¼¼°èÀÇ SOC(Spin on Carbon) ½ÃÀå
Spin on Carbon
»óǰÄÚµå : 1788355
¸®¼­Ä¡»ç : Global Industry Analysts, Inc.
¹ßÇàÀÏ : 2025³â 08¿ù
ÆäÀÌÁö Á¤º¸ : ¿µ¹® 164 Pages
 ¶óÀ̼±½º & °¡°Ý (ºÎ°¡¼¼ º°µµ)
US $ 5,850 £Ü 8,274,000
PDF (Single User License) help
PDF º¸°í¼­¸¦ 1¸í¸¸ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â °¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.
US $ 17,550 £Ü 24,824,000
PDF (Global License to Company and its Fully-owned Subsidiaries) help
PDF º¸°í¼­¸¦ µ¿ÀÏ ±â¾÷ÀÇ ¸ðµç ºÐÀÌ ÀÌ¿ëÇÒ ¼ö ÀÖ´Â ¶óÀ̼±½ºÀÔ´Ï´Ù. Àμâ´Â °¡´ÉÇϸç Àμ⹰ÀÇ ÀÌ¿ë ¹üÀ§´Â PDF ÀÌ¿ë ¹üÀ§¿Í µ¿ÀÏÇÕ´Ï´Ù.


Çѱ۸ñÂ÷

¼¼°èÀÇ SOC(Spin on Carbon) ½ÃÀåÀº 2030³â±îÁö 12¾ï ´Þ·¯¿¡ ´ÞÇÒ Àü¸Á

2024³â¿¡ 2¾ï 7,970¸¸ ´Þ·¯·Î ÃßÁ¤µÇ´Â ¼¼°èÀÇ SOC(Spin on Carbon) ½ÃÀåÀº 2024-2030³âÀÇ ºÐ¼® ±â°£¿¡ CAGR 28.2%·Î ¼ºÀåÇϸç, 2030³â¿¡´Â 12¾ï ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. ÀÌ ¸®Æ÷Æ®¿¡¼­ ºÐ¼®ÇÑ ºÎ¹®ÀÇ ÇϳªÀÎ °í¿Â SOC´Â CAGR 25.3%¸¦ ±â·ÏÇϸç, ºÐ¼® ±â°£ Á¾·á½Ã¿¡´Â 6¾ï 7,780¸¸ ´Þ·¯¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù. »ó¿Â SOC ºÎ¹®ÀÇ ¼ºÀå·üÀº ºÐ¼® ±â°£¿¡ CAGR 32.5%·Î ÃßÁ¤µË´Ï´Ù.

¹Ì±¹ ½ÃÀåÀº 7,350¸¸ ´Þ·¯·Î ÃßÁ¤, Áß±¹Àº CAGR 26.9%·Î ¼ºÀå ¿¹Ãø

¹Ì±¹ÀÇ SOC(Spin on Carbon) ½ÃÀåÀº 2024³â¿¡ 7,350¸¸ ´Þ·¯·Î ÃßÁ¤µË´Ï´Ù. ¼¼°è 2À§ÀÇ °æÁ¦´ë±¹ÀÎ Áß±¹Àº 2030³â±îÁö 1¾ï 8,950¸¸ ´Þ·¯ÀÇ ½ÃÀå ±Ô¸ð¿¡ ´ÞÇÒ °ÍÀ¸·Î ¿¹ÃøµÇ¸ç, ºÐ¼® ±â°£ÀÎ 2024-2030³âÀÇ CAGRÀº 26.9%ÀÔ´Ï´Ù. ±âŸ ÁÖ¸ñÇÒ ¸¸ÇÑ Áö¿ªº° ½ÃÀåÀ¸·Î´Â ÀϺ»°ú ij³ª´Ù°¡ ÀÖÀ¸¸ç, ºÐ¼® ±â°£ Áß CAGRÀº °¢°¢ 25.4%¿Í 24.7%·Î ¿¹ÃøµË´Ï´Ù. À¯·´¿¡¼­´Â µ¶ÀÏÀÌ CAGR ¾à 19.8%·Î ¼ºÀåÇÒ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

¼¼°èÀÇ SOC(Spin on Carbon) ½ÃÀå - ÁÖ¿ä µ¿Çâ°ú ÃËÁø¿äÀÎ Á¤¸®

SOC(Spin on Carbon)ÀÌ ¹ÝµµÃ¼ Á¦Á¶¿¡¼­ Àü·«Àû Á߿伺ÀÌ Ä¿Áö°í ÀÖ´Â ÀÌÀ¯´Â ¹«¾ùÀΰ¡?

