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Ferroelectric RAM Market Report by Type, Application, End Use, and Region 2024-2032
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The global ferroelectric RAM market size reached US$ 324.1 Million in 2023. Looking forward, IMARC Group expects the market to reach US$ 425.1 Million by 2032, exhibiting a growth rate (CAGR) of 3% during 2024-2032.

A ferroelectric random-access memory (RAM), or FRAM, refers to a RAM that provides faster read-and-write access of dynamic RAM. It consists of a thin ferroelectric film made of lead zirconate titanate (PZT), a bit line and a capacitor connected to a plate. Serial and parallel memory are two of the primarily used FRAM, which are installed in consumer electronics, such as personal digital assistants (PDAs), smartphones and wireless products, smart meters, automobile electronics, smart cards and medical and wearable devices. In comparison to the traditionally used flash drives, FRAM consumes lesser power and offers a higher number of write-erase cycles and faster write performance.

Significant growth in the information technology (IT) industry across the globe represents one of the key factors creating a positive outlook for the market. Furthermore, the widespread adoption of electronic handheld devices is also driving the market growth. Smart meter manufacturers are also adopting FRAM to operate battery-powered wireless sensors to increase the operational life and minimize the overall maintenance costs. This, in turn, is further strengthening the market growth. Additionally, various technological advancements, such as the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices, are acting as other growth-inducing factors. Modern FRAM is being used for applications that require continuous, high-frequency and highly reliable data logging for the test and measurement of factory equipment and non-volatile data capture of industrial processes. Other factors, including increasing industrial automation, along with extensive research and development (R&D) activities, are anticipated to drive the market further.

Key Market Segmentation:

IMARC Group provides an analysis of the key trends in each sub-segment of the global ferroelectric RAM market report, along with forecasts at the global, regional and country level from 2024-2032. Our report has categorized the market based on type, application and end use.

Breakup by Type:

Serial Memory

Parallel Memory

Others

Breakup by Application:

Mass Storage

Embedded Storage

Others

Breakup by End Use:

Security Systems

Energy Meters

Smart Cards

Consumer Electronics

Wearable Electronics

Automotive Electronics

Others

Breakup by Region:

North America

United States

Canada

Asia Pacific

China

Japan

India

South Korea

Australia

Indonesia

Others

Europe

Germany

France

United Kingdom

Italy

Spain

Russia

Others

Latin America

Brazil

Mexico

Others

Middle East and Africa

Competitive Landscape:

The report has also analysed the competitive landscape of the market with some of the key players being Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.

Key Questions Answered in This Report

Table of Contents

1 Preface

2 Scope and Methodology

3 Executive Summary

4 Introduction

5 Global Ferroelectric RAM Market

6 Market Breakup by Type

7 Market Breakup by Application

8 Market Breakup by End Use

9 Market Breakup by Region

10 SWOT Analysis

11 Value Chain Analysis

12 Porters Five Forces Analysis

13 Price Analysis

14 Competitive Landscape

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