3 THREAT OF NEW ENTRANTS 38
5.2.4 THREAT OF SUBSTITUTES 38
5.2.5 INTENSITY OF RIVALRY 38
6 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY DEVICE 39
6.1 INTRODUCTION 39
6.2 TRANSISTOR 40
6.3 DIODE 40
6.4 RECTIFIER 40
6.5 POWER IC 40
6.6 SUPPLY AND INVERTER 40
6.7 AMPLIFIERS 41
6.8 LIGHTING AND LASER 41
6.9 SWITCHING SYSTEMS 41
7 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY VERTICAL 42
7.1 INTRODUCTION 42
7.2 AUTOMOTIVE 43
7.3 INDUSTRIAL 43
7.4 DEFENSE & AEROSPACE 43
7.5 CONSUMER ELECTRONICS 43
7.6 TELECOMMUNICATION 44
7.7 MEDICAL 44
8 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY WAFER SIZE 45
8.1 INTRODUCTION 45
8.2 2 INCH 46
8.3 4 INCH 46
8.4 6 INCH 46
8.5 MORE THAN 6 INCH 46
9 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY TYPE 47
9.1 INTRODUCTION 47
9.2 POWER SEMICONDUCTORS 48
9.3 RF SEMICONDUCTORS 48
9.4 OPTO SEMICONDUCTORS 48
10 GLOBAL GAN SEMICONDUCTOR DEVICES MARKET, BY REGION 49
10.1 INTRODUCTION 49
10.2 NORTH AMERICA 50
10.2.1 US 53
10.2.2 CANADA 55
10.2.3 MEXICO 57
10.3 EUROPE 59
10.3.1 GERMANY 62
10.3.2 FRANCE 64
10.3.3 UK 66
10.3.4 ITALY 68
10.3.5 SPAIN 70
10.3.6 REST OF EUROPE 72
10.4 ASIA PACIFIC 74
10.4.1 CHINA 77
10.4.2 INDIA 79
10.4.3 JAPAN 81
10.4.4 SOUTH KOREA 83
10.4.5 REST OF ASIA PACIFIC 85
10.5 ROW 87
10.5.1 LATAM 90
10.5.2 MEA 92
11 COMPETITIVE LANDSCAPE 94
11.1 COMPETITIVE OVERVIEW 94
11.2 COMPETITIVE BENCHMARKING 95
11.3 MARKET SHARE ANALYSIS 96
11.4 KEY DEVELOPMENTS & GROWTH STRATEGIES 96
11.4.1 NEW PRODUCT LAUNCH/SERVICE DEPLOYMENT 96
11.4.2 MERGER & ACQUISITION 97
11.4.3 JOINT VENTURES 97
11.4.4 EXPANSION 98
12 COMPANY PROFILES 99
12.1 KONINKLIJKE PHILIPS N.V. 99
12.1.1 COMPANY OVERVIEW 99
12.1.2 FINANCIAL OVERVIEW 100
12.1.3 PRODUCTS OFFERED 100
12.1.4 SWOT ANALYSIS 101
12.1.5 KEY STRATEGY 101
12.2 QORVO 102
12.2.1 COMPANY OVERVIEW 102
12.2.2 FINANCIAL OVERVIEW 102
12.2.3 PRODUCTS OFFERED 103
12.2.4 SWOT ANALYSIS 103
12.2.5 KEY STRATEGY 104
12.3 EFFICIENT POWER CONVERSION CORPORATION 105
12.3.1 COMPANY OVERVIEW 105
12.3.2 PRODUCTS OFFERED 105
12.3.3 SWOT ANALYSIS 106
12.3.4 KEY STRATEGY 106
12.4 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 107
12.4.1 COMPANY OVERVIEW 107
12.4.2 PRODUCTS OFFERED 107
12.4.3 KEY DEVELOPMENTS 108
12.4.4 SWOT ANALYSIS 108
12.4.5 KEY STRATEGY 108
12.5 INTEL CORPORATION 109
12.5.1 COMPANY OVERVIEW 109
12.5.2 FINANCIAL OVERVIEW 110
12.5.3 PRODUCTS OFFERED 110
12.5.4 SWOT ANALYSIS 111
12.5.5 KEY STRATEGY 111
12.6 GLOBALFOUNDRIES 112
12.6.1 COMPANY OVERVIEW 112
12.6.2 FINANCIAL OVERVIEW 112
12.6.3 PRODUCTS OFFERED 112
12.6.4 KEY DEVELOPMENTS 113
12.6.5 SWOT ANALYSIS 113
12.6.6 KEY STRATEGY 114
12.7 SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP 115