ƯÈ÷ ¾÷°è°¡ ¹Ì¼¼È­, °íÁ¾È¾ºñ ¿¡Äª, ¸ÖƼÆÐÅÍ´× °øÁ¤ÀÇ °æ°è¸¦ ³ÐÇô°¨¿¡ µû¶ó SOC´Â ÷´Ü ¹ÝµµÃ¼ Á¦Á¶¿¡ ¾ø¾î¼­´Â ¾È µÉ Àç·á·Î ÀÚ¸® Àâ¾Æ°¡°í ÀÖ½À´Ï´Ù. ÁÖ·Î ¸®¼Ò±×·¡ÇÇ¿¡¼­ ÇÏµå ¸¶½ºÅ© ¶Ç´Â Èñ»ýÃþÀ¸·Î »ç¿ëµÇ´Â SOC(Spin on Carbon)Àº °íÇØ»óµµ µð¹ÙÀ̽º Á¦Á¶¿¡¼­ Á¤È®ÇÑ ÆÐÅÏ Àü»ç ¹× °øÁ¤ Á¦¾î¸¦ °³¼±ÇÒ ¼ö ÀÖ½À´Ï´Ù. Ĩ Á¦Á¶¾÷üµéÀÌ 10nm ÀÌÇÏ ³ëµå·Î ÀüȯÇϰí 3D NAND ¹× FinFET ¾ÆÅ°ÅØÃ³¸¦ äÅÃÇÔ¿¡ µû¶ó SOC¿Í °°ÀÌ ÆòźȭÇϱ⠽±°í ¿­ÀûÀ¸·Î ¾ÈÁ¤ÀûÀÌ¸ç ¿¡Äª¿¡ °­ÇÑ Àç·á¿¡ ´ëÇÑ ¿ä±¸°¡ ºü¸£°Ô Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¿ì¼öÇÑ °¸ ÃæÁø Ư¼ºÀ» °¡Áø ÄÁÆ÷¸Ö ÄÚÆÃÀ» Çü¼ºÇÒ ¼ö ÀÖ´Â ÀÌ ¼ÒÀç´Â ±âÁ¸ÀÇ È­Çбâ»óÁõÂø(CVD) ¹æ½ÄÀ¸·Î´Â ±ÕÀϼº°ú ºñ¿ë ¹®Á¦·Î ¾î·Á¿òÀ» °Þ´Â ´ÙÃþ ¹ÝµµÃ¼ ½ºÅÿ¡ ÇʼöÀûÀÔ´Ï´Ù. AI, ÀÚµ¿Â÷, µ¥ÀÌÅͼ¾ÅÍ, CE(Consumer Electronics) ºÐ¾ß¿¡¼­ °í¹Ðµµ ¸Þ¸ð¸®¿Í °­·ÂÇÑ ·ÎÁ÷ Ĩ¿¡ ´ëÇÑ ¼ö¿ä°¡ ±ÞÁõÇÏ´Â °¡¿îµ¥, SOC´Â ´õ ±î´Ù·Î¿î Çü»ó°ú ´õ ºü¸¥ µð¹ÙÀ̽º ¼º´ÉÀ» Áö¿øÇÏ´Â °øÁ¤¿¡ ÇʼöÀûÀÎ Àç·á·Î ºÎ»óÇϰí ÀÖ½À´Ï´Ù. Á¦Á¶¾÷üµéÀÌ ¼öÀ² Çâ»ó, °áÇÔ °¨¼Ò, ºñ¿ë Àý°¨¿¡ ´ëÇÑ ¾Ð¹Ú¿¡ Á÷¸éÇϰí ÀÖ´Â °¡¿îµ¥, Â÷¼¼´ë ¸®¼Ò±×·¡ÇǸ¦ °¡´ÉÇÏ°Ô ÇÏ´Â SOC(Spin on Carbon)ÀÇ ¿ªÇÒÀº ±× ¾î´À ¶§º¸´Ù Áß¿äÇÑ Àǹ̸¦ °®½À´Ï´Ù.

Àç·á ¹× °øÁ¤ Çõ½ÅÀÌ SOC(Spin on Carbon)ÀÇ ´É·ÂÀ» ¾î¶»°Ô ¹ßÀü½Ã۰í Àִ°¡?

SOC(Spin on Carbon)À» µÑ·¯½Ñ ȯ°æÀº °íºÐÀÚ È­ÇÐ, ÁõÂø ±â¼ú, ÷´Ü ¿¡Äª ¹× Ŭ¸° ÇÁ·Î¼¼½º¿ÍÀÇ ÅëÇÕ¿¡ ´ëÇÑ Çõ½ÅÀ» ÅëÇØ Çü¼ºµÇ°í ÀÖ½À´Ï´Ù. »õ·Î¿î SOC ¹èÇÕÀº ¸ÖƼÆÐÅÍ´× ¹× °íÁ¾È¾ºñ ¿¡Äª¿¡¼­ °ß°íÇÑ Çϵ帶½ºÅ©·Î »ç¿ëÇϱâ À§ÇÑ Áß¿äÇÑ Æ¯¼ºÀÎ ³ôÀº Çʸ§ ¹Ðµµ, Çâ»óµÈ ¿­ ¾ÈÁ¤¼º, ´õ ³ªÀº ¿¡Äª ¼±ÅüºÀ» Á¦°øÇϵµ·Ï ¼³°èµÇ¾ú½À´Ï´Ù. °ø±Þ¾÷ü´Â º¹ÀâÇÑ 3D ±¸Á¶¿¡¼­µµ Ãʹڸ·À¸·Î ±ÕÀÏÇÑ ÄÚÆÃÀ» ½ÇÇöÇÏ´Â ÀúÁ¡µµ SOC ¼ÒÀ縦 °³¹ßÇÏ¿© ÃÖ¼ÒÇÑÀÇ °áÇÔ°ú ¿ì¼öÇÑ Æòźµµ¸¦ µ¿½Ã¿¡ º¸ÀåÇÕ´Ï´Ù. SOC(Spin on Carbon)°ú ½ºÇɿ ±Û·¡½º ¶Ç´Â ½ºÇɿ À¯Àüü ½ºÅÃÀ» °áÇÕÇÑ ÀÌÁßÃþ ½Ã½ºÅÛµµ Àα⸦ ²ø°í ÀÖÀ¸¸ç, ·ÎÁ÷ ¹× ¸Þ¸ð¸® ÀåÄ¡ÀÇ ¼³°è À¯¿¬¼ºÀ» ³ôÀ̰í ÀÖ½À´Ï´Ù. Á¦Çü °³¼±À¸·Î ±âÆÇ°úÀÇ Á¢Âø·ÂÀÌ Çâ»óµÇ¾î ´Ù¾çÇÑ ÇöóÁ ¹× ½À½Ä Ŭ¸° Äɹ̽ºÆ®¸®¿ÍÀÇ È£È¯¼ºÀÌ Çâ»óµÇ¾ú½À´Ï´Ù. °øÁ¤ ¿£Áö´Ï¾î´Â ½ºÇÉ ¼Óµµ, º£ÀÌÅ· Á¶°Ç, ÄÚÆÃ ±ÕÀϼºÀ» º¸´Ù ¾ö°ÝÇÏ°Ô Á¦¾îÇÒ ¼ö Àִ ÷´Ü Æ®·¢ ½Ã½ºÅÛÀ» »ç¿ëÇÏ¿© SOC¸¦ ¸®¼Ò±×·¡ÇÇ Ç÷ο쿡 ÅëÇÕÇϰí ÀÖ½À´Ï´Ù. ±ØÀڿܼ±(EUV) ¸®¼Ò±×·¡ÇÇÀÇ º¸±Þ°ú ÇÔ²² SOC¸¦ Áß°£ ¸¶½ºÅ© ¹× ÆÐÅÏ Àü»çÃþÀ¸·Î »ç¿ëÇÏ´Â ÇÏÀ̺긮µå °øÁ¤ È帧¿¡ ´ëÇÑ ¿ä±¸°¡ °è¼Ó Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ÀÌ·¯ÇÑ ¹ßÀüÀ¸·Î SOC´Â Â÷¼¼´ë ¹ÝµµÃ¼ ³ëµå Áõ°¡ÇÏ´Â ¿ä±¸»çÇ×À» ÃæÁ·ÇÒ ¼ö ÀÖÀ¸¸ç, ¼º´ÉÀÇ È®À强°ú °øÁ¤ ÅëÇÕÀÇ ½ÇÇà °¡´É¼ºÀ» ¸ðµÎ º¸ÀåÇÒ ¼ö ÀÖ½À´Ï´Ù.

½ÃÀå ¼ö¿ä°¡ °¡Àå ºü¸£°Ô ¼ºÀåÇϰí ÀÖ´Â °÷Àº ¾îµðÀ̸ç, ¾î¶² ºÎ¹®ÀÌ ÀüȯÀ» ÁÖµµÇϰí Àִ°¡?

½ºÇÉ¿ÂÄ«º»¿¡ ´ëÇÑ ¼ö¿ä´Â ³ª³ë ½ºÄÉÀÏ µð¹ÙÀ̽º Á¦Á¶ÀÇ ÃÖÀü¼±¿¡ Àִ ÷´Ü ÁÖÁ¶, ÁýÀû µð¹ÙÀ̽º Á¦Á¶¾÷ü(IDM), ¸Þ¸ð¸® °øÀå¿¡¼­ °¡Àå ºü¸£°Ô ¼ºÀåÇϰí ÀÖ½À´Ï´Ù. ´ë¸¸, Çѱ¹, ÀϺ», ÀϺ», ¹Ì±¹ÀÇ ÀÏ·ù ¹ÝµµÃ¼ ±â¾÷Àº 7nm, 5nm, ±×¸®°í ÇöÀç 3nm ÀÌÇÏÀÇ ·ÎÁ÷ Ĩ°ú ¸Þ¸ð¸® Ĩ Á¦Á¶¿¡ SOC¸¦ äÅÃÇÏ´Â µ¥ ¾ÕÀå¼­°í ÀÖ½À´Ï´Ù. ƯÈ÷ 3D ³½µåÇ÷¡½Ã Á¦Á¶¿¡¼­´Â SOCÀÇ È°¿ëÀÌ µÎµå·¯Áö¸ç, 100´Ü ÀÌ»óÀÇ ÀûÃþ¿¡¼­´Â ¼öÀ²À» À¯ÁöÇϱâ À§ÇØ Á¤È®ÇÑ ¼º¸·°ú ÆÐÅÏ Á¦¾î°¡ ¿ä±¸µË´Ï´Ù. DRAM Á¦Á¶¾÷üµéµµ ½ºÆäÀ̼­ ÆÐÅÍ´×°ú ´õºí ÆÐÅÍ´× Ç÷οì·Î SOC¸¦ Ȱ¿ëÇÏ¿© Ä¿ÆÐ½ÃÅÍ¿Í ¼¿ ±¸Á¶¸¦ ¹Ì¼¼È­Çϰí ÀÖ½À´Ï´Ù. ·ÎÁ÷ Ĩ Á¦Á¶¾÷üµéÀº ƯÈ÷ °ÔÀÌÆ® ¿Ã ¾î¶ó¿îµå(GAA)¿Í ³ª³ë ½ÃÆ® ¾ÆÅ°ÅØÃ³°¡ FinFETÀ» ´ëüÇϱ⠽ÃÀÛÇϸ鼭 º¹ÀâÇÑ ÀÎÅÍÄ¿³ØÆ® ÆÐÅÍ´×°ú Á¢Á¡ Ȧ ¼öÃàÀ» À§ÇØ SOC¸¦ »ç¿ëÇϰí ÀÖ½À´Ï´Ù. AI °¡¼Ó±â, ÀÚµ¿Â÷¿ë ÇÁ·Î¼¼¼­, ¿§Áö ÄÄÇ»ÆÃ µð¹ÙÀ̽º, 5G ÀÎÇÁ¶ó µî ¹ÝµµÃ¼¿¡ ´ëÇÑ Àü ¼¼°èÀûÀÎ ¼ö¿ä Áõ°¡·Î SOCÀÇ °íÇØ»óµµ ÆÐÅʹ׿¡ ´ëÇÑ Çʿ伺ÀÌ ´õ¿í Ä¿Áö°í ÀÖ½À´Ï´Ù. ¶ÇÇÑ ´ëÇü ÆÄ¿îµå¸® ¾÷ü·ÎÀÇ ¿þÀÌÆÛ Á¦Á¶ ¾Æ¿ô¼Ò½ÌÀÌ Áõ°¡ÇÔ¿¡ µû¶ó Àü ¼¼°è °í°´À» À§ÇØ SOC ÇÁ·Î¼¼½º¸¦ Ç¥ÁØÈ­Çϰí È®ÀåÇÏ´Â °ÍÀÌ ´õ¿í Áß¿äÇØÁö°í ÀÖ½À´Ï´Ù.

¼¼°è SOC(Spin on Carbon) ½ÃÀåÀÇ Àå±âÀûÀÎ ¼ºÀå µ¿·ÂÀº?

½ºÇÉ¿ÂÄ«º» ½ÃÀåÀÇ ¼ºÀåÀº ¹ÝµµÃ¼ ¼³°èÀÇ ÁøÈ­, Á¦Á¶ °øÁ¤ÀÇ º¹À⼺, µð¹ÙÀ̽ºÀÇ °í¼º´ÉÈ­ ¹× °í¹ÐµµÈ­ÀÇ ²÷ÀÓ¾ø´Â ÃßÁø¿¡ »Ñ¸®¸¦ µÐ ¿©·¯ °¡Áö ¿¬µ¿µÈ Èû¿¡ ÀÇÇØ ÀÌ·ç¾îÁö°í ÀÖ½À´Ï´Ù. ÁÖ¿ä ¿øµ¿·ÂÀº ¾÷°è Àüü°¡ ÷´Ü ³ëµå ¹× 3D ¾ÆÅ°ÅØÃ³·Î ÀüȯÇϸ鼭 ¿øÀÚ ±Ô¸ð¿¡¼­ Áß¿äÇÑ Ä¡¼ö ¹× ÇÁ·ÎÆÄÀÏ Ãæ½Çµµ¸¦ À¯ÁöÇÒ ¼ö ÀÖ´Â º¸´Ù Á¤±³ÇÑ ÆÐÅÍ´× ¼Ö·ç¼ÇÀÌ ¿ä±¸µÇ°í ÀÖ´Ù´Â Á¡ÀÔ´Ï´Ù. ½ºÇÉ¿ÂÄ«º»Àº ¼¿ÇÁ ¾ó¶óÀÎµå ´õºí ÆÐÅÍ´×, Äõµå ·¯Çà ÆÐÅÍ´× µî ºñ¿ë È¿À²ÀûÀ̰í È®Àå °¡´ÉÇÑ ¸ÖƼ ÆÐÅÍ´× ±â¼úÀ» °¡´ÉÇÏ°Ô ÇÏ´Â ¿ªÇÒÀ» Çϸç, ¸®¼Ò±×·¡ÇÇÀÇ Áøº¸¸¦ ½ÇÇöÇÏ´Â Áß¿äÇÑ ±â¼ú·Î ÀÚ¸®¸Å±èÇϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ EUV ¹× °í°³±¸¼ö(High-NA) ¸®¼Ò±×·¡ÇÇ Àåºñ¿¡ ´ëÇÑ Áö¼ÓÀûÀÎ ÅõÀÚ·Î ÀÎÇØ ÁøÈ­ÇÏ´Â °øÁ¤ È帧¿¡ ´ëÀÀÇÒ ¼ö ÀÖ´Â SOC¿Í °°Àº ½Å·Ú¼ºÀÌ ³ô°í ÅëÇÕ¿¡ ÀûÇÕÇÑ ÇÏµå ¸¶½ºÅ© Àç·á¿¡ ´ëÇÑ ¿ä±¸µµ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ ¼öÀ² ÃÖÀûÈ­ ¹× °áÇÔ Á¦¾î¸¦ Áß½ÃÇÏ´Â ¹ÝµµÃ¼ »ê¾÷Àº ¿ì¼öÇÑ °¸ ÇÊ, Ç¥¸é ÆòȰµµ, ¿¡Äª ¼±Åüº ¿ä°Ç°ú ȣȯ¼ºÀ» Á¦°øÇÏ´Â SOC Àç·áÀÇ °¡Ä¡¸¦ ³ôÀ̰í ÀÖ½À´Ï´Ù. ÆÕ¸®½º ±â¾÷ÀÌ Àû±ØÀûÀÎ ±â¼ú Çõ½ÅÀ» Áö¼ÓÇÏ´Â °¡¿îµ¥, È­Çй°Áú °ø±Þ¾÷ü¿Í Àåºñ Á¦Á¶¾÷ü¿¡¼­ ÆÄ¿îµå¸® ¹× OSAT(¹ÝµµÃ¼ Á¶¸³ ¹× Å×½ºÆ® À§Å¹¾÷ü)¿¡ À̸£±â±îÁö °ø±Þ¸Á Àü¹Ý¿¡ °ÉÃÄ °í¼º´ÉÀÇ È®Àå °¡´ÉÇÑ SOC ¼Ö·ç¼Ç¿¡ ´ëÇÑ ¼ö¿ä°¡ Áõ°¡Çϰí ÀÖ½À´Ï´Ù. °øÁ¤ ³ëµåÀÇ ¹Ì¼¼È­, ÀÌÁ¾ ÁýÀûÈ­, Ĩ·¿ ¼³°èÀÇ Áö¼ÓÀûÀÎ ¹ßÀü°ú ÇÔ²² ½ºÇÉ¿ÂÄ«º»Àº ¹ÝµµÃ¼ÀÇ ´ÙÀ½ ´Ü°èÀÇ ºñ¾àÀûÀÎ ¹ßÀüÀ» °¡´ÉÇÏ°Ô ÇÏ´Â Áß¿äÇÑ Àç·á°¡ µÉ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

ºÎ¹®

Àç·á À¯Çü(°í¿Â SOC, »ó¿Â SOC), ¿ëµµ(·ÎÁ÷ µð¹ÙÀ̽º ¿ëµµ, ¸Þ¸ð¸® µð¹ÙÀ̽º ¿ëµµ, ÆÄ¿ö µð¹ÙÀ̽º ¿ëµµ, MEMS ¿ëµµ, ±âŸ ¿ëµµ), ÃÖÁ¾»ç¿ëÀÚ(ÁÖÁ¶ ÃÖÁ¾»ç¿ëÀÚ, IDM ¹× OSAT º¥´õ ÃÖÁ¾»ç¿ëÀÚ)

Á¶»ç ´ë»ó ±â¾÷ÀÇ ¿¹

AI ÅëÇÕ

´ç»ç´Â À¯È¿ÇÑ Àü¹®°¡ ÄÁÅÙÃ÷¿Í AI Åø¿¡ ÀÇÇØ ½ÃÀå Á¤º¸¿Í °æÀï Á¤º¸¸¦ º¯ÇõÇϰí ÀÖ½À´Ï´Ù.

Global Industry Analysts´Â LLM³ª ¾÷°è °íÀ¯ SLM¸¦ Á¶È¸ÇÏ´Â ÀϹÝÀûÀÎ ±Ô¹ü¿¡ µû¸£´Â ´ë½Å¿¡, ºñµð¿À ±â·Ï, ºí·Î±×, °Ë»ö ¿£Áø Á¶»ç, ¹æ´ëÇÑ ¾ç ±â¾÷, Á¦Ç°/¼­ºñ½º, ½ÃÀå µ¥ÀÌÅÍ µî, Àü ¼¼°è Àü¹®°¡·ÎºÎÅÍ ¼öÁýÇÑ ÄÁÅÙÃ÷ ¸®Æ÷ÁöÅ丮¸¦ ±¸ÃàÇß½À´Ï´Ù.

°ü¼¼ ¿µÇâ °è¼ö

Global Industry Analysts´Â º»»ç ¼ÒÀçÁö, Á¦Á¶°ÅÁ¡, ¼öÃâÀÔ(¿ÏÁ¦Ç° ¹× OEM)À» ±âÁØÀ¸·Î ±â¾÷ÀÇ °æÀï·Â º¯È­¸¦ ¿¹ÃøÇß½À´Ï´Ù. ÀÌ·¯ÇÑ º¹ÀâÇÏ°í ´Ù¸éÀûÀÎ ½ÃÀå ¿ªÇÐÀº ¼öÀÔ¿ø°¡(COGS) Áõ°¡, ¼öÀͼº Ç϶ô, °ø±Þ¸Á ÀçÆí µî ¹Ì½ÃÀû, °Å½ÃÀû ½ÃÀå ¿ªÇÐ Áß¿¡¼­µµ ƯÈ÷ °æÀï»çµé¿¡°Ô ¿µÇâÀ» ¹ÌÄ¥ °ÍÀ¸·Î ¿¹ÃøµË´Ï´Ù.

¸ñÂ÷

Á¦1Àå Á¶»ç ¹æ¹ý

Á¦2Àå °³¿ä

Á¦3Àå ½ÃÀå ºÐ¼®

Á¦4Àå °æÀï

KSA
¿µ¹® ¸ñÂ÷

¿µ¹®¸ñÂ÷

Global Spin on Carbon Market to Reach US$1.2 Billion by 2030

The global market for Spin on Carbon estimated at US$279.7 Million in the year 2024, is expected to reach US$1.2 Billion by 2030, growing at a CAGR of 28.2% over the analysis period 2024-2030. Hot Temperature SOC, one of the segments analyzed in the report, is expected to record a 25.3% CAGR and reach US$677.8 Million by the end of the analysis period. Growth in the Normal Temperature SOC segment is estimated at 32.5% CAGR over the analysis period.

The U.S. Market is Estimated at US$73.5 Million While China is Forecast to Grow at 26.9% CAGR

The Spin on Carbon market in the U.S. is estimated at US$73.5 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$189.5 Million by the year 2030 trailing a CAGR of 26.9% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 25.4% and 24.7% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 19.8% CAGR.

Global Spin-on Carbon Market - Key Trends & Drivers Summarized

Why Is Spin-on Carbon Gaining Strategic Significance in Semiconductor Manufacturing?

Spin-on carbon (SOC) is becoming an essential material in advanced semiconductor manufacturing, especially as the industry pushes the boundaries of miniaturization, high-aspect-ratio etching, and multi-patterning processes. Used primarily as a hardmask or sacrificial layer during lithography, spin-on carbon enables precise pattern transfer and improved process control in high-resolution device fabrication. As chipmakers shift to nodes below 10nm and increasingly adopt 3D NAND and FinFET architectures, the need for planarization-friendly, thermally stable, and etch-resistant materials like SOC is growing rapidly. The material’s ability to create conformal coatings with excellent gap-filling properties makes it indispensable in multi-layer semiconductor stacks, where traditional chemical vapor deposition (CVD) methods struggle with uniformity and cost. With the demand for higher-density memory and more powerful logic chips surging across AI, automotive, data center, and consumer electronics applications, SOC is emerging as a process-critical material that supports tighter geometries and faster device performance. As manufacturers face mounting pressure to enhance yield, reduce defectivity, and control costs, spin-on carbon’s role in enabling next-generation lithography is more relevant than ever.

How Are Material and Process Innovations Advancing the Capabilities of Spin-on Carbon?

The spin-on carbon landscape is being shaped by innovations in polymer chemistry, deposition techniques, and integration with advanced etch and clean processes. New SOC formulations are being designed to deliver higher film density, improved thermal stability, and better etch selectivity-key properties for use as robust hardmasks in multi-patterning and high-aspect-ratio etching. Suppliers are developing low-viscosity SOC materials to achieve ultra-thin and uniform coatings, even in complex 3D structures, while ensuring minimal defects and excellent planarization. Dual-layer systems combining spin-on carbon with spin-on glass or spin-on dielectric stacks are also gaining traction, offering greater design flexibility for logic and memory devices. Formulation enhancements are allowing better adhesion to underlying films and compatibility with various plasma and wet clean chemistries. Process engineers are integrating SOC into lithography flows using advanced track systems that provide tighter control over spin speed, baking conditions, and coating uniformity. As extreme ultraviolet (EUV) lithography gains adoption, the need for hybrid process flows using SOC as an intermediate mask or pattern transfer layer continues to rise. These advances are enabling SOC to meet the escalating demands of next-gen semiconductor nodes, ensuring both performance scalability and process integration viability.

Where Is Market Demand Growing Fastest, and Which Segments Are Leading the Transition?

Demand for spin-on carbon is growing most rapidly in advanced foundries, integrated device manufacturers (IDMs), and memory fabs that are pushing the frontiers of nanoscale device production. Tier-one semiconductor companies in Taiwan, South Korea, Japan, and the United States are at the forefront of adopting SOC in the fabrication of logic and memory chips at 7nm, 5nm, and now sub-3nm nodes. SOC use is particularly prominent in the manufacturing of 3D NAND flash, where the stacking of more than 100 layers requires precise deposition and patterning control to maintain yield. DRAM producers are also utilizing SOC in spacer patterning and double-patterning flows to scale capacitor and cell structures. Logic chipmakers are using SOC in complex interconnect patterning and contact hole shrinking, especially as gate-all-around (GAA) and nanosheet architectures begin to replace FinFETs. The rising global demand for semiconductors across AI accelerators, automotive processors, edge computing devices, and 5G infrastructure is further driving the need for high-resolution patterning enabled by SOC. In addition, the growing outsourcing of wafer fabrication to leading foundries has increased the importance of standardizing and scaling SOC processes for global customers.

What’s Driving the Long-term Growth of the Spin-on Carbon Market Globally?

The growth in the spin-on carbon market is driven by several interlinked forces rooted in the evolution of semiconductor design, the complexity of manufacturing processes, and the relentless push toward higher device performance and density. A key driver is the industry-wide transition to advanced nodes and 3D architectures, which demand more sophisticated patterning solutions that can maintain critical dimensions and profile fidelity at atomic scales. Spin-on carbon’s role in enabling cost-effective and scalable multi-patterning techniques-such as self-aligned double or quadruple patterning-is positioning it as a key enabler of lithographic advancement. The ongoing investment in EUV and high-numerical aperture (High-NA) lithography tools is also increasing the need for reliable, integration-friendly hardmask materials like SOC that can support evolving process flows. Furthermore, the semiconductor industry’s growing emphasis on yield optimization and defect control is amplifying the value of SOC materials that offer superior gap-fill, surface smoothness, and compatibility with etch selectivity requirements. As fabless companies continue to innovate aggressively, demand for high-performance, scalable SOC solutions is rising across the supply chain-from chemical suppliers and equipment manufacturers to foundries and OSATs (outsourced semiconductor assembly and test providers). With continued advancements in process node scaling, heterogeneous integration, and chiplet design, spin-on carbon is expected to remain a critical material in enabling the next wave of semiconductor breakthroughs.

SCOPE OF STUDY:

The report analyzes the Spin on Carbon market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Material Type (Hot Temperature SOC, Normal Temperature SOC); Application (Logic Devices Application, Memory Devices Application, Power Devices Application, MEMS Application, Other Applications); End-User (Foundries End-User, IDMs & OSAT Vendors End-User)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 32 Featured) -

AI INTEGRATIONS

We're transforming market and competitive intelligence with validated expert content and AI tools.

Instead of following the general norm of querying LLMs and Industry-specific SLMs, we built repositories of content curated from domain experts worldwide including video transcripts, blogs, search engines research, and massive amounts of enterprise, product/service, and market data.

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by increasing the Cost of Goods Sold (COGS), reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

III. MARKET ANALYSIS

IV. COMPETITION

(ÁÖ)±Û·Î¹úÀÎÆ÷¸ÞÀÌ¼Ç 02-2025-2992 kr-info@giikorea.co.kr
¨Ï Copyright Global Information, Inc. All rights reserved.
PC¹öÀü º¸±â